Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Effect of Ion Mass Doping on Metal-Induced Lateral Crystallization

이온 질량 주입이 금속 유도 측면 결정화에 미치는 영향

  • Kim, Tae-Gyeong (School of Materials Science and Engineering, Seoul National School) ;
  • Kim, Gi-Beom (School of Materials Science and Engineering, Seoul National School) ;
  • Yun, Yeo-Geon (School of Materials Science and Engineering, Seoul National School) ;
  • Kim, Chang-Hun (School of Materials Science and Engineering, Seoul National School) ;
  • Lee, Byeong-Il (School of Materials Science and Engineering, Seoul National School) ;
  • Ju, Seung-Gi (School of Materials Science and Engineering, Seoul National School)
  • 김태경 (서울대학교 재료공학부) ;
  • 김기범 (서울대학교 재료공학부) ;
  • 윤여건 (서울대학교 재료공학부) ;
  • 김창훈 (서울대학교 재료공학부) ;
  • 이병일 (서울대학교 재료공학부) ;
  • 주승기 (서울대학교 재료공학부)
  • Published : 2000.04.01
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Abstract

Ion mass doping method has been implemented for the fabrication of large area electronic devices such as TFT-LCD. In this work, the effect of ion mass doping on the velocity and the behavior of MILC was investigated. When amorphous silicon was either doped or bombarded by accelerated ions, MILC velocity was reduced by over 50% and the front edge of MILC became coarse. In order to analyze the dependence of silicon film's properties on ion mass doping, ultraviolet reflectance and sulfate roughness were investigated. Both the velocity and the behavior of MILC were found to be related with the increase of surface roughness by ion bombardment.

금속 유도 측면 결정화에 의한 다결정 실리콘 박막 트랜지스터의 제작에서 이온 질량 주입이 MILC 속도 및 거동에 미치는 영향을 분석하였다. 비정질 실리콘에 도펀트를 주입하거나 이온충돌을 가하면 MILC의 속도가 50% 이상 감소하고 MILC선단이 불균일 해졌다. IMD에 따른 비정질 실리콘 박막의 성질 변화를 분석하기 위하여 자외선 반사도 및 표면 거칠기를 관찰하였고, 이온 충돌에 의한 표면 거칠기의 증가가 MILC 속도 감소와 균일도에 영향을 주는 것으로 나타났다.

Keywords

References

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