• Tribology and Lubricants
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• v.35 no.3
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• pp.169-175
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• 2019

In lithium-ion batteries (LIBs), the stress induced by the volume change of an electrode during charge-discharge processes may often cause the mechanical integrity of the electrode to degrade. Polymer binders with enhanced mechanical properties are preferred for improved mechanical integrity and cycling stability of the electrode. In addition, given that sliding and shearing between the polymer binder and components in the electrode may readily occur, frictional and adhesion characteristics of the polymer binder may play a critical role in the mechanical integrity of the electrode. In this study, frictional and adhesion characteristics of polyacrylonitrile (PAN) and polyvinylidene fluoride (PVDF) were investigated using a colloidal probe atomic force microscope. Friction loops were obtained under various normal forces ranging from 0 to 159 nN in air and electrolyte and then the interfacial shear strengths of PAN and PVDF in air were calculated to be $1.4{\pm}0.5$ and $1.3{\pm}0.3MPa$, respectively. The results show that in electrolyte, interfacial shear strength of PAN decreased slightly ($1.2{\pm}0.2MPa$), whereas that of PVDF decreased drastically ($0.06{\pm}0.01MPa$). Decreases in mechanical properties and adhesion in electrolyte may be responsible for the decrease in interfacial shear strength in electrolyte. The findings from this study may be helpful in developing polymer binders to improve the mechanical integrity of electrodes in LIBs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.285-288
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• 1997

Generally the high dielectric films, such as PZT(Pb(Z $r^{1-x}$ $Ti_{x}$ ) $O_3$) and BST(B $a_{l-x}$S $r_{x}$ Ti $O_3$) have been formed on the Pt thin films. However it is generally known that the dry etching of Pt is difficult because of its chemical stability. So, the dry etching of Pt remains at the preliminary work. Therefore, in this study, Pt etching mechanism was investigated with Ar/C $l_2$gas plasma by using XPS(X-ray photoelectron spectroscopy) and QMS(Quadrupole mass spectrometry). Ion current density was measured with Ar/C $l_2$gas plasma by using single Langmuir probe. XPS results shoved that the atomic % of Cl element on the etched Pt sample increased with increasing Ar/(Ar+C $l_2$). And QMS results showed that the increase of Ar partial pressure in the plasma resulted in the improvement of C $l_2$dissociation and Cl redical formation and simultaniously the increase of ion bombardment effects.s.s.

• Journal of Welding and Joining
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• v.33 no.3
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• pp.47-53
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• 2015

By the trends of electronic package to be more integrative, the fine Cu trace pitch of organic PCB is required to be a robust design. In this study, the short circuit failure mechanism of PCB with a Cl element under the Temperature humidity bias test ($85^{\circ}C$/85%RH/3.5V) was examined by micro-structural study. A focused ion beam (FIB) and an electron probe micro analysis (EPMA) were used to polish the cross sections to reveal details of the microstructure of the failure mode. It is found that $CuCl_x$ were formed and grown on Cu trace during the $170^{\circ}C$/3hrs and that $CuCl_x$ was decomposed into Cu dendrite and $Cl_2$ gas during the $85^{\circ}C$/85%RH/3.5V. It is suggested that Cu dendrites formed on Cu trace lead to a short circuit failure between a pair of Cu traces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.29-32
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• 2004

This work was devoted to an investigation of etching mechanisms for $(Ba,Sr)TiO_3$ (BST) thin films in inductively coupled $CF_4/Ar$ plasma. We have found that an increase of the Ar content in $CF_4/Ar$ plasma causes non-monotonic behavior of BST etch rate, which reaches a maximum value of 40 nm/min at 80% Ar. Langmuir probe measurements show a weak sensitivity of both electron temperature and electron density to the change of $CF_5/Ar$ mixing ratio. O-D model for plasma chemistry gave monotonic changes of both volume densities and fluxes for active species responsible for the etching process. The analysis of surface kinetics confirms the possibility of non-monotonic etch rate behavior due to the concurrence of physical and chemical pathways in ion-assisted chemical reaction.

• Journal of Institute of Control, Robotics and Systems
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• v.14 no.4
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• pp.336-341
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• 2008

Recently, research on a flat panel display(FPD) has focused on organic light-emitting display(OLED) which has wide angle of view, high contrast ratio and low power consumption. ITO(Indium-Tin-Oxide) films are the most widely used material as a transparent electrode of OLED and also in many other display devices like LCD or PDP. The performance and efficiency of OLED is related to the surface condition of ITO coated glass substrate. The typical surface defect of glass substrate is measured for electric characteristics and physical condition for transmittance and roughness. Since ITO coated glass substrate can be destroyed for inspection about surface roughness, sheet resistance, film thickness and transmittance, precise fabrication condition should be made based on the estimated relationship. In this paper, ITO films were prepared on the commercial glass substrate by the Ion-Plating method changing the partial pressure of gas(Ar, 02) and the chamber temperature between $200^{\circ}C$ and $300^{\circ}C$. The characteristics of films were examined by the 4-point probe, supersonic thickness measurement, transmittance measurement and AFM. We estimated the relationship between processing parameters(Ar gas, O2 gas, Temperature) and properties of ITO films (Sheet Resistance, Film Thickness, Transmittance, Surface Roughness).

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.816-823
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• 1996

Chlorine containing high density plasmas are widely used to etch various materials in the microelectronic device fabrication. In this study, the characteristics of inductively coupled $Cl_2(O_2/N_2$) plasmas and their effects on the formation of silicon etching have been investigated using a Langmuir probe, quadrupole mass spectrometry(QMS), X-ray photoelectron spectroscopy(XPS), and Scanning Electron Microscopy(SEM). The addition of oxygen for chlorine plasmas reduced ion current densities and chlorine radical densities compared to the nitrogen addition by the recombination of oxygen with chlorine. Also, when silicon is etched in $Cl_2/O_2$ plasmas, etch products recombined with oxygen such as $SiCl_xO_y$ emerged. However, when nitrogen is added to chlorine, etch products recombined with nitrogen or Si-N bondings on the etched silicon surface were not found. All the silicon etch characteristics were dependent on the plasma conditions such as ion density, radical density, etc. As a result sub micron vertical silicon trench etch profiles could be effectively formed using optimized etch conditions for $Cl_2/O_2\; and \;Cl_2/N_2$ gas combinations.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.148-154
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• 2003

Short ($\tau$=40 $mutextrm{s}$) and high-voltage ($U_{sub}$=2~8 kV) negative substrate bias pulses were used to assist pulsed magnetron sputtering DLC films deposition. Space- and time-resolved probe measurements of the plasma characteristics have been performed. It was shown that in case of high-voltage substrate bias spatial non-uniformity of the magnetron discharge plasma density greatly affected DLC deposition process. By Raman spectroscopy it was found that maximum percentage of s $p^3$-bonded carbon atoms (40 ~ 50%) in the coating was attained at energy $E_{c}$ ~700 eV per deposited carbon atom. Despite rather low diamond-like phase content these coatings are characterized by good adhesion due to ion mixing promoted by high acceleration voltage. Short duration of the bias pulses is also important to prevent electric breakdowns of insulating DLC film during its growth.wth.

• Journal of the Korea Society for Simulation
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• v.9 no.4
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• pp.51-58
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• 2000

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. The novel junction process scheme in sub-micron DRAM cell with STI(Shallow Trench Isolation) has been investigated to improve the tail component in the retention time distribution which is of great importance in DRAM characteristics. In this' paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced ${\Delta}Rp$ (projected standard deviation) increase using buffered N-implantation with tilt and 4X(4 times)-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N-concentration which is Intentionally caused by ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation. And also, we suggest the least requirements for adoption of this new implantation scheme and the method to optimize the key parameters such as tilt angle, rotation number, Rp compensation and Nd/Na ratio. We used MEDICI Simulator to confirm the junction device characteristics. And measured the refresh time using the ADVAN Probe tester.

• Bulletin of the Korean Chemical Society
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• v.26 no.6
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• pp.903-908
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• 2005

The sharp-line absorption and emission spectra of $(H_{13}O_6)${$trans-[Cr(Me_2tn)_2Br_2]$}$_2Br_2(ClO_4)\;(Me_2$tn = 2,2-dimethyl-1,3-diaminopropane) have been measured between 13000 $cm^{-1}$ and 16000 $cm^{-1}$ at 5 K. The 298 K infrared and visible absorption spectra have also been measured. The nine electronic bands due to spin-allowed and spin-forbidden transitions were assigned. Using observed transitions, a ligand field analysis has been performed to probe the ligand field properties of coordinated atoms in the title chromium(III) complex ion. The zero-phonon line in the sharp-line absorption spectrum splits into two components by 286 $cm^{-1}$, and the large $^2E_g$ splitting can be reproduced by the modern ligand field theory. It is confirmed that nitrogen atoms of the Me2tn ligand have a strong $\sigma$-donor character, but the bromide has weak $\sigma$- and $\pi$-donor properties toward chromium(III) ion.

• Bulletin of the Korean Chemical Society
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• v.30 no.7
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• pp.1607-1610
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• 2009

The carbon-coated Si/Cu powder has been prepared by mechanical ball milling and hydrocarbon gas decomposition methods. The phase of Si/Cu powder was analyzed using X-ray diffraction (XRD), dispersive Raman spectroscopy, electron probe microanalysis (EPMA) and transmission electron microscope (TEM). The carbon-coated Si/Cu powders were used as anode active material for lithium-ion batteries. Their electrochemical properties were investigated by charge/discharge test using commercial LiCo$O_2$ cathode and lithium foil electrode, respectively. The surface phase of Si/Cu powders consisted of carbon phase like the carbon nanotubes (CNTs) with a spacing layer of 0.35 nm. The carbon-coated Si/Cu/graphite composite anode exhibited a higher capacity than commercial graphite anode. However, the cyclic efficiency and the capacity retention of the composite anode were lower compared with graphite anode as cycling proceeds. This effect may be attributed to some mass limitations in LiCo$O_2$ cathode materials during the cycling.