• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1103-1107
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• 2005

Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.11-11
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• 2014

CVD 로 성장된 그래핀 표면위에 transfer 와 lithography 공정에서 잔류하게 되는 PMMA residue 는 mobility 의 감소와 high-k dielectrics 의 증착을 방해하는 결정적인 요인이다. 우리는 최적화 되어진 Ar ion beam 을 통해 PMMA residue 를 damage 없이 효과적으로 제거하였고, 손쉽게 high-k dielectrics 를 uniform 하게 증착할 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.713-715
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• 2009

Preferred orientation of MgO protection layer is controlled via adjusting diffusion of adatom between (111) plane with highest neighbor atoms and (200) plane with lowest neighbor atoms. The diffusion of adatom could be modulated by the factors such as substrate temperature, deposition rate, and extra energy applied on adatom like ion beam energy.

• Membrane Journal
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• v.14 no.4
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• pp.263-274
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• 2004

The polymeric membrane, a component of battery devices such as Li-ion battery (LIB) and Li-polymer battery (LPB), is a typical material in which the carrier mobility dominates the battery performance. In this paper, the state-of-the-art of membranes for secondary battery is described in terms of membrane properties. Several prerequisites, which are related to stability of battery devices, are discussed to design and prepare suitable polymeric membranes. In addition, physical requirements of membranes and their measurement methods are described to develop applicable polymeric membranes in membrane preparation processes.

• Journal of Electrochemical Science and Technology
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• v.8 no.3
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• pp.257-264
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• 2017

A polymeric ionic liquid, poly(1-methyl 3-(2-acryloyloxypropyl) imidazolium iodide) (PMAPII), was synthesized as a single-iodide-ion-conducting polymer and employed in a gel polymer electrolyte. Gel polymer electrolytes prepared from iodine, 4-tert-butylpyridine, ${\gamma}$-butyrolactone, and PMAPII were applied in quasi-solid-state dye-sensitized solar cells (DSSCs). The addition of 16 wt.% PMAPII provided the most favorable environment, striking a compromise between the iodide ion concentration and the ionic mobility, which resulted in the highest conversion efficiency of the resulting DSSCs. The quasi-solid-state DSSC assembled with the optimized gel polymer electrolyte exhibited a relatively high conversion efficiency of 7.67% under AM 1.5 illumination at $100mA\;cm^{-2}$ and better stability than that of the DSSC with a liquid electrolyte.

• Membrane Journal
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• v.16 no.1
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• pp.77-84
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• 2006

Transport mechanisms of nickel ion through a continuous electrodeionization (CEDI) were investigated in terms of electric properties of ion exchange textile (IET). The porous plug model and extended Nernst-Plank (N-P) equation were applied for the description of transport mechanism of nickel ion. The model revealed that the CEDI performance was mainly due to the induced current not accelerated mobility by IET. This study also suggested that optimal operating conditions are attained with minimized electroregeneration region.

• Journal of Electrochemical Science and Technology
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• v.12 no.1
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• pp.1-20
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• 2021

In-depth knowledge of electrode processes is crucial for determining the electrochemical performance of lithium-ion batteries (LIBs). In particular, the conduction mechanisms of charged species in the electrodes, such as lithium ions (Li+) and electrons, are directly correlated with the performance of the battery because the overall reaction is dependent on the charge transport behavior in the electrodes. Therefore, it is necessary to understand the different electrochemical processes occurring in electrodes in order to elucidate the charge conduction phenomenon. Thus, it is essential to conduct fundamental studies on electrochemical processes to resolve the technical challenges and issues arising during the ionic and electronic conduction. Furthermore, it is also necessary to understand the transport of charged species as well as the predominant factors affecting their transport in electrodes. Based on such in-depth studies, potential approaches can be introduced to enhance the mobility of charged entities, thereby achieving superior battery performances. A clear understanding of the conduction mechanism inside electrodes can help overcome challenges associated with the rapid movement of charged species and provide a practical guideline for the development of advanced materials suitable for high-performance LIBs.

• ALGAE
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• v.39 no.3
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• pp.187-205
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• 2024

Chlorella species of microalgae are utilized in the crop and food industries. The aim of this research was to investigate the metabolite profiles of Chlorella fusca for the first time and evaluate its biological properties. The two ion modes of UPLC-Q-TOF-MS/MS were used to identify a total of 62 components in the methanol extract of C. fusca, with 26 in the negative and 36 in the positive ion mode, including 10 identical ingredients. Fatty acids (negative mode) and combinations of chlorophyll and fatty acids (positive mode) were the most prevalent chemical structures, constituting over 80 and 70% of the total metabolites, respectively, followed by chlorophyll, polar lipids, carotenoids, and fatty alcohols. Moreover, this extract exhibited potent antioxidant and anti-aging benefits in decreasing order of potency at a concentration of 200 ㎍ mL^-1: tyrosinase inhibition (100%), ABTS radical scavenging (90%), elastase inhibition (88%), and DPPH radical scavenging (34%). Notably, this extract protected the mobility of DNA fragments up to 5 ㎍ mL^-1 (26%), with potential effects (> 60% at 200 ㎍ mL^-1). These findings suggest that C. fusca may be a promising candidate for applications related to its biological functions, owing to the high accumulation of fatty acids and chlorophyll derivatives.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.558-565
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• 2020

AZO thin films are grown on a p-Si(111) substrate by RF magnetron sputtering. The characteristics of various thicknesses and heat treatment conditions are investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall effect and room-temperature photoluminescence (PL) measurements. The substrate temperature and the RF power during growth are kept constant at 400 ℃ and 200 W, respectively. AZO films are grown with a preferred orientation along the c-axis. As the thickness and the heat treatment temperature increases, the length of the c-axis decreases as Al³⁺ ions of relatively small ion radius are substituted for Zn²⁺ ions. At room temperature, the PL spectrum is separated into an NBE emission peak around 3.2 eV and a violet regions peak around 2.95 eV with increasing thickness, and the PL emission peak of 300 nm is red-shifted with increasing annealing temperature. In the XPS measurement, the peak intensity of Al_2p and O_ll increases with increasing annealing temperature. The AZO thin film of 100 nm thickness shows values of 6.5 × 10¹⁹ cm^-3 of carrier concentration, 8.4 cm^-2/V·s of mobility and 1.2 × 10^-2 Ω·cm electrical resistivity. As the thickness of the thin film increases, the carrier concentration and the mobility increase, resulting in the decrease of resistivity. With the carrier concentration, mobility decreases when the heat treatment temperature increases more than 500 ℃.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.89-95
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• 1995

The structure of boron ion-implanted pn junctio in the vacancy-doped p-type HgCdTe was investigated with the differential Hall measurement. The as-implanted junction showed the electron concentration as high as 1${\times}10^{18}/cm^{3}$ and the junction depth of 0.6.mu.m. When the HgCdTe junction was heated in oven, the electron concentration near the junction decreased and the junction depth increased as the annealing temperature and time increased. The junction structure after the thermal annealing was n$^{+}$/n$^{-}$/p. For the 200.deg. C 20min annealed sample, the electron mobility was 10$^{4}cm^{2}/V{\cdot}$s near the surface(n$^{+}$), and was larger thatn 10$^{5}cm^{2}/V{\cdot}$s near the junction(n$^{+}$). The junction formation mechanism is conjectured as follows. When HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms near the surface. The displaced Hg vacancies diffuse in easily by the thernal treatment and a fill the Hg vacancies in the p-HgCdTe substrate. With the Hg vacancies filled completely, the GfCdTe substrate becomes n-type because of the residual n-type impurity which was added during the wafer growing. Therefore, the n$^{+}$/n$^{-}$/p regions are formed by crystal defects, residual impurities, and Hg vacancies, respectively.