• Archives of Pharmacal Research
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• 제23권4호
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• pp.407-412
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• 2000

The presence of the nitric oxide synthase (NOS) enzyme from Salmonella typhimurium (S. typhimurium) was identified by measuring radiolabeled L-$[^3H]$citrulline and NO, and Western blot analysis. NOS was partially purified by both Mono Q ion exchange and Superose 12HR size exclusion column chromatography, sequentially. The molecular weight of NOS was estimated to be 93.3 kDa by Western blot analysis. The enzyme showed a significant dependency on the typical NOS cofactors; an apparent Km for L-arginine of 34.7 mM and maximum activity between $37^{\circ}C$ and $43^{\circ}C$. The activity was inhibited by NOS inhibitors such as aminoguanidine and $N^{G}$ $N^{G}$-dimethyl-L-arginine. taken together, partially purified NOS in S. typhimurium is assumed to be a different isoform of mammalian NOSs.OSs.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.280-285
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• 2003

The influence of silicon surface damage on nickel-silicide (NiSi) has been characterized and H$_2$ anneal and TiN rapping has been applied to suppress the electrical, morphological deterioration phenomenon incurred by the surface damage. The substrate surface is intentionally damaged using Ar IBE (Ion beam etching) which can Precisely control the etch depth. The sheet resistance of NiSi increased about 18% by the surface damage, which is proven to be mainly due to the reduced silicide thickness. It is shown that simultaneous application of H: anneal and TiN capping layer is highly effective in suppressing the surface damage effect.

• 대한화학회지
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• 제13권3호
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• pp.199-204
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• 1969

4f 및 5f 系列 元素의 溶媒抽出에 있어서 分配速度를 測定해 본 結果 4f 系列의 前半部와 後半部 間에 明白한 差異를 볼 수 있었다. 三價의 Am 및 Cm은 4f 系列의 前半部와 類似함을 알았다. 또한 分配率과 抽出溫度와의 關係를 檢討해 본 結果 抽出系에 따라 獨特한 增加 또는 減少傾向이 나타났으며 또한 Chelate 抽出系에 있어서는 原子番號 存在性이 있음을 알았다

• 한국의학물리학회지:의학물리
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• 제6권2호
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• pp.13-19
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• 1995

준소조사면을 대상으로 한 측정자료로부터 콜리메이터에의한 산란영향과 웨지(wedge) 사용에 따른 부가적 효과를 알아보았다. 6MV 의료용 선형가속기에서 발생된 방사선속의 중심축에서 공기중과 폴리스틸렌 팬톰, 물에대해 점리함 및 반도체검출기를 이용한 측정으로 헤드산란(위ㆍ아래 콜리메이터)의 방사선 기원과 그 크기를 결정하였다. 편평화 필터에서 형성된 산란이 대부분 윗 콜라메이터 조절에 의한 영향이 가장 크게 미침을 알수 있었다. 준소조사면에서 웨지인자(wedge factor)의 깊이에대한 영향은 웨지 각이 클수록 많은 경향을 보였고 조사변에대한 영향은 0.28%였다. 임상적으로 10 $\times$10$\textrm{cm}^2$ 이하의 준소조사면과 wedge가 부가적으로 사용되는 10cm 깊이 이하의 조사면 변화에대한 관심으로 헤드산란 및 워지에의한 영향을 확인함으로서보다 적합한 선량계산을 도모하고자 하였다.

• 한국의학물리학회지:의학물리
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• 제17권3호
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• pp.131-135
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• 2006

본 연구의 목적은 2차원적 이온전리함 배열의 특성을 분석하고 세기변조방사선치료 선량분포 확인의 유용성을 평가하기 위함이다. 본 실험에 사용된 2차원적 이온전리함 배열(MatriXX, Scanditronix-Wellhofer, IBA, Germany)은 $24{\times}24cm^2$ 범위에 1,024개의 평판형 전리함(용적: $0.08cm^3$, 직경: 4.5 mm, 높이: 5 mm, 배열간격: 7.62 mm)이 일정한 간격으로 배열되어있다. MatriXX의 특성분석을 위해 선량 직선성, 선량률 의존도, 출력 계수, 단기 선릉재현성을 분석하였으며, 선량분포 확인의 신뢰도를 평가하기 위해 Varian사의 동적쐐기와 세기변조 방사선치료의 선량분포를 분석하였다. 선량 직선성의 범위는 $1{\sim}800$cGy이었으며, 1% 미만의 오차율을 보였다. 선량률 의존성(범위 $100{\sim}600MU/min$)은 300 Mu/min을 기준으로 했을 때 모든 선량률 범위에서 0.4% 미만의 선량변화를 보였다. 또한, 물팬톰에서 0.1 cc 지두형 전리함으로 측정한 출력계수와 폴리스틸렌 팬톰에서 MatriXX로 측정한 출력계수를 비교하였다. 이 실험의 결과, $3{\times}3{\sim}24{\times}24cm^2$ 범위에서 0.5% 미만의 일치를 나타내었다. 단기 출력재현성 확인을 위하여 15분 간격으로 6회 측정한 결과, 0.5% 내의 차이를 보였다. 동적쐐기와 세기변조 방사선 조사면의 일치성 실험에서도 치료계획장치의 계산값과 필름측정값이 비교적 잘 일치함을 알 수 있었다. 본 연구를 통해 MatriXX의 물리적인 특성을 분석하였으며 세기변조방사선치료의 품질관리를 위한 유용성을 확인하였다.

• Bulletin of the Korean Chemical Society
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• 제29권10호
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• pp.1937-1940
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• 2008

The P1 duplex of Tetrahymena group I ribozyme is the important system for studying the conformational changes in folding of ribozyme. The formation of the P1 duplex between IGS and substrate RNA and the catalytic activity of ribozyme require a variety of metal ions such as $Mg^{2+}$ and $Mn^{2+}$. In order to investigate the effect of the $Mg^{2+}$ concentration on the conformation of the P1 duplex, the NMR study was performed as a function of $Mg^{2+}$ concentration. This study revealed that the less stable AU-rich region formed duplex at $50{^{\circ}C}$ under high $Mg^{2+}$ concentration condition but melts out under low $Mg^{2+}$ concentration condition. It was also found that in the active conformation under 10 mM $MgCl_2$ condition, the unstable central G${\cdot}$U wobble pair maintains the significant base pairing up to $50{^{\circ}C}$. This study provides the information of the unique feature of the P1 duplex structure and the roll of $Mg^{2+}$ ion on the formation of the active conformation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.297-298
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• 2005

We have fabricated twisted nematic (TN) liquid crystal cells doped by carbon nanotubes (CNTs) with different CNT wt. %. With a minute amount doping, multi-walled CNTs did not perturb the liquid crystal orientations at the off- and on-state. The hysteresis studies of voltage-dependent capacitance (V-C) under the influence of electric field generated by ac and dc voltage show that the residual do, which is tightly related to image sticking problem in liquid crystal displays, is greatly reduced due to ion trapping by CNTs. Also, the V-C hysteresis shows dependency of capacitance on concentration of multi-walled CNTs.

• 분석과학
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• 제6권1호
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• pp.83-92
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• 1993

0.05M TEAP를 지지전해질로 한 아세톤용액에서, 란탄늄 및 네오디늄과 몇 가지 리간드의 착물에 대한 전기화학적 거동인 환원전류의 유형, 가역성, 안정도상수, 전류함수 등을 폴라로그래피와 순환전압전류법으로 조사하였다. 환원파는 2단계로 나타났으며, 반응은 확산지배적이고 비가역적이었다. 또한 란탄족 금속이온의 착물에 대하여 안정도상수를 측정하였다.

• 한국전기전자재료학회논문지
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• 제24권8호
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• pp.674-677
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• 2011

The dependency of sputtering power on the electrical performances in amorphous HIZO-TFT (hafnium-indium-zinc-oxide thin film transistors) has been investigated. The HIZO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different sputtering power at room temperature. TOF-SIMS (time of flight secondary ion mass spectrometry) was performed to confirm doping of hafnium atom in IZO film. The field effect mobility (${\mu}FE$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing sputtering power. This result can be attributed to the high energy particles knocking-out oxygen atoms. As a result, oxygen vacancies generated in HIZO channel layer with increasing sputtering power resulted in negative shift in Vth and increase in on-current.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 제17회 워크샵 및 추계학술대회
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.