• 제목/요약/키워드: ion beam milling

검색결과 70건 처리시간 0.022초

Alternative Sample Preparation Method for Large-Area Cross-Section View Observation of Lithium Ion Battery

  • Kim, Ji-Young;Jeong, Young Woo;Cho, Hye Young;Chang, Hye Jung
    • Applied Microscopy
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    • 제47권2호
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    • pp.77-83
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    • 2017
  • Drastic development of ubiquitous devices requires more advanced batteries with high specific capacitance and high rate capability. Large-area microstructure characterization across the stacks of cathode, electrolyte and anode might reveal the origin of the instability or degradation of batteries upon cycling charge. In this study, sample preparation methods to observe the cross-section view of the electrodes for battery in SEM and several imaging tips are reviewed. For an accurate evaluation of the microstructure, ion milling which flats the surface uniformly is recommended. Pros and cons of cross-section polishing (CP) with Ar ion and focused ion beam (FIB) with Ga ion were compared. Additionally, a modified but new cross-section milling technique utilizing precision ion polishing system (PIPS) which can be an alternative method of CP is developed. This simple approach will make the researchers have more chances to prepare decent large-area cross-section electrode for batteries.

이온빔을 이용한 마이크로/나노 가공: 모델링 (Ion Beam Induced Micro/Nano Fabrication: Modeling)

  • 김흥배
    • 한국정밀공학회지
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    • 제24권8호통권197호
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    • pp.108-115
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    • 2007
  • 3D nano-scale manufacturing is an important aspect of advanced manufacturing technology. A key element in ability to view, fabricate, and in some cases operate micro-devices is the availability of tightly focused particle beams, particularly of photons, electrons, and ions. The use of ions is the only way to fabricate directly micro-/ nano-scale structures. It has been utilized as a direct-write method for lithography, implantation, and milling of functional devices. The simulation of ion beam induced physical and chemical phenomena based on sound mathematical models associated with simulation methods is presented for 3D micro-/nanofabrication. The results obtained from experimental investigation and characteristics of ion beam induced direct fabrication will be discussed.

Fabrication of interface-controlled Josephson Junctions by Ion beam damage

  • 김상협;김준호;성건용
    • Progress in Superconductivity
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    • 제3권2호
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    • pp.168-171
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    • 2002
  • We have demonstrated ramp-edge Josephson junctions using high temperature superconductors without depositing artificial barriers. We fabricated a surface barrier formed naturally during an ion beam etching process and the annealing under the oxygen atmosphere. The experimental results imply that the barrier natures such as the resistivity are varied by the annealing conditions and the ion milling conditions including the beam voltages. Thus, the ann eating and etching conditions should be optimized to obtain excellent junction properties. In optimizing the fabricating factors, the interface-controlled junctions showed resistively shunted junctions like current-voltage characteristics and an excellent uniformity. These junctions exhibited a spread ($1\sigma$) of $I_{c}$ is 10% fur chips containing 7 junctions at 50K.K.

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의생물 연구 분야에서 집속이온빔장치의 응용 (Applications of Focused Ion Beam for Biomedical Research)

  • 김기우;백생글;박병준;김현욱;류임주
    • Applied Microscopy
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    • 제40권4호
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    • pp.177-183
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    • 2010
  • 집속이온빔장치(focused ion beam, FIB)는 전자보다 무거운 양이온빔을 이용하여 시료를 10~100 nm 정도로 깎아 낼 수 있는 장비로 주로 재료분야에서 활용되어 왔다. 최근 세계적으로 의생물 분야에서의 활용이 점차 늘어나고 있는 추세에 있어 국내연구자들의 이해를 돕기 위해 간단히 기기의 메커니즘과 그 활용예를 기술 하고자 한다. FIB에 주로 사용되는 갈륨(Ga)빔의 특성 때문에 시료의 표면을 효과적으로 쳐 낼 수 있고, 전계 방사형 주사전자현미경(FESEM)을 이용하면 그 표면의 영상을 얻을 수 있다. 이 두 가지 시스템을 하나의 시스템으로 묶어낸 것을 dual beam system이라고 한다. 최근 이러한 시스템을 이용하여 효모, 병원균에 감염된 식물 등이 소개되었으며, 통상적으로 경도가 높아 처리하기 힘든 상아나 어패류의 껍질 등의 시료를 효과적으로 분석한 연구도 있다. 또한 FIB를 이용한 밀링과 FESEM을 이용한 절단면 촬영을 반복하여 얻는 영상을 이용하여 신경계의 연결망을 재구성하려는 연구가 활발하게 진행되고 있다. FIB/FESEM dual beam은 의생물학 분야의 다양한 연구에 활용될 수 있는 유용한 도구며, 의생물 시료의 3차원 연구에 크게 기여할 수 있을 것으로 판단된다.

Preparation Method of Plan-View Transmission Electron Microscopy Specimen of the Cu Thin-Film Layer on Silicon Substrate Using the Focused Ion Beam with Gas-Assisted Etch

  • Kim, Ji-Soo;Nam, Sang-Yeol;Choi, Young-Hwan;Park, Ju-Cheol
    • Applied Microscopy
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    • 제45권4호
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    • pp.195-198
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    • 2015
  • Gas-assisted etching (GAE) with focused ion beam (FIB) was applied to prepare plan-view specimens of Cu thin-layer on a silicon substrate for transmission electron microscopy (TEM). GAE using $XeF_2$ gas selectively etched the silicon substrate without volume loss of the Cu thin-layer. The plan-view specimen of the Cu thin film prepared by FIB milling with GAE was observed by scanning electron microscopy and $C_S$-corrected high-resolution TEM to estimate the size and microstructure of the TEM specimen. The GAE with FIB technique overcame various artifacts of conventional FIB milling technique such as bending, shrinking and non-uniform thickness of the TEM specimens. The Cu thin film was uniform in thickness and relatively larger in size despite of the thickness of <200 nm.

Atom Probe Tomography: A Characterization Method for Three-dimensional Elemental Mapping at the Atomic Scale

  • Choi, Pyuck-Pa;Povstugar, Ivan
    • 한국분말재료학회지
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    • 제19권1호
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    • pp.67-71
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    • 2012
  • The present paper gives an overview about the Atom Probe Tomography technique and its application to powder materials. The preparation of needle-shaped Atom Probe specimens from a single powder particle using focused-ion-beam milling is described. Selected experimental data on mechanically alloyed (and sintered) powder materials are presented, giving insight into the atomic-scale elemental redistribution occurring under powder metallurgical processing.

Cross-sectional TEM Specimens Priparation of Precisely Selected Regions of Semiconductor Devices using Focused Ion Beam Milling

  • 김정태;김호정;조윤성;최수한
    • 한국재료학회지
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    • 제3권2호
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    • pp.193-196
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    • 1993
  • A procedure for preparing cross-sectional specimens for transmission electron microscopy(TEM)by focused ion beam(FIB)milling of specific regions of semiconductor devices is outlined. This technique enables TEM specimens to be pripared at precisely preselected area. In-situ #W thin film deposition on the top surface of desired site is complementally used to secure the TEM specimens to be less wedge shaped, which is main shortcoming of previous FIB-assisted TEM sample preparation technique. This technique is quite useful for the TEM sample priparation for fault finding and the characterization of fabrication process associated with submicron contact technologies.

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집속 이온빔과 디지털 화상 관련법를 이용한 고 탄소 미세 강선의 잔류 응력 측정 (Measurement of residual stress of steel filaments by using focused ion beam and digital image correlation)

  • 양요셉;배종구;강기주;박찬경
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2007년도 춘계학술대회 논문집
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    • pp.241-245
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    • 2007
  • The residual stress in axial stress in the axial direction of the steel filaments has been measured by using a method based on the combination of the focused ion beam (FIB) and high resolution strain mapping program (VIC-2D). That is, the residual stress was calculated from the measured displacement field before and after the introduction of a slot along the steel filaments. The displacement was obtained by the digital correlation analysis of high-resolution scanning electron micrographs, while the slot was introduced by FIB milling with low energy beam. The present measurement revealed that the residual stress within 8% of the magnitude was persistent in the steel filaments fabricated.

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