• 설비공학논문집
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• 제7권1호
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• pp.89-97
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• 1995

Experimental study was performed for free convection and ice formation around two horizontal circular tubes which were placed vertically. Temperature and velocity distributions were visualized with real time holographic interferometry technique and tracer method. When water was cooled, super cooled region was formed around cooling pipe. It was found that flow induced by free convection always directed downwards when the coolant temperature was low, while it directed upwards when the coolant temperature was comparably high though it directed downwards initially. Flow phenomena with free convection were investigated in detail with varying cooling rate and length between cooling pipes. And growing process of dense ice was also investigated. Dendritic ice is suddenly formed within a supercooled region, and a dense ice layer begins to develop from the cooling wall.

• Journal of Electrical Engineering and information Science
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• 제2권6호
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• pp.208-211
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• 1997

We have fabricated a single-electron-tunneling(SET) transistor with a dual gate geometry based on the SOI structure prepared by SIMOX wafers. The split-gate is the lower-gate is the lower-level gate and located ∼ 100${\AA}$ right above the inversion layer 2DEG active channel, which yields strong carrier confinement with fully controllable tunneling potential barrier. The transistor is operating at low temperatures and exhibits the single electron tunneling behavior through nano-size quantum dot. The Coulomb-Blockade oscillation is demonstrated at 15mK and its periodicity of 16.4mV in the upper-gate voltage corresponds to the formation of quantum dots with a capacity of 9.7aF. For non-linear transport regime, Coulomb-staircases are clearly observed up to four current steps in the range of 100mV drain-source bias. The I-V characteristics near the zero-bias displays typical Coulomb-gap due to one-electron charging effect.

• 한국환경과학회지
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• 제8권5호
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• pp.633-637
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• 1999

A series of meterological observation using automation weather station(AWS) carried out to investigate characteristics of nocturnal meteorological parameters for 16~17 June 1998 at Buljeongdong mountain slope, Kyungbuk. Dry temperature at valley was lower than mountain because of high lapse rate at valley, so the strong inversion layer occurrenced at mountain slope for nighttime. Contrary of dry temperature, relative humidity of valley was higher than mountain for nighttime. Wind speed at valley from sunset to next day morning was lower than mountain, but that of valley after sunrise was higher than mountain. Wind direction at valley for all observation time were southeasterlies(SE), that of mountain for nighttime were northeasterlies(NE) or northnorthwesterlies(NNW), and that of mountain after sunrise were irregular. Vapor pressure at valley for all observation time was higher mountain, particularly the difference was high for nighttime.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 학술대회 및 기술세미나 논문집 디스플레이 광소자
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• pp.45-46
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• 2006

We have studied the viewing angle control using a twist nematic liquid crystal display (TN-LCDs). These TK-LCDs have the characteristics, of which is not good image quality, for examples low Contrast ratio and gray scale inversion problems at upper and down viewing direction. TN-LCDs have the function of switching between the wide viewing mode and narrow viewing angle mode using two tilted LC layers. Tilt angles of the two LC layers, $14^{\circ}$ and $60^{\circ}$ were required in both wide viewing angle and narrow viewing angle modes, respectively. Consequently, this device is compatible with two image performances of which the wide viewing angle mode and Narrow viewing angle mode.

• 공업화학
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• 제10권4호
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• pp.515-522
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• 1999

상분리 방법으로 비대칭 폴리에테르이미드막을 제조하였고, 수산화나트륨 수용액으로 막의 표면층을 개질 했을 때의 몰폴로지 변화를 반응기간과 반응용액 농도에 대하여 살려보았다. 표면층 몰폴로지는 개질 용액의 농도가 증가함에 따라 치밀한 구조에서 둥근 입자상의 형태로 변화되었고, 개질 시간이 증가될수록 치밀 영역이 증가되었다. 그러나 반응 농도가 아주 높거나 장시간 개질을 하면 비대칭 폴리에테르이미드막의 표면에서 치밀 구조층이 없어지는 결과를 나타냈다. 결과적으로, 표면의 몰폴로지는 개질 용액의 농도와 시간에 따라 크게 좌우됨을 알 수 있었다. 이러한 결과는 폴리에테르이미드가 수산화나트륨에 의해서 폴리아믹산으로 가수분해되면서 나타나는 현상으로 추측되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.259-259
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• 2010

Periodically polarity inverted (PPI) ZnO structures on (0001) Al2O3 substrates are demonstrated by plasmas assisted molecular beam epitaxy. The patterning and re-growth methods are used to realize the PPI ZnO by employing the polarity controlling method. For the in-situ polarity controlling of ZnO films, Cr-compound buffer layers are used.[1, 2] The region with the CrN intermediate layer and the region with the Cr2O3 and Al2O3 substrate were used to grow the Zn- and O-polar ZnO films, respectively. The growth behaviors with anisotropic properties of PPI ZnO heterostructures are investigated. The periodical polarity inversion is evaluated by contrast images of piezo-response microscopy. Structural and optical interface properties of PPI ZnO are investigated by the transmission electron microcopy (TEM) and micro photoluminescence ($\mu$-PL). The inversion domain boundaries (IDBs) between the Zn and the O-polar ZnO regions were clearly observed by TEM. Moreover, the investigation of spatially resolved local photoluminescence characteristics of PPI ZnO revealed stronger excitonic emission at the interfacial region with the IDBs compared to the Zn-polar or the O-polar ZnO region. The possible mechanisms will be discussed with the consideration of the atomic configuration, carrier life time, and geometrical effects. The successful realization of PPI structures with nanometer scale period indicates the possibility for the application to the photonic band-gap structures or waveguide fabrication. The details of application and results will be discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권3호
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• pp.159-167
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• 2005

Quantization effects (QEs), which manifests when the device dimensions are comparable to the de Brogile wavelength, are becoming common physical phenomena in the present micro-/nanometer technology era. While most novel devices take advantage of QEs to achieve fast switching speed, miniature size and extremely small power consumption, the mainstream CMOS devices (with the exception of EEPROMs) are generally suffering in performance from these effects. In this paper, an analytical model accounting for the QEs and poly-depletion effects (PDEs) at the silicon (Si)/dielectric interface describing the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of MOS devices with thin oxides is developed. It is also applicable to multi-layer gate-stack structures, since a general procedure is used for calculating the quantum inversion charge density. Using this inversion charge density, device characteristics are obtained. Also solutions for C-V can be quickly obtained without computational burden of solving over a physical grid. We conclude with comparison of the results obtained with our model and those obtained by self-consistent solution of the $Schr{\ddot{o}}dinger$ and Poisson equations and simulations reported previously in the literature. A good agreement was observed between them.

• 멤브레인
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• 제29권2호
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• pp.105-110
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• 2019

다공성 분리막은 입자성 물질을 제거하는데 산업적으로 다양하게 응용되고 있다. 기존 다공성 분리막 제작 방법과 다르게, 용액퍼짐 상분리법은 매우 간단하게 기공을 형성할 수 있다. 먼저 지지층으로 메쉬 위에 물을 적신 후, 물과 혼합되지 않은 용매에 폴리설폰 용액을 흘려준다. 이때 물과 혼합되지 않은 용매는 쉽게 기화되어 폴리설폰은 얇은 막으로 만들어지게 된다. 기공을 형성하기 위해 폴리설폰 용액에 물과 혼합할 수 있는 물질을 넣게 되면, 넣어주는 농도 비율에 따라 기공크기를 조절할 수 있게 된다. 막의 두께는 쉽게 용액의 농도로 조절이 된다. 다공성 분리막은 메쉬의 형성을 그대로 유지하고 있어 3차원 구조체를 형성하는데 매우 유용하다. 본 연구에서 제시된 용액 퍼짐 상분리법은 매우 낮은 생산단가와 쉬운 공정조절에 의해 기존 분리막에 비해 높은 가격경쟁력을 가질 수 있는 특징을 보이고 있다.

• 패션비즈니스
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• 제19권4호
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• pp.135-152
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• 2015

The purpose of this study is to explore the role of deconstruction and creative destruction in Maison Margiela’s fashion design code, which has opened the door to a new wave of innovative design since 1988. Using a combination of theoretical analysis, precedent research, and a review of existing literature, five years of Maison Margiela's works (2010-2014) were evaluated. The analysis shows that Maison Margiela’s Design Code consists of the following key elements: Addition, Extension, Asymmetry, Elimination, Deconstruction, Complanation, and Inversion. Addition refers to act of attaching additional pieces of fabric or clothing on the existing piece. Extension refers to the act of extending the design elements, such as their position or features. Asymmetry means the irregular positioning of left-to right and front-to-back length and features. Deconstruction could be seen in intentionally frayed sleeves, open seams, and tears in the cloth. The element of Elimination was evident in the removal of key pieces of clothing such as a coat, pants, blouse, and a jacket. Complanation refers to the reversion to a two dimensional contemplation of the human form rather than the more obvious 3-dimensional form. Finally, Inversion was used by displaying an inner layer of clothing on the outside or exposing seams or zippers in a way that people are not accustomed to seeing. It also meant that the order of wearing clothes was sometimes inverted, so external layers would be worn within clothing that are traditionally underneath. Maison Margiela’s creations represented a break

• 지구물리와물리탐사
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• 제8권2호
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• pp.145-155
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• 2005

경상북도 포항시 흥해읍 일대에서 지열자원 개발을 위한 심부 파쇄대 탐지를 목적으로 수행된 자기지전류 (MT) 탐사에서 경북 안동과 충북 청원시의 대청호 및 일본의 Kyushu에 원거리 기준점을 설치하고 이를 이용한 자료처리 결과의 상호 비교를 통하여 원거리 기준점에 따른 겉보기 비저항과 위상 자료의 질을 검토하였다. 대상지역에서 약 165 km떨어진 대청호 자료를 이용한 경우는 전력주파수인 60 Hz대역과 자연 전자기장 신호가 미약한 $10^{-1}Hz\~1\;Hz$ 대역을 제외한 주파수 대역에서 매우 좋은 자료를 얻을 수 있었으며, 약 480 km 떨어진 Kyushu 원거리 기준점 자료를 이용해서 거의 모든 주파수 대역에서 연속성이 매우 좋은 전기비저항과 위상 곡선을 얻을 수 있었다. 이를 이용하여 2차원 역산을 수행한 결과, 지표의 10ohm-m 이내의 전기비저항을 보이는 반고결 이암층은 대상지역의 남쪽에서는 약 500 m 이상, 북쪽에서는 200 m 이내의 두께로 분포하며 북에서 남으로 경사진 형태로 나타났다. 심도 $500\~1,500m$에서 저비저항(L-2)과 고비저항(H-2)의 경계면은 단층면으로 해석되며 측점 206, 112와 414를 지나는 대략 $N15^{\circ}E$의 주향을 보인다. 1 km 이내의 천부의 저비저항 이상(L-4)은 파쇄대로 해석되며 측점 105를 지나면서 데략 $N60^{\circ}W$의 주향을 보인다. 또한, 북쪽의 큰 하천을 따라 저비저항 이상대가 공통적으로 나타나 구조선일 가능성을 시사한다. 그리고, 대상지역의 서쪽과 서남쪽의 $2\~3km$ 하부에서 10 ohm-m이내의 저비저항 이상대(L-3)가 나타나는데 이 층에 대해서는 향후 추가적인 연구가 요구된다.