• 전자공학회논문지A
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• 제33A권4호
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• pp.112-120
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• 1996

With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.

• E2M - 전기 전자와 첨단 소재
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• 제8권6호
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• pp.708-714
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• 1995

We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2010년도 춘계학술대회
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• pp.830-832
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• 2010

본 논문에서는 MicroTec을 이용하여 D-MOS(double-diffusion MOS) 트랜지스터의 접합깊이에 변화를 주어 그에 따른 전류-전압 특성 곡선을 분석하였다. D-MOS는 채널의 길이를 줄이고 높은 항복 전압을 얻기 위해 이중 확산 도핑을 하는 것을 특징으로 하며 연속적으로 확산 공정을 두 번 진행하여 채널 길이를 짧게 하고 이에 의해 고전압과 고전류를 인가할 수 있는 장점을 가진다. 본 연구에서는 D-MOS의 접합깊이에 변화를 주고 이에 따른 전류와 전압의 특성을 비교하여 분석하였다.

• Imaging Science in Dentistry
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• 제42권4호
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• pp.243-247
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• 2012

Purpose: This study was performed to compare the inverted digital images and film-based images of dry pig mandibles to measure the periodontal bone defect depth. Materials and Methods: Forty 2-wall bone defects were made in the proximal region of the premolar in the dry pig mandibles. The digital and conventional radiographs were taken using a Schick sensor and Kodak F-speed intraoral film. Image manipulation (inversion) was performed using Adobe Photoshop 7.0 software. Four trained examiners made all of the radiographic measurements in millimeters a total of three times from the cementoenamel junction to the most apical extension of the bone loss with both types of images: inverted digital and film. The measurements were also made in dry mandibles using a periodontal probe and digital caliper. The Student's t-test was used to compare the depth measurements obtained from the two types of images and direct visual measurement in the dry mandibles. A significance level of 0.05 for a 95% confidence interval was used for each comparison. Results: There was a significant difference between depth measurements in the inverted digital images and direct visual measurements (p>|t|=0.0039), with means of 6.29 mm ($IC_{95%}$:6.04-6.54) and 6.79 mm ($IC_{95%}$:6.45-7.11), respectively. There was a non-significant difference between the film-based radiographs and direct visual measurements (p>|t|=0.4950), with means of 6.64mm($IC_{95%}$:6.40-6.89) and 6.79mm($IC_{95%}$:6.45-7.11), respectively. Conclusion: The periodontal bone defect measurements in the inverted digital images were inferior to film-based radiographs, underestimating the amount of bone loss.

• Journal of Magnetics
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• 제11권1호
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• pp.25-29
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• 2006

Recent experiments have demonstrated high TMR ratios in MTJs with the MgO barrier [1,2]. The CoFeB/MgO/CoFeB junctions showed better properties than the CoFe/MgO/CoFe junctions because the MgO layer had a good crystalline structure with (001) texture and smooth and sharp interface between CoFeB/MgO [3]. The amorphous CoFeB with 20 at%B starts the crystallization at $340^{\circ}C$ [4] and this crystallization of the CoFeB helps obtaining the high TMR ratio. In this work, the compositional changes in the MgO barrier and at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization were studied in annealed MTJs. XPS depth profiles were utilized. TEM analyses showed that the MgO barrier had (100) texture on CoFeB in the junctions. B in the bottom CoFeB layer diffused into the MgO barrier and B-oxide was formed at the interface of CoFeB/MgO/CoFeB after the CoFeB crystallization.

• 전자공학회논문지D
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• 제36D권3호
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• pp.27-33
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• 1999

본 논문에서는 반도체 소자 제조 기술의 발전을 위하여 극 저 에너지 붕소(B),인(P), 및 비소(As) 이온 주입시 발생되는 채널링 현상이 초미세 접합깊이 형성에 미치는 영향에 관한여 개선된 MDRANGE 시뮬레이션 결과를 통하여 보여주고 있다. 본 연구에서 시뮬레이션된 5keV 이하의 에너지에서 조차도 이온 채널링 현상은 불순물의 농도 분포에 중요한 영향을 미치게 되는 것을 알 수 있었다. 붕소의 경우 500eV 이상의 에너지에서, 인의 경우 2 keV 이상의 에너지에서, 그리고 비소의 경우 대략 4 keV 이상의 에너지에서 채널링 현상이 불순물 분포에 크게 영향을 미치는 것으로 예측되었다. 또한 1 keV 붕소, 2 keV 인, 그리고 5keV 비소 이온 주입 에너지에서 경사도 7°인 경우와 경사도 0°인 경우의 2차원적인 농도분포를 통하여 채널링 현상이 측면 방향보다는 깊이 방향으로 대부분 발생되는 것을 볼 수 있었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권3호
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• pp.134-140
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• 2002

Deep submicron NMOSFETs with elevated source/drain can be fabricated using self-aligned selective epitaxial growth(SEG) of silicon for enhanced device characteristics with shallow junction compared to conventional MOSFETs. Shallow junctions, especially with the heartily-doped S/D residing in the elevated layer, give hotter immunity to Yt roll off, drain-induced-barrier-lowering (DIBL), subthreshold swing (SS), punch-through, and hot carrier effects. In this paper, the characteristics of both deep submicron elevated source/drain NMOSFETs and conventional NMOSFETs were investigated by using TSUPREM-4 and MEDICI simulators, and then the results were compared. It was observed from the simulation results that deep submicron elevated S/D NMOSFETs having shallower junction depth resulted in reduced short channel effects, such as DIBL, SS, and hot carrier effects than conventional NMOSFETs. The saturation current, Idsat, of the elevated S/D NMOSFETs was higher than conventional NMOSFETs with identical device dimensions due to smaller sheet resistance in source/drain regions. However, the gate-to-drain capacitance increased in the elevated S/D MOSFETs compared with the conventional NMOSFETs because of increasing overlap area. Therefore, it is concluded that elevated S/D MOSFETs may result in better device characteristics including current drivability than conventional NMOSFETs, but there exists trade-off between device characteristics and fate-to-drain capacitance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.244-244
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• 2010

Doping process of crystalline silicon solar cell process is very important which is as influential on efficiency of solar. Doping process consists of pre -deposition and diffusion. Each of these processes is important in the process temperature and process time. Through these process conditions variable, p-n junction depth can be controled to low and high. In this paper, we studied a optimized doping pre-deposition temperature for high solar cell efficiency. Using a $200{\mu}m$ thickness multi-crystalline silicon wafer, fixed conditions are texture condition, sheet resistance($50\;{\Omega}/sq$), ARC thickness(80nm), metal formation condition and edge isolation condition. The three variable conditions of pre-deposition temperature are $790^{\circ}C$, $805^{\circ}C$ and $820^{\circ}C$. In the $790^{\circ}C$ pre-deposition temperature, we achieved a best solar cell efficiency of 16.2%. Through this experiment result, we find a high efficiency condition in a low pre-deposition temperature than the high pre-deposition temperature. We optimized a pre-deposition temperature for high solar cell efficiency.

• 치과방사선
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• 제28권2호
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• pp.461-470
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• 1998

The comparative detectability of the artificial periapical defects among Ektaspeed Plus film. digitized and digora images was evaluated. The artifical defects were made in the cancellous bone and cancellous-cortical junction with the size of 1.0×0.8mm², 1.4×1.1mm² and 2.8×2.2mm². The defects in cancellous-cortical junction extended into cortical bone with the depth of 0, 0.5 and 1.0 mm. The results were as follows : 1. In junctional defects Ektaspeed Plus film for 2.8×12.2mm² defect showed the highest detectability. But significant difference were only found between Ektaspeed Plus films and digitized images (p<0.05). 2. Almost all defects within cacellous bone were not detected except a few digitized and Digora images for the size of 2.8×2.2mm². Digora images for them showed significant differences with Ektaspeed Plus films and digitized images (p<0.05). 3. The sensitinity of all imaging modalities were 0.9 or 1.0 in junctional defects for the size of 1.4×2.2mm² and 2.8×2.2mm². For cancellous defects, Digora image showed the highest sensitivity of 0.6 for the size of 2.8×2.2mm². 4. Significant differences for change of exposure time were found in most group of Ektaspeed Plus films and digitized images (p<0.05) . But there was no significant differences in Digora images for cacellous defects.

• Journal of Microbiology and Biotechnology
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• 제29권6호
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• pp.863-876
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• 2019

Farm animals such as piglets are often affected by environmental stress, which can disturb the gut ecosystem. Antibiotics were commonly used to prevent diarrhea in weaned piglets, but this was banned by the European Union due to the development of antibiotic resistance. However, the use of probiotics instead of antibiotics may reduce the risk posed by pathogenic microorganisms and reduce the incidence of gastrointestinal diseases. Therefore, this study was conducted to investigate the effects of Lactobacillus casei Zhang on the mechanical barrier and immune function of early-weaned piglets infected using Escherichia coli K88 based on histomorphology and immunology. Fourteen-day-old weaned piglets were divided into a control group and experimental groups that were fed L. casei Zhang and infected with E. coli K88 with or without prefeeding and/or postfeeding of L. casei Zhang. The L. casei Zhang dose used was $10^7CFU/g$ diet. Jejunum segments were obtained before histological, immunohistochemical, and western blot analyses were performed. In addition, the relative mRNA expression of toll receptors and cytokines was measured. Piglets fed L. casei Zhang showed significantly increased jejunum villus height, villus height-crypt depth ratio, muscle thickness, and expression of proliferating cell nuclear antigen and tight junction proteins ZO-1 and occludin. The use of L. casei Zhang effectively reduced intestinal inflammation after infection. We found that L. casei Zhang feeding prevented the jejunum damage induced by E. coli K88, suggesting that it may be a potential alternative to antibiotics for preventing diarrhea in early-weaned piglets.