• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 2008.04a
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• pp.175-179
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• 2008

This paper studied on the performance variation depending on using period of ionization smoke detector. In korea, there were a lot of loss of lives and property because of fire. In many cases, an alarm equipment didn't operate though it was set up, so it causes the failure of early evacuation and fire suppression. Accordingly, an experiment on the change of ionization smoke detector in capacity performed with ionization smoke detector which is set up with fire objects.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.753-755
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• 1988

In this paper, the effective ionization coefficients (${\alpha}-{\eta}$/Po) are measured by the steady state Townsend method in Townsend discharge domain. The effective ionization coefficients are measured in the range 75${\leqq}$E/Po${\leqq}$150(V/Torr. cm) in $SF_{6}$. The values of the effective ionization coefficients are easily and precisely determined by means of the linearization of current growth equation. The effective ionization coefficients of $SF_{6}$ were agreement with that of Bhalla and Craggs.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.581-588
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• 1997

The ionization energy and degree of ionization for Si and Ge with boron doping are calculated. The hole mobilities are then calculated as a function of doping concentration using the relaxation time approximation. When the screening effect is taken into account, the reduction of ionization energy results in the increase of degree of ionization. As a result, the calculated Si mobility becomes closer to the experimental data, whereas the calculated Ge mobility is almost independent of the screening effect. The inclusion of the broadening effect in the mobility calculation overestimates the ionized impurity scattering. As compared with the experiment, the screening effect is not avoidable to calculate Si and Ge mobilities, and the broadening effect must accompany with the hopping process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.105-106
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• 2005

The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.

• Biotechnology and Bioprocess Engineering:BBE
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• v.10 no.3
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• pp.212-217
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• 2005

Desorption/ionization on silicon mass spectrometry (DIOS-MS) is a relatively new laser desorption/ionization technique for mass spectrometry without employing an organic matrix. This present study was carried to survey the experimental factors to improve the efficiency of DIOS-MS through electrochemical etching condition in structure and morphological properties of the porous silicon. The porous structure of silicon structure and its properties are crucial for the better performance of DIOS-MS and they can be controlled by the suitable selection of electrochemical conditions. The fabrication of porous silicon and ion signals on DIOS-MS were examined as a function of silicon orientation, etching time, etchant, current flux, irradiation, pore size, and pore depth. We have also examined the effect of pre- and post-etching conditions for their effect on DIOS-MS. Finally, we could optimize the electrochemical conditions for the efficient performance of DIOS-MS in the analysis of small molecule such as amino acid, drug and peptides without any unknown noise or fragmentation.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1213-1218
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• 2004

The present article reports extensive numerical results on the non-local characteristics of ultra-short pulsed laser-induced breakdowns of fused silica ($SiO_{2}$) by using the multivariate Fokker-Planck equation. The nonlocal type of multivariate Fokker-Planck equation is modeled on the basis of the Boltzmann transport formalism to describe the ultra-short pulsed laser-induced damage phenomena in the energy-position space, together with avalanche ionization, three-body recombination, and multiphoton ionization. Effects of electron avalanche, recombination, and multiphoton ionization on the electronic transport are examined. From the results, it is observed that the recombination becomes prominent and contributes to reduce substantially the rate of increase in electron number density when the electron density exceeds a certain threshold. With very intense laser irradiation, a strong absorption of laser energy takes place and an initially transparent solid is converted to a metallic state, well known as laser-induced breakdown. It is also found that full ionization is provided at intensities above threshold, all further laser energy is deposited within a thin skin depth.

• KEPCO Journal on Electric Power and Energy
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• v.2 no.4
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• pp.601-608
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• 2016

The electrical characteristics of the soil where a ground electrode is buried vary with regions, seasons and environmental factors. Electrical discharge in the vicinity of the ground electrode will occur differently and significantly affect the performance of the grounding system. It is necessary to analyze discharge and ionization characteristics of soils when the grounding system is designed. The aims of this investigation are to understand correlation between the soil ionization and the transient ground impedance. This paper presents the experimental results on the soil ionization parameters and the transient ground resistance due to the soil ionization around a hemispherical ground electrode stressed by lightning impulse voltages.

• Fire Science and Engineering
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• v.22 no.4
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• pp.61-64
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• 2008

This paper studied on the response characteristics depending on service life of ionization smoke detector. The experimental samples used ionization smoke detectors (360 EA) for over 5 years which were influenced by environment set up with fire objects. The experimental method performed operate and non-operate test according to 'Type Approval and Technical Regulation of Detector (KOFEIS 0301)', for estimate the response characteristics of ionization smoke detector depending on service life. The results showed that their response characteristics were rapidly decreasing when the longer their using period. Accordingly, it is desirable that ionization smoke detector has to be changed for early fire detection when passed their service life.

• Journal of the Korean institute of surface engineering
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• v.24 no.3
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• pp.119-124
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• 1991

Recently, the trend of research in hard coating is concentrate on developing the process of ionization rate under low operating pressure, to get the thin film with high adhesion and dense microstructures. In this study ionization rate enhancement type PVD process using permanent magnet is developed, which enhances the ionization rate by confining the plasma suppressing the wall loss of electron. By the result to investigate the characteristic of glow discharge, the ionization rate of this process is enhanced about twice as high as that of triod BARE process (about 26%), and more dense TiN microstructures are obtained in this process. Cylindrical ion energy analyzer is made and attached in front of a quadrupole mass filter for the analysis of the energy distribution of reactive gas and activated gas ions from the plasma zone. To analyze the operation mechanism of ion energy analyzer, computer simulation is performed by calculation the electric field environment using finite element method. By these analyses of ion energy distribution of outcoming ions from the plasma zone, it is found that magnetic field enhances ion kinetic energy as well as ionization rate. The other results of this study is that the foundation of feed-back system is constructed, which automatically control the partial pressure of reactive gas. In can be possible by recording the data of mass spectrum and ion energy analysis using A-D converter.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.121-128
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• 1996

The impact ionization rate of thethighly-doped AlGaAs/GaAs quantum well structure is calculated, which is an important parameter ot design theinfrared detector APD and the novel neural device. In conjunction with ensemble monte carlo method and quantum mechanical treatment, we analyze the effects of the parameters of quantum well structure on the impact ionization rate. Since the number of the occupied subbands increases while the energy of the subbands decreases as the width of quantum well increases, the impact ionization rate increases in the range of th esmall well width but gradually the increament slows down and is finally saturated. Due to the effect of the energy of the injected electrons into the quantum well and the tunneling through the barrier, the impact ionization rate increases for the range of the small barrier width and decreases for the range of the large barrier width. Thus, there exists a barrier width to maximize the impact ionzation rate for a mole fraction x, and the barrier width moves to the larger vaue as the mole fraction x increases. The impact ionization rate is much more sensitive to the variation of the doping density than that of the other quantum well parameters. We found that there is a limit of the doping density to confine the electronics in the quantum well effectively.