• 한국표면공학회지
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• 제29권5호
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• pp.474-477
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• 1996

The solid state cesium ion beam sputter deposition system has been developed for negative carbon ion beam deposition. The negative carbon ion beams are effectively produced by cesium ion bombardment. The C-ion beam current and deposition energy can be independently controlled for the deposition of a-D films. This system is very compact, reliable and high flux without any gas discharge or plasma and has been successfully used in the studies of the ion beam deposited amorphous diamond(a-D)

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.95.1-95.1
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• 2010

Transparent conducting ZnO films were deposited to apply DSSC Substrate on glass substrates at $500^{\circ}C$ by ionbeam-assisted deposition. Crystallinity, microstructure, surface roughness, chemical composition, electrical and optical properties of the films were investigated as a function of deposition parameters such as ion energy, and substrate temperature. The microstructure of the polycrystalline ZnO films on the glass substrate were closely related to the oxygen ion energy, arrival ratio of oxygen to Zinc Ion bombarded on the growing surface. The main effect of energetic ion bombardment on the growing surface of the film may be divided into two categories; 1) the enhancement of adatom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. The domain structure was obtained in the films deposited at 300 eV. With increasing the ion energy to 600 eV, the domain structure was changed into the grain structure. In case of the low energy ion bombardment of 300 eV, the microstructure of the film was changed from the grain structure to the domain structure with increasing arrival ratio. At the high energy ion bombardment of 600 eV, however, the only grain structure was observed. The electrical properties of the deposited films were significantly related to the change of microstructure. The films with the domain structure had larger carrier concentration and mobility than those with the grain structure, because the grain boundary scattering was reduced in the large size domains compared with the small size grains. The optical transmittance of ZnO films was dependent on a surface roughness. The ZnO films with small surface roughness, represented high transmittance in the visible range because of a decreased light surface scattering. By varying the ion energy and arrival ratio, the resistivity and optical transmittance of the films were varied from $1.1{\times}10^{-4}$ to $2.3{\times}10^{-2}{\Omega}cm$ and from 80 to 87%, respectively. The ZnO film deposited at 300 eV, and substrate temperature of $500^{\circ}C$ had the resistivity of $1.1{\times}10^{-4}{\Omega}cm$ and optical transmittance of 85% in visible range. As a result of experiments, we provides a suggestition that ZnO thin Films can be effectively used as the DSSC substrate Materials.

• 한국진공학회지
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• 제12권S1호
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• Applied Microscopy
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• 제48권4호
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• pp.122-125
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• 2018

The focused ion beam (FIB) method is widely used to prepare specimens for observation by transmission electron microscopy (TEM), which offers a wide variety of imaging and analytical techniques. TEM has played a significant role in material investigation. However, the FIB method induces amorphization due to bombardment with the high-energy gallium ($Ga^+$) ion beam. To solve this problem, electron beam induced deposition (EBID) is used to form a protective layer to prevent damage to the specimen surface. In this study, we introduce an optimized TEM specimen preparation procedure by comparing the EBID of carbon and tungsten as protective layers in FIB. The selection of appropriate EBID conditions for preparing specimens for TEM analysis is described in detail.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.135-136
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• 1998

By the ion bombardment the original discrete layered structure is damaged and a uniformly mixed layer is formed by the intermixing of the films. Immediately after this dynamic cascade mixing a structure of this mixed layer is likely to be a mixture of randomly distributed atoms. Subsequently the mixed layered structure becomes a non-equilibrium structure such as the metastable pphase because the kinetic energies of the incident ions rappidly dissippate and host atoms within the collision cascade region are quenched from a highly energetic state. The formation of the metastable transition metal alloys using ion-beam-mixing has been extensively studied for many years because of their sppecific ppropperties that differ from those of bulk materials. in ion-beam-mixing the alloy or comppound is formed due to the atomic interaction between different sppecies during ion bombardment. in this study the metastable pphase formed by ion-beam-mixing pprocess is comppared with equilibrium one by arc-melting method by GXRD and XAS. Therfore we studied the fundamental characteristics of charge redistribution uppon alloying and formation of intermetallic comppounds. The multi-layer films were depposited on a wet-oxidized Si(100) substrate by sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr during depposition. These compprise 4 ppairs of Co and ppt layers where thicknesses of each layer were varied in order to change the alloy compposition.

• 한국위성정보통신학회논문지
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• 제9권1호
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• pp.33-37
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• 2014

본 연구에서는 이온빔을 조사한 폴리스타일렌 기판에 일정강도의 이온빔을 조사한 경우에 발생되는 액정배향의 특성에 대해서 연구하였다. 폴리스타일렌은 기계적강도 및 절연성에서 액정표시소자의 배향막으로 사용되는 폴리이미드 계열의 대체 물질로서 주목받고 있으며, 특히 비접촉 배향에서의 가능성이 새롭게 평가되고 있는 소재이다. 이온빔을 조사하여 이방성을 발생시킨 박막의 표면에서의 액정배향상태를 편광현미경으로 관찰하고, 액정배향에 기여한 메커니즘의 규명을 위해서 XPS(X-ray photoelectron spetroscopy) 분석을 사용하였다. 분석한 결과 15초까지의 이온빔 조사는 액정의 배향을 유발하는 중요한 원인으로 작용함을 알 수 있었으며, 이온빔조사에 의한 액정의 배향방법은 고온안정성도 겸비하고 있는 것을 실험을 통해서 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• Applied Science and Convergence Technology
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• 제25권5호
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• pp.98-102
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• 2016

The level set method has recently become popular in the simulation of semiconductor processes such as etching, deposition and photolithography, as it is a highly robust and accurate computational technique for tracking moving interfaces. In this research, full three-dimensional level set simulation has been developed for the investigation of focused ion beam processing. Especially, focused ion beam induced nanodot formation was investigated with the consideration of three-dimensional distribution of redeposition particles which were obtained by Monte-Carlo simulation. Experimental validations were carried out with the nanodots that were fabricated using focused $Ga^+$ beams on Silicon substrate. Detailed description of level set simulation and characteristics of nanodot formation will be discussed in detail as well as surface propagation under focused ion beam bombardment.

• 한국진공학회지
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• 제4권S2호
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• pp.163-169
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• 1995

Ion beam assisted deposition(IBAD) technique was used to synthesize hard coatings including diamond-like carbon(DLC), carbon nitride(CN) and metal-ceramic multilayered films. It was found that DLC films formed at low energy ion bombardment possess more $Sp^3$ bonds and much higher hardness. The films exhibited an excellent wear resistance. Nanometer multialyered Fe/TiC films was deposited by ion beam sputtering. The structure and properties were strongly dependent on the thickness of the individual layers and modulation wave length. It was disclosed that both hardness and toughness of the films could be enhanced by adjusting the deposition parameters. The CN films synthesized by IBAD method consisted of tiny crystallites dispersed in amorphous matrix, which were identified by electron diffraction pattern to be $\beta -C_3N_4$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.116-116
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• 2009

This paper focuses on improving organic thin film transistor (OTFT) characteristics by controlling the self-organization of pentacene molecules with an alignable high-dielectric-constant film. The process, based on the growth of pentacene film through high-vacuum sublimation, is a method of self-organization using ion-beam (IB) bombardment of the $HfO_2/Al_2O_3$ surface used as the gate dielectric layer. X-ray photoelectron spectroscopy indicates that the IB raises the rate of the structural anisotropy of the $HfO_2/Al_2O_3$ film, and X-ray diffraction patterns show the possibility of increasing the anisotropy to create the self-organization of pentacene molecules in the first polarized monolayer.