• Applied Microscopy
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• v.41 no.2
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• pp.89-98
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• 2011

Atom Probe Tomography (APT) can provide 3-dimensional information such as position and chemical composition with atomic resolution. Despite the ability of this technique, APT could not be applied for poor conductive materials such as semiconductor. Recently APT has dramatically developed by applying the laser pulsing and combining with Focused Ion Beam (FIB). The invention and combination of these techniques make possible site-specific sample preparation and permit the investigation of various materials including insulators. In this paper, we introduced the recently achieved state of the art applications of APT focusing on Si based FET devices, LED devices, low dimensional materials.

• Applied Microscopy
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• v.41 no.2
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• pp.81-88
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• 2011

Even though importance of nano-scale structure and compositional analysis have been getting increased, existing analysis tools have been reached to their limitations. Recent development of Atom Probe Tomography (APT), providing 3-dimensional elemental distribution and compositional information with sub-nm scale special resolution and tens of ppm detection limit, is one of key technique which can overcome these limitations. However, due to the fact that APT is not well known yet in the domestic research area, it has been rarely utilized so far. Therefore, in this article, the theoretical background of APT was briefly introduced with sample preparation to help understanding APT analysis.

• Bulletin of the Korean Chemical Society
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• v.31 no.1
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• pp.230-233
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• 2010

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.95-97
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• 2004

We studied a low temperature ion doping process for poly-Si Thin Film Transistor (TFT) on plastic substrates. The ion doping process was performed using an ion shower system, and subsequently, excimer laser annealing (ELA) was done for the activation. We have studied the crystallinity of Si surface at each step using UV-reflectance spectroscopy and the sheet resistance using 4-point probe. We found that the temperature has increased during ion shower doping for a-Si film and the activation has not been fulfilled stably because of the thermal damage against the plastic substrate. By trying newly a pulsed ion shower doping, the ion was efficiently incorporated into the a-Si film on plastic substrate. The sheet resistance decreased with the increase of the pulsed doping time, which was corresponded to the incorporated dose. Also we confirmed a relationship between the crystallinity and the sheet resistance. A sheet resistance of 300 ${\Omega}$/sq for the Si film of 50nm thickness was obtained with a good reproducibility. The ion shower technique is a promising doping technique for ultra low temperature poly-Si TFTs on plastic substrates as well as those on glass substrates.

• KSTLE International Journal
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• v.3 no.1
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• pp.12-16
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• 2002

Micro/nano tribological and water wetting characteristics of ion beam treated PTFE (polytetrafluoroethylene) surfaces were experimentally studied. The ion beam treatment was performed with a hollow cathode ion gun at different argon ion dose conditions in a vacuum chamber to modify the topography of PTFE surface. Micro/nano tribological characteristics, water wetting angles and roughness were measured with a micro tribe tester, SPM (scanning probe microscope), contact anglemeter and profilometer, respectively. Results showed that surface roughness increased with the argon ion dose. Water wetting angle of the ion beam treated samples increased with the ion dose, so the surface shows an ultra-hydrophobic nature. Micro-adhesion and micro-friction depend on the wetting characteristics of the PTFE samples. However, nano-tribological characteristics showed different results. The scale effect of surface topography on tribological characteristics was discussed. Also, the water wetting characteristics of modified PTFE samples were discussed in terms of the surface topographic characteristics.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.326-329
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• 2005

As a flexible method to fabricate sub-micrometer patterns, Focused Ion Beam (FIB) instrument and Self-Assembled Monolayer (SAM) resist are introduced in this work. FIB instrument is known to be a very precise processing machine that is able to fabricate micro-scale structures or patterns, and SAM is known as a good etch resistance resist material. If SAM is applied as a resist in FIB processing fur fabricating nano-scale patterns, there will be much benefit. For instance, low energy ion beam is only needed for machining SAM material selectively, since ultra thin SAM is very sensitive to $Ga^+$ ion beam irradiation. Also, minimized beam spot radius (sub-tens nanometer) can be applied to FIB processing. With the ultimate goal of optimizing nano-scale pattern fabrication process, interaction between SAM coated specimen and $Ga^+$ ion dose during FIB processing was observed. From the experimental results, adequate ion dose for machining SAM material was identified.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.3
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• pp.661-669
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• 1999

A probe card is one of the most important pan of test systems as testing IC(integrated circuit) chips. This work was related to bump-type silicon vertical probe card which enabled simultaneous tests for multiple semiconductor chips. The probe consists of silicon cantilever with bump tip. In order to obtain optimum size of the cantilever, the dimensions were determined by FEM(finite element method) analysis. The probe was fabricated by RIE(reactive ion etching), isotropic etching, and bulk-micromachining using SDB(silicon direct bonding) wafer. The optimum height of the bump of the probe detemimed by FEM simulation was 30um. The optimum thickness, width, and length of the cantilever were 20 $\mum$, 100 $\mum$,and 400 $\mum$,respectively. Contact resistance of the fabricated probe card measured at contact resistance testing was less than $2\Omega$. It was also confirmed that its life time was more than 20,000 contacts because there was no change of contact resistance after 20,000 contacts.

• Transactions of the Korean Society of Automotive Engineers
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• v.6 no.5
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• pp.191-198
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• 1998

In this study, the effects of water vapor in inlet air, spark advance and fuel type in the spark ignition engine were investigated through the experiments of combustion and flame arriving pattern analysis using ionization probe. The results of flame propagation experiment using ionization probe show that the flame which ignited from spark plug located at the center of the combustion chamber propagated faster in exhaust side than in intake side due to the mixture flow motion inducted into combustion chamber from intake tumble port at all conditions. And as the partial vapor pressure increased, the flame propagation became slower in all direction. Especially effects were greater for intake side than the exhaust side.

• Journal of information and communication convergence engineering
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• v.6 no.1
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• pp.73-79
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• 2008

Result that study magnet nerve curer for treatment induced current generation and current of ion for development in main point incontinence, prostate, sphincter, nervous system, rigidity, headache, retrogression arthritis, ligament damage, Rheumatism arthritis, peripheral nerve etc., can classify by 4. Embodied do first, full bridge magnet occurrence chapter, and communication with PC is available, confirmed various action loops an experiment. Could confirm correct treatment probe second, woman and man disease person. Third, derived so that healing may be possible naturally by addition of apron form according to disease. Because composition of finally, treatment probe composes by act of negative plate form, manufacture is easy and cooling designed for easy direction. More superior result of cooling appeared than existing in incidental and ingredients, cooling efficiency, composition, complexity, convenience etc. that expense and composition manufacture very straightforwardly and experimental by 2 - Tank ways.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.267-269
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• 2003

반도체 웨이퍼 및 각종 박막의 면/비저항(sheet/resistivity resistance)의 측정에 비교적 간단히 측정할 수 있고 측정정확도가 높은 4탐침(four-point probe)방법이 널리 사용되고 있다 또한 4탐침 측정방법은 높은 분해능의 contour map작성과 ion implantation의 doping accuracy 및 doping uniformity의 측정에도 사용된다. 최근 재료의 소형, 박막화 경향으로 볼 때 정확한 비저항 측정의 필요성이 요구되고 있으며 이에 따라 4탐침 측정기술인 single 및 dual configuration method로 실리콘 웨이퍼에 대한 비저항의 측정 정확도를 고찰한 결과 dual configuration 측정방법이 single configuration측정 방법에 비하여 정밀 정확도가 더 좋은 것으로 고찰되었다.