• Korean Journal of Materials Research
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• v.27 no.10
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• pp.557-562
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• 2017

The microstructural evolution and modulation of mechanical properties were investigated for a $Ti_{65}Fe_{35}$ hypereutectic alloy by addition of $Bi_{53}In_{47}$ eutectic alloys. The microstructure of these alloys changed with the additional BiIn elements from a typical dendrite-eutectic composite to a bimodal eutectic structure with primary dendrite phases. In particular, the primary dendrite phase changed from a TiFe intermetallic compound into a ${\beta}$-Ti solid solution despite their higher Fe content. Compressive tests at room temperature demonstrated that the yield strength slightly decreased but the plasticity evidently increased with an increasing Bi-In content, which led to the formation of a bimodal eutectic structure (${\beta}$-Ti/TiFe + ${\beta}$-Ti/BiIn containing phase). Furthermore, the (Ti65Fe35)95(Bi53In47)5 alloy exhibited optimized mechanical properties with high strength (1319MPa) and reasonable plasticity (14.2 %). The results of this study indicate that the transition of the eutectic structure, the type of primary phases and the supersaturation in the ${\beta}$-Ti phase are crucial factors for controlling the mechanical properties of the ultrafine dendrite-eutectic composites.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.853-863
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• 2000

In this study, a new UBM materials system for solder flip chip interconnection of Cu pads were investigated using electroless copper (E-Cu) and electroless nickel (E-Ni) plating method. The interfacial reaction between several UBM structures and Sn-36Pb-2Ag solder and its effect on solder bump joint mechanical reliability were investigated to optimife the UBM materials design for solder bump on Cu pads. Fer the E-Cu UBM, continuous coarse scallop-like $Cu_{6}$ $Sn_{5}$ , intermetallic compound (IMC) was formed at the solder/E-Cu interface, and bump fracture occurred this interface under relative small load. In contrast, Fer the E-Ni/E-Cu UBM, it was observed that E-Ni effectively limited the growth of IMC at the interface, and the Polygonal $Ni_3$$Sn_4$ IMC was formed because of crystallographic mismatch between monoclinic $Ni_3$$Sn_4$ and amorphous E-Ni phase. Consequently, relatively higher bump adhesion strength was observed at E-Ni/E-Cu UBM than E-Cu UBM. As a result, it was fecund that E-Ni/E-Cu UBM material system was a better choice for solder flip chip interconnection on CU PadS.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.163-169
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• 2019

Sn-Pb solder alloys in electronics rapidly has been replaced to Pb free solder alloys because of various environmental regulations such as restriction of hazardous substances directive (RoHS), European Union waste electrical, waste electrical and electronic equipment (WEEE), registration evaluation authorization and of chemicals (REACH) etc. Because Sn58%Bi (in wt.%) solder alloy has low melting point and higher mechanical properties than that of Sn-Pb solder, it has been studied to manufacture electronic components. However, the reliability of Sn58%Bi solder could be lowered because of the brittleness of Bi element included in the solder alloy. Therefore, we observed the microstructures of Sn58%Bi composite solders with various contents of Sn-decorated multiwalled carbon nanotube (Sn-MWCNT) particles and evaluated bonding strength of the FR-4 components assembled with Sn58%Bi composite solder. Also, microstructures and bonding strengths of the Sn58%Bi composite solder joints were evaluated with the number of reflows from 1 to 7 times, respectively. Bonding strengths and fracture energies of the Sn58%Bi composite solder joints were measured by die shear test. Microstructures and fracture modes were observed with scanning electron microscope (SEM). Microstructures in the Sn58%Bi composite solder joints were finer than that of only Sn58%Bi solder joint. Bonding strength and fracture energy of Sn58%Bi composite solder including 0.1 wt.% of Sn-decorated MWCNT particles increased up to 20.4% and 15.4% at 5 times in reflow, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.11-17
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• 2009

The drop impact reliability comes to be important for evaluation of the life time of mobile electronic products such as cellular phone. The drop impact reliability of solder joint is generally affected by the kinds of pad and reflow number, therefore, the reliability evaluation is needed. Drop impact test proposed by JEDEC has been used as a standard method, however, which requires high cost and long time. The drop impact reliability can be indirectly evaluated by using high speed shear test of solder joints. Solder joints formed on 3 kinds of surface finishes OSP (Organic Solderability Preservation), ENIG (Electroless Nickel Immersion Gold) and ENEPIG (Electroless Nickel Electroless Palladium Immersion Gold) was investigated. The shear strength was analysed with the morphology change of intermetallic compound (IMC) layer according to reflow number. The layer thickness of IMC was increased with the increase of reflow number, which resulted in the decrease of the high speed shear strength and impact energy. The order of the high speed shear strength and impact energy was ENEPIG > ENIG > OSP after the 1st reflow, and ENEPIG > OSP > ENIG after 8th reflow.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.23-27
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• 2017

This paper proposes an approach to predict the reliability of high temperature heaters by identifying their primary failure modes and mechanisms in the field. Test specimens were designed to have the equivalent stress conditions with the high temperature heaters in the field in order to examine the effect of stress conditions on the solder joint failures. There failures often result from cracking due to intermetallic compound (IMC) or void formation within a solder joint. Aging tests have been performed by exposing the test specimens to a temperature of $170^{\circ}C$ in order to reproduce solder joint failures in the field. During the test, changes in IMC formation were investigated by scanning electron microscopy (SEM) on the cross-sections of the test specimens, while changes in void formation were monitored both by resistance spectroscopy and by micro-computed tomography (microCT), alternately. The test results demonstrated the void volume within the solder increased as the time at the high temperature increased. Also, the phase shift of high frequency resistance was found to have high correlation with the void volume. These results implied the failure of high temperature heaters can be non-destructively predicted based on the correlation.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.3
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• pp.43-49
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• 2019

In this study, a new approach using graphene oxide (GO) powder-composited Sn-3.0Ag-0.5Cu(in wt.%) solder paste for improving the bending reliability of solder joints between a flexible substrate and small outline package (SOP) was suggested. The GO addition slightly affected the melting temperature, however, the change in the melting temperature was not significant. Meanwhile, we observed the addition of GO could suppress IMC growth and IMC thickness of solder joint during the reflow process. Moreover, the cyclic bending test was also performed for evaluation of reliability in solder joint and we could improve the cyclic bending reliability of solder joint by adding GO powders. For 0.2 wt.% of GO added to the solder joint, the bending lifetime was increased to 20% greater than that without GO. Pull strength and ductility of the solder joint with GO were also higher than those of the joint without GO and it was assumed that this effect by adding GO could contribute to improve cyclic bending reliability of solder joint.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.4
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• pp.198-205
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• 2023

We investigated the effects of Al and Mg on the microstructure and hardness of the coating layer of galvanized steel sheets, by thermodynamic calculations, X-ray diffraction, scanning electron microscopy, and Vickers hardness tests of Zn-0.2Al, Zn-6Al-2Mg, and Zn-10Al-5Mg coating layers. Regardless of the alloy composition of the galvanizing bath, a Fe-Al layer was observed between the coating layer and steel sheet. The Zn-0.2Al coating layer consists of major h.c.p. Zn phase and minor f.c.c. Al phase. The fraction of f.c.c. Al phase (containing a significant amount of Zn) of the coating layer increases with increasing the chemical composition of Al of the galvanizing bath. The h.c.p. MgZn₂ phase was formed in the Al/Mg-containing Zn-6Al-2Mg and Zn-10Al-5Mg coating layers, forming Zn-Al-MgZn₂ eutectic microstructure. The primary MgZn₂ phase was additionally formed in the Zn-10Al-5Mg coating layers containing high concentrations of Al and Mg. The Vickers hardness values of Zn-0.2Al, Zn-6Al-2Mg, and Zn-10Al-5Mg coating layers were 59.1 ± 1.2 HV, 161.2 ± 5.7 HV, and 215.5 ± 40.3 HV, respectively. The addition of Al and Mg increased the hardness of the coating layer by increasing the fraction of the Al phase (containing Zn) and MgZn₂ intermetallic compound, which were harder than the Zn phase.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.61-68
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• 2023

In this study, Sn-3.5Ag-15.0Fe composite solder was manufactured and applied to TLP bonding to change the entire joint into a Sn-Fe IMC(intermetallic compound), thereby applying it as a high-temperature solder. The FeSn₂ IMC formed during the bonding process has a high melting point of 513℃, so it can be stably applied to power modules for power semiconductors where the temperature rises up to 280℃ during use. As a result of applying ENIG surface treatment to both the chip and substrate, a multi-layer IMC structure of Ni₃Sn₄/FeSn₂/Ni₃Sn₄ was formed at the joint. During the shear test, the fracture path showed that cracks developed at the Ni₃Sn₄/FeSn₂ interface and then propagated into FeSn₂. After 2hours of the TLP joining process, a shear strength of over 30 MPa was obtained, and in particular, there was no decrease in strength at all even in a shear test at 200℃. The results of this study can be expected to lead to materials and processes that can be applied to power modules for electric vehicles, which are being actively researched recently.

• Resources Recycling
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• v.33 no.4
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• pp.36-46
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• 2024

We investigated a hydrometallurgical process of nickel recovery from Inconel 713C scrap. The process proceeded with a series of i) comminution of pyrometallurgical treated scrap, ii) sulfuric acid leaching, iii) solvent extraction of unreacted acid, molybdenum, aluminum, and precipitation of chromium, iv) crystallization of nickel sulfate by vacuum evaporation, and v) nickel electrowinning. The nickel-aluminum intermetallic compound, Ni₂Al₃, was formed by the pyrometallurgical pretreatment readily grounded under 75 ㎛. Sulfuric acid leaching was done for 2 hours in 2 mol/L, 20 g/L solid/liquid ratio, and 80 ℃. It revealed that over 98 % of nickel and aluminum was dissolved, whereas 28 % of molybdenum was. A nickel sulfate solution with 2.34 g/L for the crystallization of nickel sulfate hydrate was prepared via solvent extraction and precipitation. Over 99 % of molybdenum and aluminum and 93 % of chromium was removed. Nickel metal with 99.9 % purity was obtained by electrowinning with the nickel sulfate monohydrate in the cell equipped with anion exchange membranes for catholyte pH control. The membrane did not work well, resulting in a low current efficiency of 73.3 %.