• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.4
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• pp.261-266
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• 2010

In this paper, we report the changes of electrical, structural and optical characteristics in $Ge_2Sb_2Te_5$ thin films according to an increase of Si content. The Si-doped $Ge_2Sb_2Te_5$ thin films were prepared by rf-magnetron co-sputtering method. Isothermal annealing was carried out at $N_2$ atmosphere. The crystallization speed (v) of amorphous thin films was evaluated by detecting the reflection response signals using a nano-pulse scanner (wavelength = 658 nm) with illumination power of 1~17 mW and pulse duration of 10~460 ns. Structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of 300~3000 nm using UV-vis-NIR spectrophotometer. The sheet resistance (RS) of the thin films was measured using 4 point probe. Conclusivlely, the v-value decreased with an increase of Si content, while the RS-values of both crystalline and amorphous phases were increased. In particular, fcc-to-hexagonal transition was suppressed by the added Si atoms.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.1
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• pp.3-10
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• 1994

The structure and mechanical properties of the extruded specimens were investigated in rapid solidified Al-(1, 3, 5) Cr alloys after mechanical alloying. Finer lamellar microstructure could no longer be resolved in the bars obtained by extrusion of the spherical particles after 200 min. of processing time. The structure of extruded bars are highly depended on the processing time of splats. The isothermal annealing of the extruded bars showed that all the alloys had good thermal stability up to $400^{\circ}C$ and did not show the recrystallization phenomena. Severe working of Al-(1, 3, 5) Cr splats produced a very fine grain size and substructural strengthening (high dislocation density and fine grain size). Effects of mechanical alloying on the thermal stability of the extruded bars Al-(1, 3, 5) Cr alloys decreases, with increasing Cr content. But the ultimate tensile Strength in the extruded bars increases with increasing Cr content.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.200-205
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• 2003

Thermoelectric p-type $Fe_{0.98}$ $Mn_{ 0.02}$$Si_2$ bulk specimens have been produced by mechanical alloying and consolidation by vacuum hot pressing. The subsequent isothermal annealing was not able to fully transform the mestastable as -milled powders into the $\beta$ $-FeSi_2$ phase, so that the obtained matrix consisted of not only thermoelectric semiconducting $\beta$-FeSi$_2$ but also some residual, untransformed metallic $\alpha$ $- Fe_2$$Si_{ 5}$ and $\varepsilon$-FeSi mixtures. Interestingly, $\beta$ - $FeSi_2$ was more easily obtained in the low density specimen when compared to the high density specimen. The oxidation at 700 and $800^{\circ}C$ in air led to the phase transformation of the above described iron - silicides and the formation of a thin silica surface layer.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.180-186
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• 2011

Isothermal annealing and electromigration tests were performed at $125^{\circ}C$ and $125^{\circ}C$, $3.6{\times}10_4A/cm^2$ conditions, respectively, in order to compare the growth kinetics of the intermetallic compound (IMC) in the Cu/thin Sn/Cu bump. $Cu_6Sn_5$ and $Cu_3Sn$ formed at the Cu/thin Sn/Cu interfaces where most of the Sn phase transformed into the $Cu_6Sn_5$ phase. Only a few regions of Sn were not consumed and trapped between the transformed regions. The limited supply of Sn atoms and the continued proliferation of Cu atoms enhanced the formation of the $Cu_3Sn$ phase at the Cu pillar/$Cu_6Sn_5$ interface. The IMC thickness increased linearly with the square root of annealing time, and increased linearly with the current stressing time, which means that the current stressing accelerated the interfacial reaction. Abrupt changes in the IMC growth velocities at a specific testing time were closely related to the phase transition from $Cu_6Sn_5$ to $Cu_3Sn$ phases after complete consumption of the remaining Sn phase due to the limited amount of the Sn phase in the Cu/thin Sn/Cu bump, which implies that the relative thickness ratios of Cu and Sn significantly affect Cu-Sn IMC growth kinetics.

• Korean Chemical Engineering Research
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• v.50 no.3
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• pp.582-587
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• 2012

In this paper, it was studied on the crystallization characteristics of PLA film by adding ammonium phosphate (APP) as a nucleation agent. Crystallinity and crystallite size of PLA film were determined by Scherrer equation. Crystallization rate constant of PLA film was calculated through Avrami equation. Film samples in the study were prepared by two steps. PLA films were prepared by adding 1, 5, and 10 wt%, respectively, at first and was secondly annealed at 130, 140, and $150^{\circ}C$. Crystallinity of pure PLA film was average 4.6% and those of PLA film with adding 1, 5, and 10 wt% APP were 12.2, 47.7, and 50.0%, respectively. Crystallite size of PLA film was average 28.0 nm and those of PLA film with adding 1, 5, and 10 wt% APP were 26.8, 24.0, and 19.0 nm, respectively. Crystallization rate constants of PLA film with 1 wt% APP were 2.12, 3.86, and 0.27 by annealing at 130, 140, and $150^{\circ}C$, respectively, where was higher than pure PLA film and those with adding 5 and 10 wt% APP, respectively.

• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.12-19
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• 1994

The crystallization behavior of the amorphous $Fe_{73.5}Cu_{1}Nb_{3}Si_{16.5}B_{6}$ alloy with isothermal annealing at $552^{\circ}C$ was studied by $M\"{o}ssbauer$ spectroscopy. The amorphous phase was revealed to coexist together with $Do_{3}-FeSi$ nanocrystalline and Cu-duster in annealed alloys by $M\"{o}ssbauer$ spectrum analysis. At the early stage of crystallization, Si content of FeSi is high due to the creation of Cu-cluster, and decreases with annealing until 60 minutes, which results in the increase in the mean hyperfine field of FeSi, and thereafter keeps constant. After 60 minutes, the decrease in the mean hyperfine field of the residual armrphous, in spite of a slight change in the volume fraction of the FeSi and the residual armrphous, is caused by the increase in the content of Nb and B in residual amorphous phase. Both directions of the hyperfine field, those of the FeSi and the residual amorphous, become randomly oriented in about 60 minutes. For FeSi and Cu-duster, the Avrami exponents are 0.51 and O.65, the activation energies are 2.35 eV and 2.44 eV, and the incubation times are 2.4 minutes and 0.8 minutes respectively. Earlier formation of Cu-duster than that of FeSi is coincidence with the fact that Cu atom promotes the nucleation of the FeSi.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.249-254
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• 1997

We investigated characteristics of Fe-doped semi-insulating InP by means of photoreflectance(PR) measurement. The band gap energy($E_0$) and broadening parameter($\Gamma$) from PR signals at 300K are 1.336 eV and 11.2 meV, respectively. As the temperature is decreased from 300 to 80 K, PR signals are varied from an overlapped shape of exciton and 2-dimensional band gap transitions(300 K) to that of exciton transition(80 K). We calculated Varshni coefficient($\alpha=0.94\pm$0.07 meV/K, $\beta=587\pm$35.2 K) and Bose-Einstein coefficient ($a_B=33.6{\pm}2.02meV$ , $\theta=165\pm$33K). After annealing of isothermal and isochronism crystallinity of InP is found to be excellent when annealed at $300^{\circ}C$ for 10~20 min, qualitatively.

• Applied Chemistry for Engineering
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• v.23 no.2
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• pp.169-175
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• 2012

In the study, the effects of $130{\sim}150^{\circ}C$ annealing condition and 1~10 wt% isopropylphenyl diphenyl phosphate (IPPP) on crystallization behavior and flame retardancy of a full name (PLA) film were determined. The crystallization kinetics of PLA films with adding 1, 5, and 10 wt% IPPP at $140^{\circ}C$ were higher than those at 130 and $150^{\circ}C$. The average crystallinity and crystallite size of PLA film with 1 wt% IPPP were 21.3% and 24.8 nm, respectively. With an increasing IPPP content, the crystallinity of PLA film increased and the crystallite size decreased. The burning rate lowered with an increasing IPPP content as well.