• Title/Summary/Keyword: ionization

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Impact Ionization Characteristics Near the Drain of Silicon MOSFET's at 77 and 300 K Using Monte Carlo Method (몬데 칼로 방법을 이용한 실리콘 MOSFET의 드레인영역에서 77 K와 300 K의 Impact Ionization 특성)

  • Rhee, Jun-Koo;Park, Young-June;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 1989.11a
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    • pp.131-135
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    • 1989
  • Hot electron simulation of silicon using Monte Carlo method was carried out to investigate impact ionization characteristics near the drain of MOSFET's at 77 and 300K. We successfully characterized drift velocity and impact ionization at 77 and 300K employing a simplified energy band structure and phonon scattering mechanisms. Woods' soft energy threshold model was introduced to the Monte Carlo simulation of impact ionization, and good agreement with reported experimental results was resulted by employing threshold energy of 1.7 eV. It is suggested that the choice of the critical angle between specular reflection and diffusive scattering of surface roughness scattering may be important in determining the impact ionization charateristics of Monte Carlo simulation near the drain of MOSFET's.

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Impact ionization for GaAs using full band monte carlo simulation (Full 밴드 몬테칼로 시뮬레이션을 이용한 GaAs 임팩트이온화에 관한 연구)

  • 정학기
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.11
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    • pp.112-119
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    • 1996
  • Impact ionization model in GaAs has been presented by modified keldysh formula with two sets of power exponent of 7.8 and 5.6 in study. Impact ionization rate is derived from fermil's golden rule and ful lenergy band stucture based on empirical pseudopotential method. Impact ionization rates show anisotropic property in low energy region (<3eV), but isotropic in high energy region (3>eV). Full band monte calo simulator is coded for investigating the validity of the GaAs impact ionization model, and validity is checked by comparing impact ionization coefficients with experimental values and ones in anisotropic model. Valley transitions to energy alteration are explained by investigating electron motion in brillouin zone for full band model to electric field variation.

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Ionization Phenomena caused by Impulse Voltages in various soils (토양종류에 따른 임펄스전압에 의한 이온화 현상)

  • Park, Geon-Hun;Kim, Hoe-Gu;Kim, Jung-Cheol;Kim, Ki-Bok;Lee, Bok-Hee
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1301-1302
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    • 2008
  • The resistivity of soils around ground electrodes is changed considerably according to the factors such as soil types, water contents, grain size, temperature and pressure. In this study, ionization characteristics of different soil types containing the same amount of water content due to the impulse voltages are investigated. In order to analyze soil ionization phenomena, critical electric field intensity for ionization and pre-ionization and post-ionization resistances are measured and discussed.

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Measurement of the Ionization Coefficient in Gases by the Luminous-flux Method (광속법을 이용한 기체의 전이계수 측정)

  • 백용현;하성철;이복희;김희택;김정섭
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.34 no.7
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    • pp.289-296
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    • 1985
  • The Townsend primary ionization coefficient a was measured by the luminous-flux method using the fact that the intensity of radiant light is proportional to electron density in the townsend discharge domain. The ranges of measurements were 15for He gas and 10

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Characteristics of Impulse Discharges in Wet Soil (습한 토양의 임펄스방전특성)

  • Kim, Hoe-Gu;Lee, Bok-Hee
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.2
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    • pp.363-369
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    • 2017
  • This paper presents the experimental results related to soil ionization and electrical breakdown in a concentric hemispherical electrode system under lightning impulse voltages. Dynamic voltage-current and impedance-time characteristics of soil ionization were measured and analyzed. Also the electrical breakdowns of the soil gap were investigated. The time-lag to the peak current corresponds to the soil ionization propagation. The time of ionization propagation in wet sand is found to decrease with increasing the impulse currents. A drastic decrease in ground resistance was observed during the impulse current spreading in sand. The electrical breakdown appears at the wave tail of impulse voltage and results in a wide scatter in V-t curves. The voltage-current curves have a fan-like shape attributed to ionization processes which result in increasing current and decreasing voltage.

The anisotropic of threshold energy of impact ionization for energy band structure on GaAs (GaAs 에너지밴드구조에 따른 임팩트이온화의 문턱에너지 이방성)

  • 정학기;고석웅;이종인
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 1999.05a
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    • pp.389-393
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    • 1999
  • The exact model of impact ionization events in which has influence on device efficiency, is to be necessary element for device simulation. Recently, a modified Keldysh formula with two set of power exponent of 7.8 and 5.6 is used to simulate carrier transport. This model is, however, not suitable as impact ionization model in low energy range since this ignore direction dependent properties of impact ionization. The impact ionization rate is highly anisotropic at low energy, while it becomes isotropic at higher energy range. Note that impact ionization events frequently occur in high energy range. For calculating impart ionization rate, we use full energy band structure derived from Fermi's golden rule and empirical pseudopotential method. We compare with calculated and experimental value, and investigate direction dependent conduction energy band structure along the direction of <100>, <110> and <111>. We know that the threshold energy of impact ionization is anisotropic and impact ionization rate is very deviated from modified Keldish formula, in relatively low energy range.

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The Temperature- and Field-dependent Impact ionization Coefficient for Silicon using Monte Carlo Simulation (Monte Carlo 시뮬레이션을 이용한 Si 임팩트이온화계수의 온도 및 전계 특성)

  • 유창관;고석웅;김재홍;정학기;이종인
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2000.05a
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    • pp.451-454
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    • 2000
  • The impact ionization(I.I.) is necessary to analyze carrier transport properties under the influence of high electric field. The full band I-k relation and Fermi's golden rule are used for the calculation of impact ionization rate. We have investigated the temperature- and field-dependent impact ionization coefficient for silicon using full band Monte Carlo simulation. The impact ionization coefficients calculated by our impact ionization model are agreed with experimental data at look. We know that impact ionization coefficients and electron energies are decreasing along increasing temperature due to increase of phonon scattering, especially by emission. The logarithm of impact ionization coefficients are fitted to linear function for temperature and field. The residuals of linear function are within the error bound of 5%. We know logarithmic impact ionization coefficients are linearly dependent on temperature and field.

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Determination of Trace Lead by Laser Resonance Ionization Spectroscopy (I). Dependence of Detection Limit on Ionization Schemes (레이저 공명이온화에 의한 극미량 납의 정량 (I). 이온화 경로에 따른 검출한계의 변화)

  • Kyuseok Song;Jong Hun Lee;Jongmin Lee
    • Journal of the Korean Chemical Society
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    • v.36 no.6
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    • pp.832-839
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    • 1992
  • Lead has been determined by Resonance Ionization Mass Spectrometry (RIMS) through one-color-two-photon ionization, two-color-two-photon ionization and three-color-three-photon ionization in a vacuum chamber equipped with Time-of-Flight(TOF) mass spectrometer. In all cases, the first excited state chosen was 6p7s($^3P_1$) state and the transition was at 283.3 nm in wavelength from the ground state. By using various concentrations of lead standard solutions, the calibration curve is obtained in the range of 0.1 ${\mu}g$ to 1.0 pg in both ionization schemes. The detection limit was estimated as 20 pg for the two-color ionization, while 10 pg for the three-color ionization experiment.

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A Study on Response Characteristics of ionization Smoke Detector Influenced by Air Stream (이온화식 연기감지기의 기류응답특성 연구)

  • 이복영;정길순;이병곤
    • Fire Science and Engineering
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    • v.17 no.2
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    • pp.6-9
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    • 2003
  • Recently, forced ventilating air conditioning system has been widely used in modern buildings. However, It is obvious that this kind of system may affect on the response of fire detectors at real fire incidents, especially, on the ionization smoke detector, which is critically influenced by air stream. Therefore we studied to verify the response characteristics of air stream by ionization smoke detector for the design of facilities in practice. In this study, experiments were executed to examine the correlation between air velocity and the ionization detector's responses with var-ious air velocity and smoke densities in the simulated test room. As a result of experiments, ionization detector's operating time is in reverse proportion to air velocity. And the detector shows more sensitive reaction when the velocity of smoke stream increase over 60 cm/s. In addition, it was shown that ionization smoke detector is more sensitive to smoldering fires in paper than that in petro-chemicals.

A LONG-TERM FIELD TEST OF A LARGE VOLUME IONIZATION CHAMBER BASED AREA RADIATION MONITORING SYSTEM DEVELOPED AT KAERI

  • Kim, Han-Soo;Ha, Jang-Ho;Park, Se-Hwan;Kim, Jung-Bok;Kim, Young-Kyun;Jin, Hyung-Ho
    • Journal of Radiation Protection and Research
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    • v.34 no.2
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    • pp.77-81
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    • 2009
  • An Area Radiation Monitoring System (ARMS) ionization chamber, which had an 11.8 L active volume, was fabricated and performance-tested at KAERI. Low leakage currents, linearities at low and high dose rates were achieved from performance tests. The correlation coefficients between the ionization currents and the dose rates are 1 at high dose rate and 0.99 at low dose rate. In this study, an integration-type ARMS ionization chamber was tested over a year for an evaluation of its long-term stability at a radioisotope (RI) repository of the Young-gwang nuclear power plant. The standard deviation of dose rate of 1 day data and over a 100-days mean value were 6.2 $\mu$R/h and 2.9 $\mu$R/h, respectively. The fabricated ARMS ionization chamber showed stable performance from the results of the long-term tests. Design and performance characteristics of the fabricated ionization chamber for the ARMS from performance-tests are also addressed.