• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.109-112
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• 2007

In this paper we describe a robust method of improving precision in monitoring high energy ion implantation processes. Ion implant energy accuracy was measured in the device manufacturing process using an unpatterned implanted layer on an intrinsic p-type silicon wafer. To increase Rs sensitivity to energy at the well implant process, a PN junction structure was formed by P-well and deep N-well implants into the p-type Si wafer. It was observed that the depletion layer formed by the PN junction was very sensitive to energy variation of the well implant. Conclusively, it can be recommended to monitor well implant processes using the Rs measurement method described herein, i.e., a PN junction diode structure since it shows excellent Rs sensitivity to variation caused by energy difference at the well implant step.

• Journal of the Korean Society of Safety
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• v.4 no.1
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• pp.71-74
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• 1989

The $\alpha$-Fe$_2$O$_3$ gas sensor, prepared by the precipitation of Fe(OH)$_3$ from a solution of iron(III) sulfate and tin (IV) chloride, was composed of fine particles and was superior in sensitivity to other $\alpha$-Fe$_2$O$_3$. The gas sensitivity was found to depend on the amounts of remaining sulfate ion the microstructure and a small amount of iron(II) species generated through the reduction of $\alpha$-Fe$_2$O$_3$. The sensing mechanism of $\alpha$-Fe$_2$O$_3$gas sensor was confirmed to be due to the reduction of $\alpha$-Fe$_2$O$_3$ to the low resistive Fe$_3$-xO$_4$ by combustible gas and to depend on the crystral structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.846-850
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• 2003

Thin film $SnO_2$ Gas Sensor was fabricated by using ion beam sputtering and ultra thin film Pt catalyst of $45{\AA}$ was deposited on $SnO_2$ thin film. The effects of annealing temperature on the structural properies of $SnO_2$ were investigated using the X-ray diffraction. Using SEM, microstructures of thin film were investigated. The good gas sensitivity is shown when annealing condition is $650^{\circ}C$, 5hr and ultra thin film Pt catalyst thickness is $45{\AA}$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.7
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• pp.293-297
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• 2003

Silicon dioxide (SiO$_2$) layers were fabricated on Si$_3$N$_4$/SiO$_2$/Si layer structures by low pressure chemical vapor deposition (LPCVD). Potassium and aluminum were then coimplanted by implanting potassium ions with the energy of 100 ［keY］ and dose of 5x10$^{16}$ [cm￣$^2$］ and 1x10$^{17}$ [cm￣$^2$］ into an aluminum buffer layer on the SiO$_2$Si$_3$N4/SiO$_2$/Si structure. The pH, pNa, and pK ion sensitivities of the resulting layers were investigated and compared to those of as-deposited silicon dioxide layer. The pK-sensitivity of the silicon dioxide was enhanced by the K and Al coimplantation. On the contrary, the pH and pNa-sensitivities of the coimplanted silicon dioxides were quite lower than that of the as-deposited silicon dioxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.243-244
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• 2013

Over the past 15 years, several groups have incorporated radio-frequency quadrupole (RFQ) based instruments before the accelerator in accelerator mass spectrometry (AMS) systems for ion-gas interactions at low kinetic energy (＜40 eV). Most AMS systems arebased on a tandem accelerator, which requires negative ions at injection. Typically, AMS sensitivity abundance ratios for radioactive-to-stable isotope are limited to Xr/Xs ＞10^-15, and the range of isotopes that can be analyzed is limited because of theneed to produce rather large negative ion beams and the presence of atomic isobaric interferences after stripping. The potential of using low-kinetic energy ion-gas interactions for isobar suppression before the accelerator has been demonstrated for several negative ion isobar systems with a prototype RFQ system incorporated into the AMS system at IsoTrace Laboratory, Canada (Ontario, Toronto). Requisite for any such RFQ system applied to very rare isotope analysis is large transmission of the analyte ion. This requires proper phase-space matching between the RFQ acceptance and the ion beam phase space (e.g. 35 keV, ${\varphi}3mm$, +-35 mrad), and the ability to control the average ion energy during interactions with the gas. A segmented RFQ instrument is currently being designed at Korea Institute for Science and Technology (한국과학기술연구원, KIST). It will consist of: a) an initial static voltage electrode deceleration region, to lower the ion energy from 35 keV down to ＜40 eV at injection into the first RFQ segment; b) the segmented quadrupole ion-gas interaction region; c) a static voltage electrode re-acceleration region for ion injection into a tandem accelerator. Design considerations and modeling will be discussed. This system should greatly lower the detection limits of the 6 MV AMS system currently being commissioned at KIST. As an example, current detection sensitivity of 41Ca/Ca is limited to the order of 10^-15 while the 41Ca/Ca abundance in modern samples is typically 41Ca/Ca~10^-14 - 10^-15. The major atomic isobaric interference in AMS is 41K. Proof-of-principal work at IsoTrace Lab. has demonstrated that a properly designed system can achieve a relative suppression of KF3-/41CaF3- ＞4 orders of magnitude while maintaining very high transmission of the 41CaF3- ion. This would lower the 41Ca detection limits of the KIST AMS system to at least 41Ca/Ca~10^-19. As Ca is found in bones and shells, this would potentially allow direct dating of valuable anthropological archives and archives relevant to our understanding of the most pronounced climate change events over the past million years that cannot be directly dated with the presently accessible isotopes.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.10
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• pp.1791-1795
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• 2007

Small ions generated at conductor corona sources remain in the atmosphere until they recombine with ions of opposite polarity, attach to aerosols, or make contact with an object. Ion current density is major factor to design conductor configuration of DC overhead transmission line. Several techniques have been used to measure the ion current of HVDC overhead transmission line. In this study, the ion current density was measured by a plate electrode made of a metal flat board at DC corona cage. The sensitivity of the plate electrode is $0.156uA/m^2/V$. To obtain an useful database on corona discharge, it is necessary to do corona test on several kinds of conductor bundles. Therefore, a number of experiments were conducted on several kinds of conductor bundles. To reliably analyze ion effects, corona cage test data were obtained over a long period of time under various weather conditions and expressed as a statistical distribution. Ion current density distribution in foul weather shows a significant increase in levels over the corresponding fair weather. Based on this results, we evaluated the environmental characteristic caused by ion flow of three candidated conductor bundles.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.4
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• pp.49-54
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• 2000

A new functional organic thin film optical waveguide ion sensor is designed, which can select a specific ion, i.e., $Ca^{2+}$ -ion. The sensing membrane was composed of PVC-PVAC-PVA copolymer matrix based on anionic cation-selective chromoionophor(ETH5294), neutral ionophore(K23El), anionic site and plasticizer and it was coated on the etched glass substrate as embeded type optical waveguide itself. The sensor sensitivity dependence on waveguide length and thickness, contence of chromoionophore, and each mode was investigated. And this sensor could detect $Ca^{2+}$ ion in concentrations ranging from 1$\times$10­6~1M(with 0.05M tris-HCI buffer solution of pH7.4) by measuring the absorbance change at 514nm of light. Utilizing thin film membrane, the fast response time and high sensitivity are obtained. Also, it is expected that this sensor can be applied to various biochemical important ions.ons.

• Applied Chemistry for Engineering
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• v.30 no.6
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• pp.737-741
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• 2019

A low-cost and flexible potassium ion (K⁺) sensor was fabricated through a screen-printed process. Uniform and conformal coating of conductive inks was verified by scanning electron microscopy and optical microscopy measurements. The K⁺-sensors showed a high sensitivity, fast response time, and low detection limit. The sensitivity of K⁺-sensor was similar to that of both mechanically normal and bent states. The K⁺-sensor exhibited a good reproducibility with no hysteresis effect and excellent long term stability. In addition, the K⁺-sensor showed an excellent selectivity for K⁺ concentrations in the presence of other interfering cation ions. Successful measurements of K⁺ concentrations in sports drink samples were demonstrated by comparing K⁺ concentration values from K⁺-sensor to those of using a commercial K⁺-meter.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.26-33
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• 1999

In order to examine the effect of beam location n the performance of bridge type piozoresistive silicon accelerometer, three sensors having different location of beams were simulated by FEN(finite element method) and fabricated by RIE(reactive ion etching) and KOH etching method using SDB(silicon direct bonding) wafer, Results of the FEM simulation present that the 1st resonace frequency and Z axis sensitivity of each sensor are identical but the 2nd, and the 3rd resonace frequency and X, Y axis sensitivity are different. Even though the 1st resonance frequency and Z axis sensitivity measured from fabricated sensors do not perfectly coincide with each other, all 3 type sensors present 180 ~ 220N/G of Z sensitivity at 5 V supply voltage and 1.3 ~ 1.7kHz of the 1st resonance frequency and about 2% of lateral sensitivity.

• Korean Journal of Environmental Biology
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• v.22 no.3
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• pp.394-399
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• 2004

A BOD sensor was prepared with S. marcescens LSY4 and was applied for measurement of BOD values of a solution containing the standard organic pollutants. The sensor sensitivity was nearly independent of the culture time in the range of 9-16 hours. It was also affected little by the cell mass in the range of 0.22-0.75 mg $cm^{-2}$. A cyclic change in the solution pH in the range of 4-9 was accompanied by a reversible variation in the sensor sensitivity. However, the reversibility was lost when the solution pH became more acidic or more basic. Heavy metal ions lowered the sensor sensitivity, which took place more precipitously in the presence of $Cu^{2+}$ and $Ag^+$ rather than in the presence of $Zn^{2+}$ and $Cd^{2+}$. The reduction of the sensor sensitivity was significantly attenuated by loading heavy metal ion tolerance induced strain. The $Cu^{2+}$tolerance induced strain was more efficient for the attenuation than $Zn^{2+}$ and $Cd^{2+}$ tolerance induced strain.