• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.173-176
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• 1997

Direct metal ion beam deposition is considered to be a whole new thin film deposition technique. Unlike other conventional thin film deposition processes, the individual deposition particles carry its own ion beam energies which are directly coupled for the formation of this films. Due to the nature of ion beams, the energies can be controlled precisely and eventually can be tuned for optimizing the process. SKION's negative C- ion beam source is used to investigate the initial nucleation mechanism and growth. Strong C- ion beam energy dependence has been observed. Complete phase control of sp3 and sp3, control of the C/SiC/Si interface layer, control of crystalline and amorphous mode growth, and optimization of the physical properties for corresponding applications can be achieved.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.581-584
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• 2005

Ion beam processing is one of the key technologies to realize mastless and resistless sub 50nm nano fabrication. Unwanted effects, however, may occur since an energetic ion can interact with a target surface in various ways. Depending on the ion energy, the interaction can be swelling, deposition, sputtering, re-deposition, implantation, damage, backscattering and nuclear reaction. Sputtering is the fundamental mechanisms in ion beam induced direct patterning. Re-deposition and backscattering are unwanted mechanisms to avoid. Therefore understanding of ion beam-solid interaction should be advanced for further ion beam related research. In this paper we simulate some important interaction mechanisms between energetic incident ions and solid surfaces and the results are compared with experimental data. The simulation results are agreed well with experimental data.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.474-477
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• 1996

The solid state cesium ion beam sputter deposition system has been developed for negative carbon ion beam deposition. The negative carbon ion beams are effectively produced by cesium ion bombardment. The C-ion beam current and deposition energy can be independently controlled for the deposition of a-D films. This system is very compact, reliable and high flux without any gas discharge or plasma and has been successfully used in the studies of the ion beam deposited amorphous diamond(a-D)

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.11
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• pp.4711-4717
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• 2011

Formation of TiN films by PVD method and the DC and RF sputtering deposition method can be applied, the injected gas to generate plasma ionization rate of the film forming speed is slow away, anything to increase the adhesion between films limitations have. To improve this, to investigate the deposition and ion beam evaporation simultaneously IBAD(Ion beam assisted deposition) when used, Ion beam surface coating material prior to the survey because the surface cleaning effect of a large, high film adhesion can be obtained. In addition, the high vacuum and low temperature, high purity thin film of uniform thickness in the benefits is.

• Applied Science and Convergence Technology
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• v.24 no.5
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• pp.162-166
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• 2015

Linear ion beams have been introduced for the ion beam treatments of flexible substrates in roll-to-roll web coating systems. Anode layer linear ion sources (300 mm width) were used to make the linear ion beams. Oxygen ion beams having an ion energy from 200 eV to 800 eV used for the adhesion improvement of Cu thin films on PET substrates. The Cu thin films deposited by a conventional magnetron sputtering on the oxygen ion beam treated PET substrates showed Class 5 adhesion defined by ASTM D3359-97 (tape test). Argon ion beams with 1~3 keV used for the ion beam sputtering deposition process, which aims to control the initial layer before the magnetron sputtering deposition. When the discharge power of the linear ion source is 1.2 kW, static deposition rate of Cu and Ni were 7.4 and $3.5{\AA}/sec$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• Journal of information and communication convergence engineering
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• v.4 no.4
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• pp.158-161
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• 2006

[ $Bi_2Sr_2Ca_nCu_{n+1}O_y(n{\geq}0)$ ] thin film is fabricatedvia two different processes using an ion beam sputtering method i.e. co-deposition and layer-by-layer deposition. A single phase of Bi2212 can be fabricated via the co-deposition process. While it cannot be obtained by the layer-by-layer process. Ultra-low growth rate in our ion beam sputtering system brings out the difference in Bi element adsorption between the two processes and results in only 30% adsorption against total incident Bi amount by layer-by-layer deposition, in contrast to enough Bi adsorption by co-deposition.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.3
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• pp.209-216
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• 2008

The application of focused ion beam (FIB) depends on the optimal interaction of the operation parameters between operating parameters which control beam and samples on the stage during the FIB deposition process. This deposition process was investigated systematically in C precursor gas. Under the fine beam conditions (30kV, 40nm beam size, etc), the effect of considered process parameters - dwell time, beam overlap, incident beam angle to tilted surface, minimum frame time and pattern size were investigated from deposition results by the design of experiment. For the process analysis, influence of the parameters on FIB-CVD process was examined with respect to dimensions and constructed shapes of single and multi- patterns. Throughout the single patterning process, optimal conditions were selected. Multi-patterning deposition were presented to show the effect of on-stage parameters. The analysis have provided the sequent beam scan method and the aspect-ratio had the most significant influence for the multi-patterning deposition in the FIB processing. The bitmapped scan method was more efficient than the one-by-one scan type method for obtaining high aspect-ratio (Width/Height > 1) patterns.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.615-619
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• 2007

MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.