• 제목/요약/키워드: intermetallic

검색결과 782건 처리시간 0.021초

자동차 경량소재 AlSiCu 합금의 기계적 특성을 개선하기 위한 최적의 이중 열처리공정 (Optimal Double Heat Treatment Process to Improve the Mechanical Properties of Lightweight AlSiCu Alloy)

  • 박상규;김정석
    • 한국기계가공학회지
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    • 제17권3호
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    • pp.102-108
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    • 2018
  • The objective of this study is to develop the mechanical properties of an AlSiCu aluminum alloy using the two-step solution heat treatment. The microstructure of the gravity casting specimen represents a typical dendrite structure with a secondary dendrite arm spacing (SDAS) of 40 um. In addition to the Al matrix, a large amount of coarsen eutectic Si phase, $Al_2Cu$ intermetallic phase, and Fe-rich phases is generated. The eutectic Si phases are fragmented and globularized with the solution heat treatment. The $Al_2Cu$ intermetallic phase is also resolutionized into the Al matrix. The $2^{nd}$ solution temperature at $525^{\circ}C$ may be an optimal condition to enhance the mechanical properties of the AlSiCu aluminum alloy.

GaSe및 GaTe계의 기계적 합금화 거동 (Mechanical Alloying of GaSe and GaTe Systems)

  • 최정보;안중호
    • 한국분말재료학회지
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    • 제21권5호
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    • pp.338-342
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    • 2014
  • In the present work, we investigated the mechanical alloying of binary Ga-Se(1:1) and Ga-Te(1;1) sysyems. The high-energy ball-milling was performed at $40^{\circ}C$ where one of constituents (Ga) is molten state. The purpose of the work was to see whether reactions between constituent elements are accelerated by the presence of a liquid phase. During the ball-milling, the liquid Ga phase completely disappeared and the resulting powders consist of nanocrystalline grain of ~20 nm with partly amorphized phases. However, no intermetallic compounds formed in spite of the presence of the liquid phases which has much higher diffusivity than solid constituents. By subsequent heat-treatments, the intermetallic compounds such as GaSe and GaTe formed at relatively low temperatures. The formation temperature of theses compound was much lower than those predicted by equilibrium phase diagram. The comparison of the ball-milled powders with un-milled ones indicated that the easy formation of intermetallic compound or allying occurs at low temperatures.

Ni 첨가된 용융아연 도금욕의 석출물과 계면반응 (Effects of Ni Addition on the Precipitate Formation and Interfacial Reaction in Hot Dipped Galvanizing Bath)

  • 이경구;최전;조규종;이도재
    • 한국표면공학회지
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    • 제34권3호
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    • pp.206-214
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    • 2001
  • The purpose of this study is to determine the effects of Ni on precipitate formation in a Ni added galvanizing bath, which has various Ni content from 0.03wt.% to 0.5wt.%. The addition of hi in the Ni containing galvanizing bath resulted in the formation of Al-Ni intermetallic compounds such as $Al_3$$Ni_2$ and $Al_2$Ni, which make up most of the top precipitates. At 0.07wt.%Ni, Al-Ni intermetallic compound formed sensitively with small amount of Al addition. By analysing the reaction thickness of galvanized steel, it was found that Ni addition in a Zn-0.18w1.%Al bath tended to suppress the formation of Fe-Zn intermetallic compounds but the formation of these compounds increased with increasing Ni concentration above 0.1wt.%.

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DISSIMILAR FRICTION-STIR WELDING OF ALALLOY 1050 AND MGALLOY AZ31

  • Park, Seung Hwan C.;Masato Michiuchi;Yutaka S. Sato;Hiroyuki Kokawa
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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    • pp.534-538
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    • 2002
  • Dissimilar friction stir welding of aluminum (AI) alloy 1050 and magnesium (Mg) alloy AZ31 was successfully done in the limited welding parameters. The dissimilar weld showed good quality and facility compared to conventional fusion weld. Transverse cross section perpendicular to the welding direction had no defects. The weld was divided into base material of Al alloy, an irregular shaped stir zone and base material of Mg alloy. The irregular shaped stir zone was roughly located around the initial weld center. The weld interface near plate surface shifted from initial weld centerline to the advancing side. Hardness profile of the weld was heterogeneous, and the hardness value of the stir zone was raised to about 150 Hv to 250 Hv. The mixed phase was identified to intermetallic compound $Mg_{17}$Al$_{12}$ using x-ray diffraction method, energy dispersive x-ray spectroscopy (EDX) and electron probe micro analysis (EPMA). The formation of intermetallic compound $Mg_{17}$Al$_{12}$ during FSW causes the remarkable increase in hardness value in the stir zone.one.

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고신뢰성 광모듈을 위한 솔더 범프의 전단강도와 시효 특성 (Shear Strength and Aging Characteristics in Solder Bumps for High Reliability Optical Module)

  • 유정희
    • Journal of Welding and Joining
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    • 제21권2호
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    • pp.97-101
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    • 2003
  • The change of microstructures in the base metal during transient liquid phase bonding process of directionally Ni base superalloy, GID-111 was investigated. Bonds were fabricated using a series of holding times(0~7.2ks) at three different temperatures. The flip chip bonding utilizing self-aligning characteristic of solder becomes mandatory to meet tolerances for the optical device. In this paper, a parametric study of aging condition and pad size of samples was evaluated. A TiW/Cu/electroplated Cu UBM structure was selected and the samples were aging treated to analyze the effect of intermetallic compounds with the time variations. An FIB technique was applied to the preparation of samples for TEM observations. An FIB technique is very useful to prepare TEM thin foil specimens from the solder joint interface. After aging treatment, the tendency to decrease in shear strength was measured and the structure of the solder and the UBM was observed by using SEM, TEM and EDS. As a result, the shear strength was decreased of about 21% in the 100${\mu}{\textrm}{m}$ sample at 17$0^{\circ}C$ aging compared with the maximum shear strength of the sample with the same pad size. In the case of the 12$0^{\circ}C$ aging treatment, 18% of decrease in shear strength was measured at the 100${\mu}{\textrm}{m}$ pad size sample. An intermetallic compound of Cu6Sn5 and Cu3Sn were also observed through the TEM measurement by using.

Discovery of Giant Magnetostriction in Amorphous RFe$_2$B (R = Sm, Tb) Alloys

  • Kim, Jai-Young
    • Journal of Magnetics
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    • 제1권2호
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    • pp.64-68
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    • 1996
  • Compared with the conventional magnetostriction in Ni alloys which are in the order of several tens ppm (Parts Per Million =10-6), RFe$_2$(R = rare earth element) Laves Phase intermetallic compounds show large saturation magnetostriction in the range of a few thousands ppm. However, the large external magnetic field necessary to obtain saturatio magnetostriction has due to large magnetocrystalline anisotropy energy restrained the applicationof magnetostriction materials in RFe$_2$intermetallic compounds. As a result of its solution, the largest published value of effective giant magnetostriction in a low external magnetic field (less than a few hundred Oe) is reported in this paper by means of amorphisation of RFe$_2$intermetallic compounds with the addition of boron, as a half metal. For the amorphous (SmFe$_2$)0.97 B0.03 alloys, the effective magnetostriction of -545 and -610 $\times$ 10-6 is obtained at 400 and 1,000 Ie, respectively. Moreover, the effective magnetostriction of 590 and 630$\times$10-6 in the amorphous (TbFe$_2$)0.98 B0.02 alloys is also found at 400 and 1,000 Oe, respectively. This result will provide a clue to understanding the effect of half metal on anomalous increase of the effective giant magnetostriction and attract the great attention for magnetostriction applications.

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시효처리된 연료전지 집전판용 Matte 주석도금 동판의 고온열화 거동과 비저항변화 (Degradation Behavior and Resistivity Changes After Thermal Aging of Matte Tin-Plated Copper Sheet for Current Collector in Fuel Cell)

  • 김주한;김재훈;구경완;금영범;정귀성;고행진;한상옥
    • 전기학회논문지
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    • 제58권8호
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    • pp.1559-1565
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    • 2009
  • Resistivity changes and intermetallic growth after thermal aging of Matter tin-plated copper sheet for current collector in fuel cell were investigated to survey the diffusion of Cu into Sn in interface and surface. The results show that the intermetallic growth and resistivity depended on thermal aging temperature and dwell time. In Sn plate on a Cu substrate, Cu6Sn5(${\mu}$) and Cu3Sn(${\varepsilon}$) intermetallics layer were formed at plate/substrate interface. Cu6Sn5(${\mu}$) intermetallics layer gradually changed Cu3Sn(${\varepsilon}$). Moreover Cu get through Sn layer and it was diffused in the surface at $200^{\circ}C$. On the other hand, only Cu3Sn(${\varepsilon}$) intermetallics layer were formed at plate/substrate interface at $300^{\circ}C$. Consequently, the intermetallics formation, thermal condition and oxidation of surface, causes increase in the resistivity of Tin-plated copper sheet.

Microstructural behavior on weld fusion zone of Al-Ti and Ti-Al dissimilar lap welding using single-mode fiber laser

  • Lee, Su-Jin;Katayama, Seiji;Kim, Jong-Do
    • Journal of Advanced Marine Engineering and Technology
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    • 제38권2호
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    • pp.133-139
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    • 2014
  • Titanium (Ti) metal and its alloys are desirable materials for ship hulls and other ocean structures because of their high strength, corrosion-resistance and light weight properties. And light weight and corrosion-resistant aluminum (Al) is the ideal metal for shipbuilding. The joining of Ti and Al dissimilar metals is one of the effective methode to reduce weight of the structures. Ti and Al have great differences in materials properties, and intermetallic compounds such as $Ti_3Al$, TiAl, $TiAl_3$ are easily formed at the contacting surface between Ti and Al. Thus, dissimilar welding and joining of Ti and Al are considered to be very difficult. However, it was clarified that ultra-high speed welding could suppress the formation of intermetallic compounds in the previous study. Results of tensile shear strength increases with an increase in the welding speed, and therefore extremely high welding speed (50 m/min) is good to dissimilar weldability for Ti and Al. In this study, therefore, full penetration dissimilar lap welding of Ti (upper) - Al (lower) and Al (upper) - Ti (lower) with single-mode fiber laser was tried at ultra-high welding speed, and the microstructure of the interface zones in the dissimilar Al and Ti weld beads was investigated.

고전도성 부품용 Al-Cu 주조복합재료의 계면 특성 (Interfacial Characteristics of Al-Cu Cast Composites for High Conductivity Applications)

  • 김정민;김남훈;고세현
    • 한국주조공학회지
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    • 제38권3호
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    • pp.55-59
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    • 2018
  • To optimize the conductivity and to reduce the weight by as much as possible, Al-Cu composites were prepared through a suction-casting procedure. Pure copper metal foam was infiltrated by melted aluminum with the use of the vacuum, after which warm rolling was conducted to remove several remaining pores at the interface between the Cu foam and the aluminum matrix. Despite the short casting time, significant dissolution of Cu into the melt was observed. Moreover, it was found that various Al-Cu intermetallic compounds arose at the interface during the isothermal heating process after the casting and rolling steps. The average thickness of the Al-Cu intermetallic compound tended to increase in proportion to the heating time. The electrical and thermal conductivity levels of the cast composites were found to be comparatively low, mainly due to the dissolution of the Cu foam and the formation of intermetallics at the interface.

Silicon 기반 IC 디바이스에서의 층간 절연막 특성 분석 연구 (Raman Spectroscopy Analysis of Inter Metallic Dielectric Characteristics in IC Device)

  • 권순형;표성규
    • 마이크로전자및패키징학회지
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    • 제23권4호
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    • pp.19-24
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    • 2016
  • Along the few nano sizing dimensions of integrated circuit (IC) devices, acceptable interlayer material for design is inevitable. The interlayer which include dielectric, interconnect, barrier etc. needs to achieve not only electrical properties, but also mechanical properties for endure post manufacture process and prolonging life time. For developing intermetallic dielectric (IMD) the mechanical issues with post manufacturing processes were need to be solved. For analyzing specific structural problem and material properties Raman spectroscopy was performed for various researches in Si semiconductor based materials. As improve of the laser and charge-coupled device (CCD) technology the total effectiveness and reliability was enhanced. For thin film as IMD developed material could be analyzed by Raman spectroscopy, and diverse researches of developing method to analyze thin layer were comprehended. Also In-situ analysis of Raman spectroscopy is introduced for material forming research.