• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.30.2-30.2
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• 2010

Nano-scale p-n junction can generate various nano-scale functional devices such as nanowire light emitting diode, nanowire solar cell, and nanowire sensor. The core shell type nanowire p-n junction has been considered for the high efficient devices in many previous reports. On the other hand, although device efficiency is relatively lower, the cross bar type p-n junction has simple topological structure, suggested by C.M. Lieber group, to integrate easily many p-n junction devices in one board. In this study, for the integration of the cross bar nanowire p-n junction device, a simple fabrication route, employed dielectrophoretic array and direct printing techniques, was demonstrated by the successful fabrication and programmable integration of the nanowire cross bar p-n junction solar cell. This direct printing process will give the single nanowire solar cell the opportunity of the integration on the circuit board with other nanowire functional devices.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1363-1374
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• 2009

This paper reviews the characteristics and technical trends in Power MOSFET technology that are leading to improvements in power loss for power electronic system. The silicon bipolar power transistor has been displaced by silicon power MOSFET's in low and high voltage system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits. The technology challenges involved in combining power handling capability with finger gate, trench array, super junction structure, and SiC transistor are described, together with examples of solutions for telecommunications, motor control, and switch mode power supplies.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.12-19
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• 1993

Because of their high sensitivity and moderate bandwidth, superconducting receivers with SIS (Superconductor Insulator Superconductor) tunnel junction mixer are now widely used for millimeter wave radio astronomy. In this paper we have introduced how to determine the parameters of SIS tunnel junction which have to be optimized to achieve a good mixer performance. From these results of optimized junction parameters determined by this methods, SIS junctions which consist of a series array of four Nb/Al-AlOx/Nb junctions with each area 3.4${\mu}m^{2}$ have been fabricated by SNEP (Selective Niobium Etching Process) and RIE (Reactive Ion Eching). Also we have tested their DC current-voltage characteristics. These SIS junctions will be used as a mixer for 100GHz band cosmic waves receiver.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1402-1404
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• 2001

Josephson junction arrays of the type $Nb/Al-Al_2O_3/Nb$ were prepared by DC magnetron sputtering. The tunnel barrier was formed by in-situ thermal oxidation. Individual junctions were defined using selective niobium etching process(SNEP). The characteristic curves of Josephson junction arrays fabricated with and without cooling the substrate were represented. The junctions deposited without cooling showed poor characteristics(high leakage current, low gap voltage), and a high quality Josephson junction array of 2,000 junctions with high hysteresis was obtained with cooling and when operated at 74.6 GHz, it generated stable quantized voltage steps up to 2.2 V.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.18-18
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• 2005

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.7
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• pp.1022-1032
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• 1999

The radiation characteristics of a microstrip circularly-polarized aperture-patch $8\times8$ array antenna are investigated at X-band. The radiator consists of a truncated square aperture on the ground plane with an inclined rectangular patch inside, and it is coupled by a microstrip line on the opposite side of the ground. The element spacing of the array was chosen as $0.8\lambda_0$so as to minimize the mutual coupling and maximize the gain. A corporate feed network was employed to distribute the power to each element through four Wilkinson and two T-junction dividers. Measurement results for the $8\times8$ array at 10 GHz showed a directivity of 26.3 dBi, a gain of 22.2 dBi, an axial ratio of 2.97 dB, and a side lobe level of -12.7dB. It was observed that when the array size increases, the directivity increases while the efficiency decreases.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.5
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• pp.559-569
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• 2012

In this paper, the X($1{\times}2$, 10.525 GHz) and K($3{\times}6$, 24.15 GHz) bands patch array antenna having single feed line for radar detector applications is proposed. The left side of the proposed array antenna is X band array antenna and the right is K band array antenna. Two array antennas with two stubs located in the front of antennas are fed through one transmission line. If the array antennas which have the different resonance frequency are fed by one transmission line using general T-junction, it interferes each other and the array antenna lost its character. Therefore, to prevent these interferences, two stubs using open and short property of stub are designed. First of all, the performances of array antenna weren't changed when each array antennas were connected with the stub and in the end, it is found out that it was the same when the two array antennas were combined and feed through the one transmission line. The measured gain at X band is 6.47 dBi and measured gain at K band is 13.07 dBi. The experimental results agree well with the simulated ones.

• Food Science and Biotechnology
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• v.14 no.4
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• pp.554-557
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• 2005

As a device for taste sensation, an 8-channel taste evaluation system was prepared and applied for discriminant analysis of marketed liquor. The biomimetic polymer membranes for the system were prepared through a casting procedure by employing polyvinyl chloride, bis (2-ethylhexyl)sebacate as plasticizer and electroactive materials such as valinomycin in the ratio of 33:66:1, and were separately attached over the sensitive area of ion-selective electrodes to construct the corresponding taste sensor array. The sensor array in conjunction with a double junction reference electrode was connected to a high-input impedance amplifier and the amplified sensor signals were interfaced to a personal computer via an A/D converter. When the signal data from the sensor array for 3 groups of marketed liquor like Maesilju, Soju and beer were analyzed by principal component analysis after normalization, it was observed that the 1st, 2nd and 3rd principal component were responsible for most of the total data variance, and the analyzed liquor samples were discriminated well in 2 dimensional principal component planes composed of the 1st-2nd and the 1st-3rd principal component.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.894-900
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• 2006

This paper reports the fabrication and characterization of $32{\times}32$ thermal cantilever array for nano-scaled memory device applications. The $32{\times}32$ thermal cantilever array with integrated tip heater has been fabricated with micro-electro-mechanical systems(MEMS) technology on silicon on insulator(SOI) wafer using 9 photo masking steps. All of single-level cantilevers(1,024 bits) have a p-n junction diode in order to eliminate any electrical cross-talk between adjacent cantilevers. Nonlinear electrical characteristic of fabricated thermal cantilever shows its own thermal heating mechanism. In addition, n-channel high-voltage MOSFET device is integrated on a wafer for embedding driver circuitry.

• Progress in Superconductivity
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• v.3 no.1
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• pp.1-4
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• 2001

Interface-engineered junctions with $YbBa_2$$Cu_3$$O_{7}$ as the counter electrode were demonstrated. The junctions exhibited excellent Josephson characteristics with a Josephson critical current ($I_{c}$) ranging from 0.1 mA to 8 mA and a magnetic field modulation of the $I_{c}$ exceeding 80% at 4.2 K while maintaining complete c-axis orientation of the counter-electrode layer. The$ 1\sigma$ spreads in $I_{c}$ for junctions with an average $I_{c}$ of 1-2 mA were 5-8% for 16 junctions within a chip, and 9.3% for a 100-junction array. Our dI/dV measurements suggest that a theoretical approach taking into account both a highly transparent barrier and the proximity effect is required to fully understand the Junction characteristics.ristics.