• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
• /
• pp.94-97
• /
• 1989

It is shown that fundamental plasma characteristic, which are sheath voltage and ion concentration, can be derived from measuring RF impedence. Plasma characteristics from this simple method are verified by direct measuring, to be reasonable. Using these values a new relation between isotropy and the ratio of sheath voltage to ion concentration is derived. For etch in which $CF_4$ is used, anisotropic etch can be achieved in its order $10^{-12}Vcm^3$ and isotropic etch in $10^{-12}Vcm^3$. These results are useful in every asymetric diode type etch system.

• 전자공학회논문지A
• /
• 제33A권4호
• /
• pp.112-120
• /
• 1996

With the MOsES (mask oxide sidewall etch scheme)process which uses the conventional i-line stepper and isotropic wet etching, CMOSFET's with fine gate pattern of 0.1.mu.m CMOSFET device, the screening oxide is deposited before the low energy ion implantation for source/drain extensions and two step sidewall scheme is adopted. Through the characterization of 0.1.mu.m CMOSFET device, it is found that the screening oxide deposition sheme has larger capability of suppressing the short channel effects than two step sidewall schem. In cse of 200.angs.-thick screening oxide deposition, both NMOSFET and PMOSFET maintain good subthreshold characteristics down to 0.1.mu.m effective channel lengths, and show affordable drain saturation current reduction and low impact ionization rates.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 G
• /
• pp.3322-3324
• /
• 1999

This paper studies on the design and fabrication of a micro in-plane positioning actuator integrated with a microlens. Proposed in-plane actuator is a micro XY-stage which is composed of two linear comb drive actuators being orthogonal to each other. In the fabrication of actuator, the single crystalline silicon substrate anodically bonded with a #7740 glass substrate is used because of simple release and passivation. The structure of actuator is formed on the silicon facet of bonded fixture by chlorine-based deep RIE and then released by isotropic wet etching of glass (#7740) in hydrofluoric acid solution. Fabricated actuator has a large travel range up to $30({\pm}15){\mu}m$ and high resolution less than 0.01f1l1l in each direction. Experimented resonant frequency of this actuator is 630Hz. The micro-Fresnel lens is fabricated on the square-shape glass structure prepared in the center of actuator.

• 한국정보통신학회논문지
• /
• 제3권3호
• /
• pp.661-669
• /
• 1999

프로브 카드는 IC(integrated circuit) 칩을 테스트할 때, 테스트 시스템의 가장 중요한 부분의 하나이다. 본 연구는 다수의 반도체 칩을 동시에 테스트 할 수 있는 범프(bump)형 수직형 프로브 카드에 관한 것이다. 프로브는 범프 팁을 가지는 실리콘 캔틸레버로 구성되어 있다. 캔틸레버의 최적 크기를 결정하기 위하여 캔틸레버의 크기는 유한요소해석에 의하여 결정되었다. 프로브는 SDB웨이퍼를 사용하여 RIE, 등방성 에칭, 그리고 벌크 마이크로머시닝에 의하여 제조되었다. FEM에 의해 결정된 최적 크기로 제작된 프로브 카드는 범프의 높이가 30$\mum$, 캔틸레버의 두께가 $\mum$, 빔의 폭이 100 $\mum$, 길이가 400 $\mum$, 이었다. 제조된 프로브 카드의 접촉 테스트에서 측정된 접촉 저항은 $2 \Omega$ 미만이고, 2만회의 접촉동안 접촉 저항의 변화가 거의 없는 특성을 보였다. 따라서 20,000회 이상의 수명을 가질 수 있음을 알 수 있었다.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2007년도 춘계학술대회A
• /
• pp.1613-1616
• /
• 2007

A microgripper using thermal actuator and SU-8 polymer was designed and fabricated to manipulate cells and microparts. A chip size of a microgripper was 3 mm ${\times}$ 5 mm. The thermally actuated microgripper consisted of two couples of hot and cold arm actuators. The high thermal expansion coefficient, 52 $ppm/^{\circ}C$, of SU-8 compared to silicon and metals, allows the actuation of the microgripper. Thickness and width of SU-8 as an end-effector were 26 ${\mu}m$ and 80 ${\mu}m$, respectively. Initial gap between left jaw and right jaw was 120 ${\mu}m$. The ANSYS program as FEM tool was introduced to analyze the thermal distribution and displacement induced by thermal actuators. $XeF_2$ gas was used for isotropic silicon dry etching process to release SU-8 end-effector. Mechanical displacements of the fabricated microgripper were measured by optical microscopy in the range of input voltage from 0 V to 2.5 V. The maximum displacement between two jaws of a microgripper Type OG 1_1 was 22.4 ${\mu}m$ at 2.5 V.

• 대한기계학회논문집B
• /
• 제26권12호
• /
• pp.1639-1645
• /
• 2002

Micro engine that includes Micro scale combustor is fabricated. Design target was focused on the observation of combustion driven actuation in MEMS scale. Combustor design parameters are somewhat less than the size recommended by feasibility test. The engine structure is fabricated by isotropic etching of the photosensitive glass wafers. Electrode formed by electroplating of the Nickel. Photosensitive glass can be etched isotropically with almost vertical angle. Bonding and assembly of structured photosensitive glass wafer form the engine. Combustor size was determined to be 1 mm scale. Movable piston is engraved inside the wafer. Ignition was done by nickel spark plug which was electroplated with thickness of 40 ${\mu}{\textrm}{m}$. The wafers were bonded by epoxy that resists high temperature. In firing test due to the bonding method and design tolerance pressure buildup by reaction was not confirmed. But ignition, flame propagation and actuation of micro structure from the reaction was observed. From the result basement of design and fabrication technology was obtained.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.343-346
• /
• 2003

A systematic study of Cu CMP in terms of the effect of slurry chemicals(oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. In acidic media, a corrosion inhibitor, benzotriazole(BTA) and tolytriazol(TTA) was used to control the removal rate and avoid isotropic etching. When complexing agent is added with $H_2O_2$ 2wt% in the slurry, a corrosion rate was presented very good. Most of in, it was appeared that BTA is possible to be replaced by TTA. The tartaric acid was distinguished for the effect among complexing agents. n we apply this results to copper CMP process, it is thought that we will be able to obtain better yield.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2004년도 추계학술대회논문집
• /
• pp.40-43
• /
• 2004

Stamps for microcontact processing are fabricated by casting elastomer such as PDMS on a master with a negative of the desired pattern. After curing, the PDMS stamp is peeled away from the master and exposed to a solution of ink and then dried. Transfer of the ink from the PDMS stamp to the substrate occurs during a brief contact between stamp and substrate. Generally, negative-tone masters, which are used for making positive-tone PDMS stamps, are fabricated by using photolithographic technique. The shortcomings of photolithography are a relative high-cost process and require extensive processing time and heavy capital investment to build and maintain the fabrication facilities. The goal of this study is to fabricate a negative-tone master by using Nano-indenter based patterning technique. Various sizes of V-grooves and U-groove were fabricated by using the combination of nanoscratch and HF isotropic etching technique. An achieved negative-tone structure was used as a master in the PDMS replica molding process to fabricate a positive-tone PDMS stamp.

• Transactions on Electrical and Electronic Materials
• /
• 제4권6호
• /
• pp.28-31
• /
• 2003

Copper CMP in terms of the effect of slurry chemicals (oxidizer, corrosion inhibitor, complexing agent) on the process characteristics has been performed. Corrosion inhibitors, benzotriazole (BTA) and tolytriazol (TTA) were used to control the removal rate and avoid isotropic etching. When complexing agent is added with H$_2$O$_2$ 2 wt% in the slurry, the corrosion rate was presented very well. In the case of complexing agent, it was estimated that the proper concentration is 1 wt%, because the addition of tartaric acid to alumina slurry causes low pH and the slurry dispersion stability become unstable. There was not much change of the removal rate. It was assumed that BTA 0.05 wt% is suitable. Most of all, it was appeared that BTA is possible to be replaced by TTA. TTA was distinguished for the effect among complexing agents.

• 한국자기학회지
• /
• 제11권4호
• /
• pp.163-167
• /
• 2001

DC 마그네트론 스퍼터링법으로 증착된 700 $\AA$의 NiFe 박막을 박막 증착시 형성시킨 자화용이축에 수직한 자기장을 인가하여 열처리한 후 일축 이방성 자기장의 회전을 조사하였다. NiFe 박막은 열처리온도 160 $^{\circ}C$에서 자화용이축과 자화곤란축을 구분할 수 없는 등방적인 상태가 되었고, 열처리온도가 증가함에 따라 다시 일축 이방성을 갖는 상태가 되었다. 열처리 온도가 400 $^{\circ}C$ 이상인 경우에 급격한 보자력의 증가를 보였다. 열처리 온도가 400 $^{\circ}C$인 경우에 XRD 분석과 AES depth profile은 NiFe 박막 내에서 (111) 방향으로 결정성장이 활발히 일어나며 인접한 전극 Au와 상호화산 현상도 광범위하게 일어남을 보여주었다.