• 한국결정성장학회지
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• 제7권1호
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• pp.143-150
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• 1997

본 연구는 수소로 희석된 $B_2H_6$를 도판트 소스 가스로 사용하여 이온 질량 주입(ion mass doping)을 하였을 때 다결정 박막의 전기적 특성과 도판트의 활성화시 방사 손상(radiation damage)의 효과에 대하여 고찰하였다. 다결정 박막에서 보론(boron)의 SIMS 분석과 컴퓨터 시뮬레이션인 TRIM92를 비교해서 가장 주입 확률이 높은 이온의 종류는 $B_2H_x\;^+$(x=1, 2, 3‥‥) 형태의 분자 이온임을 알았다. 높은 에너지의 질량 이온 주입 결과 시간에 따라 변화하는 비정질화된 층의 분율이 다결정 박막 내에 연속적인 비정질 충으로 존재하였다. 주입 이온의 질량 분리가 일어나지 않는 이온 질량 주입법(ion mass doping technique)에 의해 비정질화는 유발된다. 손상된 시편의 중간 열처리 온도 범위에서 도판트 활성화 거동과 역 열처리(reverse annealing) 효과가 관찰되었다. 이와 같은 연구의 결과 p-채널 다결정 박막 트랜지스터의 오프 스테이트(off-state) 전류는 방사 손상(radiation damage)에 의존한다.

• Mass Spectrometry Letters
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• 제7권4호
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• pp.111-115
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• 2016

Glycerol was identified and isolated from endogenous interferences during analysis of human urine using high-resolution mass spectrometry (HRMS) for doping control. Urinary sample preparation was simple; the samples were diluted with an organic solvent and then analyzed using a liquid chromatography-mass spectrometry ("dilute and shoot" method). Although the interfering ion peaks were observed at the similar retention time of glycerol, the inference could be identified by isolation with HRMS and further investigation. Thus, creatinine was identified as the endogenous interference for glycerol analysis and it also caused ion suppression resulting in the decrease of glycerol signal. This study reports the first identification and efficient isolation of endogenous interferences in human urine for "dilute and shoot" method. The information about ion suppression could be novel to prevent overestimation or a false result for antidoping analysis.

• 한국표면공학회지
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• 제27권4호
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• pp.234-240
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• 1994

A large area impurity doping method for poly-Si TFT LCD has been developed. The advantage of this method is the doping of impurities into Si over a large area without mass separation and beam scanning. Phosphorus diluted in hydrogen was discharged by RF(13.56MHz) power and ions from discharged gas were accelerated by DC acceleration voltage and were implanted into deposited Si films. The annealing characteristic of this method was similar to that of the ion implantation method in the low doping concentration. Three mechanisms were evolved in the annealing characteristics of phosphorus doped Si films. Point defects annihilation and the retrogradation of dopant atoms at grain boundaries as a result of grain growth played a major role at low and high annealing temperature, respectively. However, due to the dopant segregation, the reverse annealing range existed at intermediate annealing temperature.

• 대한전자공학회논문지SD
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• 제37권4호
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• pp.25-30
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• 2000

금속 유도 측면 결정화에 의한 다결정 실리콘 박막 트랜지스터의 제작에서 이온 질량 주입이 MILC 속도 및 거동에 미치는 영향을 분석하였다. 비정질 실리콘에 도펀트를 주입하거나 이온충돌을 가하면 MILC의 속도가 50% 이상 감소하고 MILC선단이 불균일 해졌다. IMD에 따른 비정질 실리콘 박막의 성질 변화를 분석하기 위하여 자외선 반사도 및 표면 거칠기를 관찰하였고, 이온 충돌에 의한 표면 거칠기의 증가가 MILC 속도 감소와 균일도에 영향을 주는 것으로 나타났다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 춘계 학술발표 강연 및 논문 개요집
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• pp.159-159
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• 1994

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.140-140
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• 2010

Non-mass analyzed ion shower doping (ISD) technique with a bucket-type ion source or mass-analyzed ion implantation with a ribbon beam-type has been used for source/drain doping, for LDD (lightly-doped-drain) formation, and for channel doping in fabrication of low-temperature poly-Si thin-film transistors (LTPS-TFT's). We reported an abnormal activation behavior in boron doped poly-Si where reverse annealing, the loss of electrically active boron concentration, was found in the temperature ranges between $400^{\circ}C$ and $650^{\circ}C$ using isochronal furnace annealing. We also reported reverse annealing behavior of sequential lateral solidification (SLS) poly-Si using isothermal rapid thermal annealing (RTA). We report here the importance of implantation conditions on the dopant activation. Through-doping conditions with higher energies and doses were intentionally chosen to understand reverse annealing behavior. We observed that the implantation condition plays a critical role on dopant activation. We found a certain implantation condition with which the sheet resistance is not changed at all upon activation annealing.

• E2M - 전기 전자와 첨단 소재
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• 제11권11호
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• pp.22-27
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• 1998

We have investigated the effect of an ion shower doping of the laser annealed poly-Si films at an elevated substrate temperatures. The substrate temperature was varied from room temperature to 300$^{\circ}C$ when the poly-Si film was doped with phosphorus by a non-mass-separated ion shower. Optical, structural, and electrical characterizations have been performed in order to study the effect of the ion showering doping. The sheet resistance of the doped poly-Si films was decreased from7${\times}$106 $\Omega$/$\square$ to 700 $\Omega$/$\square$ when the substrate temperature was increased from room temperature to 300$^{\circ}C$. This low sheet resistance is due to the fact that the doped film doesn't become amorphous but remains in the polycrystalline phase. The mildly elevated substrate temperature appears to reduce ion damages incurred in poly-Si films during ion-shower doping. Using the ion-shower doping at 250$^{\circ}C$, the field effect mobility of 120 $\textrm{cm}^2$/(v$.$s) has been obtained for the n-channel poly-Si TFTs.

• 전자공학회논문지D
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• 제34D권5호
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• pp.45-51
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• 1997

Low temperature activation of dopants which were doped using ion mass doping system in amorphous silicon(a-Si) thin films was investigated. With a 20.angs.-thick Ni film on top of the a-Si thin film, the activation temperature of dopants lowered to 500.deg. C. When the doping was performaed after the deposition of Ni thin film on the a-Si thin films (post-doping), the activation time was shorter than that of dopants mass, the activation time of the dopants doped by pre-doping method increased. It turned NiSi2 formation, while the decrease of activation time was mainly due to the enhancement of the NiSi2 formation by mixing of Ni and a-Si at the interface of Ni and a -Si thin during the ion doping process.

• 분석과학
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• 제8권2호
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• pp.139-159
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• 1995

몇 가지 종류의 corticosteroid에 대하여 액체 크로마토그래피-질량분석법으로 양이온 질량 스펙트럼을 얻었다. 화학구조에 따라 수소 첨가된 분자이온 [$MH^+$], 암모늄 첨가이온 [${MNH_4}^+$], 또는 ($MH^+-60$) 이온이 base peak였고 [$MH^+-18$] 또는 [${MNH_4}^+-18$] 이온 등이 특성적으로 나타났다. Methylprednisolone acetate를 male Sprague-Dawley rat에 경구투여한 다음 24시간 동안 배설된 뇨로부터 유리상태 또는 접합상태의 대사물질들을 가수분해, 추출 및 농축하고, thermospray LC/MS를 사용하여 양이온과 음이온 질량토막이온을 분석하였다. Methylprednisolone acetate의 C-21 위치에서의 탈아세틸화(deacetylation), C-20 위치에서 C=0의 -CHOH로의 환원, C-11 위치에서 CHOH의 C=0로의 산화 또는 C-17과 C-20 사이의 bond cleavage등에 의해 생성되는 것으로 추정되는 10여종의 대사물질을 검출하였다. 그 중에 20-hydroxymethylprednisolone(20-HMP), methylprednisolone(MP), methylprednisone(11-KMP)등은 표준물질과 비교 확인하였다.

• 대한화학회지
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• 제33권3호
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• pp.332-334
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• 1989