Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 1998.02a
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- Pages.135-136
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- 1998
Study of the Structure Change on Ion-Beam-Mixed CoPt Alloys.
- Son, J.H. (Department of Physics & Atomic-scale Surface Science Research Center Yonsei University) ;
- Lee, Y.S. (Department of Physics & Atomic-scale Surface Science Research Center Yonsei University) ;
- Lim, K.Y. (Department of Physics & Atomic-scale Surface Science Research Center Yonsei University) ;
- Kim, T.G. (Department of Physics & Atomic-scale Surface Science Research Center Yonsei University) ;
- Chang, G.S. (Department of Physics & Atomic-scale Surface Science Research Center Yonsei University) ;
- Woo, J.J. (Department of Physics, Chonnam National University) ;
- Whang, C.N. (Department of Physics & Atomic-scale Surface Science Research Center Yonsei University)
- Published : 1998.02.01
Abstract
By the ion bombardment the original discrete layered structure is damaged and a uniformly mixed layer is formed by the intermixing of the films. Immediately after this dynamic cascade mixing a structure of this mixed layer is likely to be a mixture of randomly distributed atoms. Subsequently the mixed layered structure becomes a non-equilibrium structure such as the metastable pphase because the kinetic energies of the incident ions rappidly dissippate and host atoms within the collision cascade region are quenched from a highly energetic state. The formation of the metastable transition metal alloys using ion-beam-mixing has been extensively studied for many years because of their sppecific ppropperties that differ from those of bulk materials. in ion-beam-mixing the alloy or comppound is formed due to the atomic interaction between different sppecies during ion bombardment. in this study the metastable pphase formed by ion-beam-mixing pprocess is comppared with equilibrium one by arc-melting method by GXRD and XAS. Therfore we studied the fundamental characteristics of charge redistribution uppon alloying and formation of intermetallic comppounds. The multi-layer films were depposited on a wet-oxidized Si(100) substrate by sequential electron beam evapporation at a ppressure of less than 5
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