• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.231-236
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• 2008

B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.225-233
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• 2001

Distortion of Secondary Ion Mass Spectrometry(SIMS) depth profile, which is usually observed when the analysis is made using oxygen flooding on the surface of Si with oxide on it, has been corrected. The origin of distortion has been attributed to depth calibration error due to sputter rate difference and concentration calibration error due to relative sensitivity factor(RSF) difference between $SiO_2$ and Si layers, In order to correct depth calibration error, artifact in analysis of sodium ion on oxide was used to define the interface in SIMS depth profile and oxide thickness was measured with SEM and XPS. The differences of sputter rate and RSF between two layers have been attributed to volume swelling of Si substrate occurred by oxygen flooding induced oxidation. The corrected SIMS depth profiles showed almost the same results with those obtained without oxygen flooding.

• The Journal of Korean Medicine
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• v.20 no.1 s.37
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• pp.44-51
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• 1999

Analysis of residual pesticides in herbal drugs was performed by GC-ECD and GC-MS. Especially, selected ion monitoring(SIM) technique was applied to increase the GC/MS sensitivity. Analysis of residual pesticides was determined sensitivity and selectively without any internal standard by setting the SIM technique to their characteristic fragments for quantitation ion and confirmation ion. The combination of two detector, GC-ECD and MS-SIM technique, is abailable for determining a multiclass residual pesticides in herbal drugs. The average recoveries through the method were $65.9%{\sim}99.7%$ in herbal drugs. The data of gas chromatographic analysis was compared with the limits of residual pesticides in herbal drugs and agricultural foods. 4. 4-DDT was detected above the limits to the residual pesticides in herbal drugs. Diazinon and EPN were detected, but the limits of residual pesticides were less than that of agricultural foods.

• BMB Reports
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• v.30 no.4
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• pp.253-257
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• 1997

Negative ion fast atom bombardment (FAB) mass spectra were found to allow the determination of the linkage positions in a series of underivatized linkage-isomeric oligosaccharides. A previous work (Laine et al., 1988) reported that ion patterns of linkage-isomeric trisaccharides could be distinguished by a positive ion. Negative ion FAB collison-activated dissociation (CAD) mass spectrometry (MS) spectra of trisaccharides exhibited better sensitivity than the positive ion mode and provided specific fragmentation patterns according to the linkage positions. Especially, the fragmentations, m/z 205 in F6 and m/z 221 in G6, not occuring in 1-3 or 1-4 linkage. were an indication of 1-6 linkage, by changing collision energies from + 10 eV to +60 eV. The survival ratios of molecular ions in each collision energy set gave support to previous results in which the order of bond stability was 1-6>1-4>1-3 linkage.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1262-1264
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• 1993

An amorphous $Se_{75}Ge_{25}$ thin film as inorganic resist for the focused ion beam lithography(FIBL) is investigated. This film offers an attractive potential alternative to polymer resists because of a number of advantages, such as the possibility of preparing physically uniform films of thickness as small as 200A and obtaining both positive and negative resist action in the same material, compatibility with dry processing, the sensitivity on optical, e-beam and ion beam exposure, the high-temperature stability, etc. In previous paper, the defocused ion beam-induced characteristics in a-$Se_{75}Ge_{25}$ film has been propose. Practically it is neccesary to know the relation with resist and source ions. For the purpose, the ion stopping power, the ion projected range and ion transmission coefficiency are studied. In this paper, the theoretically calculated values of parameters are presented and compared with theory.

• Mass Spectrometry Letters
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• v.4 no.4
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• pp.91-94
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• 2013

We performed computer simulations to improve transmission efficiencies of a dual ion funnel system implemented on an FT-ICR MS. We found that the low m/z range from 50 to 150 could be significantly improved by operating the two ion funnels at different RF amplitudes. These new operational conditions could be applied to analyze metabolome samples, which require high sensitivity in the m/z range from 50 to 1,000.

• Journal of the Korean institute of surface engineering
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• v.37 no.4
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• pp.220-225
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• 2004

A new ion beam extraction system is designed using a simple ion mass filter and a micro mass balance and a QMS based detecting system. A quadrupole Mass Filter is used for selective ion beam formation from inductively coupled high density plasma sources with appropriate electrostatic lens and final analyzing QMS. Also a quartz crystal microbalance is set between a QMF and a QMS to measure the etching and polymerization rate of the mass selected ion beam. An inductively coupled plasma was used as a ion/radical source which had an electron temperature of 4-8 eV and electron density of $4${\times}$10^{11}$＃/㎤. A computer interfaced system through 12bit AD-DA board can control the pass ion mass of the qmf by setting RF/DC voltage ratio applied to the quadrupoles so that time modulation of pass ion's mass is possible. So the direct measurements of ion - surface chemistry can be possible in a resolution of $1\AA$/sec based on the qcm's sensitivity. A full set of driving software and hardware setting is successfully carried out to get fundamental plasma information of the ICP source and analysed $Ar^{+}$ beam was detected at the $2^{nd}$ QMS.

• Proceedings of the Korean Society of Crop Science Conference
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• 2022.10a
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• pp.153-153
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• 2022

There is a growing need to develop ion sensors for agriculture. As a result, several technologies have been developed, such as colorimetry, spectrophotometry, and ion-selective electrode (ISE). Among them, ISE has some advantages compared to others. First, it does not require pre-treatment processes and expensive equipment. Second, it is possible for the portable detection system by introducing small-sized electrodes. Finally, real-time and multiple detections of several ions are pursued. It is well-known that N, P, and K nutrients are critical for crop growth. With the development of agriculture techniques, the importance of soil nutrient analysis has attracted much attention for cost-effective and eco-friendly agriculture. Among several issues, minimizing the use of fertilizers is significant through quantitative analysis of soil nutrients. As a result, it is highly important to analyze certain nutrients, such as N (ammonium ion, nitrate ion, nitrite ion), P (dihydrogen phosphate ion, monohydrogen phosphate ion), and K (potassium ion). Therefore, developing sensors for accurate analysis of soil nutrients is highly desired. n this study, several ISEs have been fabricated to detect N, P, and K. Their performance has been intensively studied, such as sensitivity, selectivity coefficient, and concentration range, and compared with commercialized ISEs. In addition, preliminary tests on the in-situ N, P, and K monitoring have been conducted inside the soil.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.10a
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• pp.198-201
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• 2006

In this paper, we fabricated drag force type and pressure difference type gas flow sensor with dry etching technology which used Deep RIE(reactive ion etching) and etching stop technology which used SOI(silicon-on-insulator). we fabricated four kinds of sensor, which are cantilever, paddle type, diaphragm, and diaphragm with orifice type. Both cantilever and paddle type flow sensors have similar sensitivity as 0.03mV/V kPa. Sensitivity of the fabricated diaphragm and diaphragm with orifice type sensor were relatively high as about 3.5mV/V kPa, 1.5mV/V kPa respectively.