• Transactions on Electrical and Electronic Materials
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• v.9 no.3
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• pp.120-122
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• 2008

We have studied the tilt angle generation on the homeotropic polyimide (PI) surface using a low intensity ion beam source as a function of incident angle. An excellent LC alignment of nematic liquid crystal (NLC) on the PI surface with ion beam exposure for all incident angles was observed. The tilt angle of NLC on the homeotropic PI surface for all incident angles was from 90 to 88 degree was observed. Also the tilt angle of NLC on the homeotropic PI surface with ion beam exposure of 400 eV had a tendency to increase as ion beam energy incident angle become more instance from 45 degree. Finally, a good LC alignment thermal stability on the homeotropic PI surface with ion beam exposure can be achieved.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2005.05a
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• pp.30-34
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• 2005

This paper describes the design and manufacturing of a focused-ion-beam machining system which can make small features of nano size. We use a SIMION simulator in order to obtain the design data of an ion column. The simulation result shows that the focal length of ion beam decreases as the applied voltage of object lens increases. Finally, we obtained the good images of a mesh of 50 micrometers by using the adjustment of applied voltage, acceleration power, and dimension of each elements.

• Journal of Dental Rehabilitation and Applied Science
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• v.25 no.1
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• pp.41-52
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• 2009

The surface treatment of titanium implant could bring out the biochemical bonding between bone and implant. The purpose of this study was to evaluate the biomechanical bone response of Mg-ion implanted implants with plasma source ion implantation method. Twelve New Zealand white rabbits were included in this study. Each rabbit received one control fixture (blasted with resorbable blasting media, RBM) and three types of Mg ion implanted fixtures in tibiae. The implants were left in place for 6 weeks before the rabbits were sacrificed. Removal torque value and resonance frequency analysis (ISQ) were compared. The repeated measured analysis of variance was used with $P{\leq}0.05$ as level of statistical significance. ISQ was not different among all groups. However, the ISQ was increased after 6 weeks healing. The group had lowest ISQ value showed the greatest increment. Mg-1 implants with 9.4% retained ion dose showed significantly higher removal torque value than that of the other implants. From this results, it is concluded that the Mg-1 implants has stronger bone response than control RBM surface implant.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.180-180
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• 2000

Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.396-402
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• 2001

MgO thin films with 1000 $\AA$ thickness were deposited on Cu substrates by using an electron gun evaporator at room temperature. A 1000 $\AA$ thick Al layer was deposited on the MgO for removing the charging effect of the MgO thin film during the measurements of the sputtering yields. A Ga ion liquid metal was used as the focused ion beam(FIB) source. The ion beam was focused by using double einzel lenses, and a deflector was employed to scan the ion beams into the MgO layer. Both currents of the secondary particle and the probe ion beam were measured, and they dramatically changed with varying the applied acceleration voltage of the source. The sputtering yield of the MgO layer was determined using the values of the analyzed probe current, the secondary particle current, and the net current. When the acceleration voltage of the FIB system was 15 kV, the sputtering yield of the MgO thin film was 0.30. The sputtering yield of the MgO thin film linearly increases with the acceleration voltage. These results indicate that the FIB system is promising for the measurements of the sputtering yield of the MgO thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1133-1138
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• 2005

In this study, we have prepared, as the pluse power source, a commercially supplied Li-ion battery with a capacity of 700 mAh and AC resistivity of 60 md at 1 kHz and nonaqeous asymmetric hybrid capacitor composed of an activated carbon cathode and MCMB anode, and have examined the electrochemical characteristics of hybrid capacitor and the pulse performances of parallel connected hybrid capacitor/Li-ion battery source. The nonaqueous asymmetric hybrid capacitors constituted with each stack number of pairs composed of the cathode, the porous separator and the anode electrode were housed in Al-laminated film cell. The 10 stacked hybrid capacitor, which was charged and discharged at a constant current at 0.25 $mA/cm^2$ between 3 and 4.3 V, has exhibited the capacitance of 108F and the lowest equivalent series resistance was 32 $m{\Omega}$ at 1 kHz. On the other hand, the enhanced run time of Li-ion battery assisted by the hybrid capacitor was obtained with increasing of current density and pulse width in Pulse mode. The best improvement, $84\;\%$ for hybrid capacitor/Li-ion battery was obtained in the condition of a 7C-rate pulse (100 msec)/0.5C-rate standby/$10\;\%$ duty cycle.

• Proceedings of the Korean Nuclear Society Conference
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• 2001.05a
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• pp.518.2-518
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.196-196
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.20-20
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• 1997

• Journal of the Korean Society for Heat Treatment
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• v.13 no.2
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• pp.132-137
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• 2000