• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.91-99
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• 1994

Damage induced by Si ion implantation and its annealing behavior during rapid thermal annealing were investigated by cross-sectional TEM (transmission electron microscopy) and RB ( Rutherford backscattering) spectrum. 150keV and 50keV Si ions were implanted in Si (100) at room temperature with doses of 2${\times}10^{15}cm^{-2}$. And 100keV Si ions were implanted in Si with doses from 1${\times}10^{14}cm^{-2}$. A variety of damage structures were generated by Si ion implantation such as continuous amorphous layer extending to the surface buried amorphous layer and damage clusters. Damage clusters are annealed out at the lower annealing temperature of 550 $^{\circ}C$. However, event at the temperature of 110$0^{\circ}C$ end of range loops remain in the original lower amorphous/crystal interface in the case of continuous and buried amorphous layer formation. Extended defects in the shape of zipper dislocations are also observed at the middle of the recrystallized region in the buried amorphous layer.

• Environmental Engineering Research
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• v.24 no.2
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• pp.279-288
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• 2019

To obtain insightful knowledge of geochemical process controlling fluoride enrichment in groundwater of the villages near Shilabati river bank, West Bengal, India, multivariate statistical techniques were applied to a subgroup of the dataset generated from major ion analysis of groundwater samples. Water quality analysis of major ion chemistry revealed elevated levels of fluoride concentration in groundwater. Factor analysis (FA) of fifteen hydrochemical parameters demonstrated that fluoride occurrence was due to the weathering and dissolution of fluoride-bearing minerals in the aquifer. A strong positive loading (> 0.75) of fluoride with pH and bicarbonate for FA indicates an alkaline dominated environment responsible for leaching of fluoride from the source material. Mineralogical analysis of soli sediment exhibits the presence of fluoride-bearing minerals in underground geology. Hierarchical cluster analysis (HCA) was carried out to isolate the sampling sites according to groundwater quality. With HCA the sampling sites were isolated into three clusters. The occurrence of abundant fluoride in the higher elevated area of the observed three different clusters revealed that there was more contact opportunity of recharging water with the minerals present in the aquifer during infiltration through the vadose zone.

• Analytical Science and Technology
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• v.8 no.4
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• pp.715-722
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• 1995

The structural characterization for series of polyesters has been done by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Polymer fragments and intact oligomers composed of large numbers of repeat units have been investigated. Transesterification of polyesters in trifluoroacetic acid (TFA) and chlorodifluoroacetic acid (CFA) was monitored and reaction products were identified using TOF-SIMS. The shapes and intensities of clusters in transesterification spectra show good agreement with the theoretical isotope pattern. TOF-SIMS spectra were used to obtain information about the progress of the transesterification reaction.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.712-718
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• 2003

The effects of nitrogen ion implantation on vacuum evaporated cadmium sulphide (CdS) thin films were investigated by X-ray diffraction, optical transmittance spectra, and Raman scattering studies. The as-deposited CdS films have a hexagonal structure with preferential (0 0 2) orientation. Formation of Cd metallic clusters was observed in ion implanted films from the XRD patterns. The band gap of N+ implanted films decreased, whereas the optical absorption coefficient values increased with the increase of implantation dose. The Raman peak position appeared at 299 cm-1 and the FWHM increased with the ion dose. A decrease in the area of Raman peak of CdS Al(LO) mode is seen on implantation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.232-235
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• 2002

An 150 kV gas cluster ion accelerator was fabricated and assessed. The change of surface morphology and surface roughness were examined by an atom force microscope (AFM) after irradiation of $CO_2$ gas clusters on Si (100) surfaces at the acceleration voltages of 50 kV. The density of hillocks induced by cluster ion impact was gradually increased with the dosage up to 5$\times$10$^{11}$ ions/$\textrm{cm}^2$. At the boundary of the ion dosage of 10$^{12}$ ions/$\textrm{cm}^2$, the density of the induced hillocks was decreased and RMS (root mean square) surface roughness was not deteriorated further. At the dosage of 5x10$^{13}$ ions/$\textrm{cm}^2$, the induced hillocks completely disappeared and the surface became very flat. In addition, the irradiated region was sputtered. $CO_2$ cluster ions are irradiated at the acceleration voltage of 25 kV to remove hillocks on indium tin oxide (ITO) surface and thus to attain highly smooth surfaces. $CO_2$ monomer ions are also bombarded on the ITO surface at the same acceleration voltage to compare sputtering phenomena. From the AFM results, the irradiation of monomer ions make the hillocks sharper and the surfaces rougher On the other hand, the irradiation of $CO_2$ cluster ions reduces the hight of hillocks and planarize the ITO surfaces. From the experiment of isolated cluster ion impact on the Si surfaces, the induced hillocks m high had the surfaces embossed at the lower ion dosages. The surface roughness was slightly increased with the hillock density and the ion dosage. At higher than a critical ion dosage, the induced hillocks were sputtered and the sputtered particles migrated in order to fill valleys among the hillocks. After prolonged irradiation of cluster ions, the irradiated region was very flat and etched.

• Proceedings of the Membrane Society of Korea Conference
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• 2004.05b
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• pp.53-56
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• 2004

Morphology of membrane affects its performance [1]. For a constant amount of fixed charges, the distribution of these charges is also significant to its performance (2). In some ionomer membranes such as Nafion, the membrane fixed charge is not randomly distributed, but occurs in clusters. Thus, the membrane solution is phase-separated, with the ion clusters, acting as inverted micelles in a polymer solvent.(omitted)

• Applied Microscopy
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• v.50
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• pp.27.1-27.6
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• 2020

Transition metal dichalcogenides (TMD), which is composed of a transition metal atom and chalcogen ion atoms, usually form vacancies based on the knock-on threshold of each atom. In particular, when electron beam is irradiated on a monolayer TMD such as MoS₂ and WS₂, S vacancies are formed preferentially, and they are aligned linearly to constitute line defects. And then, a hole is formed at the point where the successively formed line defects collide, and metal clusters are also formed at the edge of the hole. This study reports a process in which the line defects formed in a monolayer WS₂ sheet expends into holes. Here, the process in which the W cluster, which always occurs at the edge of the formed hole, goes through a uniform intermediate phase is explained based on the line defects and the formation behavior of the hole. Further investigation confirms the atomic structure of the intermediate phase using annular dark field scanning transition electron microscopy (ADF-STEM) and image simulation.

• Bulletin of the Korean Chemical Society
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• v.23 no.1
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• pp.107-111
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• 2002

The OSS2 (Oj？me-Shavitt-Singer 2)[L. Oj？me et al., J. Chem. Phys. 109, 5547 (1998)] model for the solvated proton in water is examined for $H_2O,\;H_3O^+,\;H_5O_2^+,\;H_7O_3^+,\;and\;H_9O_4^-$ by molecular dynamics (MD) simulations. The equilibrium molecular geometries and energies obtained from MD simulations at 5.0 and 298.15 K agree very well with the optimized calculations.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.90-94
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• 1995

Defects introduced by Si, Ge preamorphization and their effects on the dopant diffusion and electrical characteristics. Good crystalline quality are obtained after the annealing of Ge ion double implanted samples. The defect clusters under the a/c interface are expected to extend up to the deep in the Si ion implanted samples. The dislocation loops near the junction absorb the interstitial Si atoms resolving from the defect cluster and result in the prevention of enhanced boron diffusion near the tail region of boron profile and show good reverse current charactristics.

• The Bulletin of The Korean Astronomical Society
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• v.45 no.1
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• pp.55.2-55.2
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• 2020

Radio relics in the outskirts of galaxy clusters are interpreted as synchrotron radiation due to the relativistic electrons produced via diffusive shock acceleration (DSA) in shocks with low sonic Mach numbers, Ms ≤ 3 in high beta ICM plasma. Electron injection into the DSA process at such weak shocks is one of the key elements, which has yet to be fully understood. In this study, we explore the nature of kinetic microinstabilities excited in weak quasi-perpendicular shocks through 2D particle-in-cell simulations. We find Alfven-ion cyclotron (AIC), whistler, and mirror instabilities can be triggered by ion and electron temperature anisotropy in the immediate downstream of supercritical shocks with Ms > Mcrit ~ 2.3. In particular, AIC instability causes rippling of the shock surface, which in turn generates plasma waves on multi-scales and faciliates the electron preacceleration. Our results may contribute to understanding the origins of radio relics.