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http://dx.doi.org/10.6117/kmeps.2016.23.4.019

Raman Spectroscopy Analysis of Inter Metallic Dielectric Characteristics in IC Device  

Kwon, Soon Hyeong (Department of Nano materials Science & Engineering, School of Integrative Engineering, Chung-Ang University)
Pyo, Sung Gyu (Department of Nano materials Science & Engineering, School of Integrative Engineering, Chung-Ang University)
Publication Information
Journal of the Microelectronics and Packaging Society / v.23, no.4, 2016 , pp. 19-24 More about this Journal
Abstract
Along the few nano sizing dimensions of integrated circuit (IC) devices, acceptable interlayer material for design is inevitable. The interlayer which include dielectric, interconnect, barrier etc. needs to achieve not only electrical properties, but also mechanical properties for endure post manufacture process and prolonging life time. For developing intermetallic dielectric (IMD) the mechanical issues with post manufacturing processes were need to be solved. For analyzing specific structural problem and material properties Raman spectroscopy was performed for various researches in Si semiconductor based materials. As improve of the laser and charge-coupled device (CCD) technology the total effectiveness and reliability was enhanced. For thin film as IMD developed material could be analyzed by Raman spectroscopy, and diverse researches of developing method to analyze thin layer were comprehended. Also In-situ analysis of Raman spectroscopy is introduced for material forming research.
Keywords
IC device; intermetallic material; intermetallic dielectric; Raman spectroscopy; IMD; thin film; in-situ;
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