• 한국재료학회지
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• 제24권6호
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• pp.305-309
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• 2014

When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minority-carrier diffusion-length with internal quantum efficiency (IQE) analysis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.54-55
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• 2010

Vacancy defects in graphene can be created by electron or ion irradiation and those induce ripples which can change the electronic properties of graphene. Recently, the formation of defect structures such as vacancy defects and non-hexagonal rings has been reported in the high resolution transmission electron microscope (HR-TEM) of reduced graphene oxide [1]. In those HR-TEM images, it is noticed that the dislocations with pentagon-heptagon (5-7) pairs are formed and diffuses. Interestingly, it is also observed that two 5-7 pairs are separated and diffuse far away from each other. The separation of 5-7 pairs has been known to be due to their self-diffusion. However, from our tight-binding molecular dynamics simulation, it is found that the separation of 5-7 pairs is due to the diffusion of single vacancy defects and coalescence with 5-7 pairs. The diffusion and coalescence of single vacancy defects is too fast to be observed even in HR-TEM. We also implemented Van der Waals interaction in our tight-binding carbon model to describe correctly bi-layer and multi-layer graphene. The compressibility of graphite along c-axis in our tight-binding calculation is found to be in excellent agreement with experiment. We also discuss the difference between single layer and bi-layer graphene about vacancy diffusion and reconstruction.

• Nuclear Engineering and Technology
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• 제52권11호
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• pp.2585-2593
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• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권4호
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• pp.146-149
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• 2001

The functionalized dendrimer containing 48 azobenzene was synthesized. Many isolated featureless domains were explicitly observed even at the air/water interface. Also, these monolayers were representatively observed, showing the change of surface pressure with irradiation time and wavelength. In AFM images, larger domains irregularly shaped structures on the top, while smaller ones were free from such defects. In the optical absorption spectra of the monolayer films by UV irradiation and heat treatment, only the photoiosmerization of the G4-48 Azo monolayers was observed, revealing a decrease of absorbance peaks without any change of the spectral shape. This suggests that the functional group and the symmetric chain affect optical behavior and morphological change.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.182-185
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• 2001

The functionlized dendrimer containing 48 azobenzene was synthesized. Many isolated featureless domains were explicitly observed even at the air-water interface. Also, these monolayers were representatively observed, showing the change of surface pressure with irradiation time and wavelength. In AFM images. the larger domains irregularly shaped structures on the top while the smaller ones were free from such defects. In the optical absorption spectra of the LB films by UV irradiation and heat treatment, only photoisomerization of the G4-48Az monolayers was observed, a decrease of absorbance peak without change of the spectral shape. This suggests that optical behavior and morphological change are affected by the functional group and the symmetric chain.

• E2M - 전기 전자와 첨단 소재
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• 제7권2호
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• pp.94-99
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• 1994

The purpose of this work is to investigate the interface characteristics of hydrogenated amorphous silicon thin films prepared by PECVD and photo-induced CVD and to examine the annealing effects of ultraviolet irradiation on hydrogenated amorphous silicon thin films which were degraded by visible light illumination. The interface layer thickness of films deposited by photo-induced CVD was about 600-900.angs. while that by PECVD was about 1000-1300.angs.. These results can show that the quality of interface layer in photo induced CVD film is better than that in PECVD sample. The electrical properties are improved by ultraviolet irradiation on visible light soaked a-Si:H films using photo-CVD light sources, probably due to the fact that UV generates phonons in a-Si:H films and anneal the meta stable defects.

• 한국자기공명학회논문지
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• 제8권1호
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• pp.37-46
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• 2004

When human tooth enamel is exposed to the X-ray or ${\gamma}$-rays, free radicals and defects are created in a small quantity of carbonate enclosed in the tooth enamel. The intensity of the ESR signal of the free radicals is almost proportional to the absorbed radiation dose. However this dosimetric character is affected to some extent with the measurement temperature and thermal treatment of the samples. We found that the shape of the ESR signals of the samples is dependent upon the measurement temperature, the thermal annealing prior to the irradiation and that after the irradiation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.185-185
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• 2009

The aligned liquid crystals (LCs) display on SiNx thin films using ion-beam (IB) irradiation was studied with controllability ofpretilt angle depending on incident energies of the IB. Plasma-enhanced chemical vapor deposition (PECVD) was used to orient the LCs on SiNx alignment films. The LCs alignment property for the SiNx thin films were observed to verify the practical application potential (figure1). A good LCs alignment of vertical alignment LCs cells on SiNx thin film surfaces irradiated with incident IB energy of 1800eV was achieved. Also, a good LC alignment by the IB irradiation on the SiNx thin film surface was observed at an annealing temperature of $180^{\circ}C$. However, the alignment defects of the nematic liquid crystal was observed at an annealing temperature above $230^{\circ}C$. The atomic force microscopy (AFM) images of LCs on SiNx thin film surfaces irradiated with IB energy was used for the surface analysis.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1416-1418
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• 1998

In this paper, the physical and electrical conduction properties due to the electron beam irradiation for low density polyethylene using insulating materials of the distribution cable and ultra-high voltage cable are studied. In FTIR spectrum for physical properties, the strong absorptions by methyl groups in wavenumbers 720[$cm^{-l}$] and 1463[$cm^{-l}$] are observed, and the effect by residual carbonyl groups (C = 0) is hardly appeared. So, as a result of the electrical conduction properties, it is confirmed that the conduction current is increased nearly to 50[$^{\circ}C$], and is not changed until the crystalline melting point from the temperature over 60[$^{\circ}C$] because of the defects of morphology and the formation of many trap centers by means of electron beam irradiation.

• Rapid Communication in Photoscience
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• 제4권3호
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• pp.54-58
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• 2015

Under the condition of femtosecond impulsive nonlinear optical irradiation, the bright and narrowed blue emission of silicon nanocrystal was observed. This synthetic method produced very small (~ 4 nm) oxide-capped silicon nanocrystal having probably ultra small emitting core (~ 1 nm) inferred from luminescence. By controlling the stirring condition, very high efficiencies of luminescence ( 4 fold higher) were obtained compared with the other conventional femtosecond laser fragmentation methods, which was attributed to the differences in hydration shell structure during the femtosecond laser induced irreversible phase transition reaction. When we properly adjusted the irradiation times of the white light continuum and stirring condition, very homogeneous luminescent silicon nanocrystal bands having relatively sharp lineshape were obtained, which can be attributable to the luminescent core site isolated and free from the surface defects.