• Journal of Aerospace System Engineering
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• v.6 no.2
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• pp.23-27
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• 2012

The evaluation of simulation models against ADS-33 quantitative rotorcraft handling qualities metrics has, in the past, been a time consuming effort, involving many individual analyses in both the time and frequency domains. Manual tuning of control system parameters to meet handling qualities and performance specifications has been cumbersome and complicated. Performing rigorous trade-off studies for numerous variations in the control system is too time consuming to be practicable. With the complex interaction of time- and frequency based specifications for the closed- and broken-loop responses, it is difficult to know if the design makes the most effective use of the available control power. The Control Designer's Unified Interface (CONDUIT) software makes possible rapid optimization and trade-offs of design configurations against handling qualities specifications.

• Transactions of the Korean Society of Automotive Engineers
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• v.11 no.1
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• pp.137-142
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• 2003

In automotive brake systems, the frictional heat generated can cause high temperature at the interface of rotor and pad which may deteriorate the material properties of the sliding parts and can result in brake fade. Conventionally, a pie-shaped 3-dimentional model is adopted to calculate temperature of ventilated disk using finite element method. To overcome the difficulties in preparing 3D finite element model and reduce the computational time required, the ventilated rotor is to be analyzed, in this study, as an axisymmetric finite element model in which, taking into considerations the effects of cooling passages, a homogenization technique is used to obtain the equivalent thermal properties and boundary conditions for the elements placed at the vent holes. Numerical tests show the proposed procedure can be successfully applied in practice, replacing 3-dimensional thermal analysis of ventilated disk.

• Proceedings of the Korean Geotechical Society Conference
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• 2002.03a
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• pp.329-336
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• 2002

The earth structures and in-ground LNG tank, and buildings can be constructed with using artificial freezing method on the reclaimed land. In this study, upon freezing a saturated soil in a closed-system from the top, a considerable pressure was developed. The pressure is the result of the surface energy of a curved ice-water interface. The most significant of these parameters will have the greatest effect on the classification. In order to establish frost-susceptibility criteria based on frost heaving expansion pressure, more soils have to be tested. This study was initiated to investigate the soils frost heaving expansion pressure and moisture characteristics resulting from freezing and freezing-thawing cycle process. Weathered granite soils, sandy soil, sandy soil were used in the laboratory freezing test subjected to thermal gradients under closed- systems.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.52 no.5
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• pp.206-206
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• 2003

It is hard to expect excellent electrical, mechanical and chemical properties from most of the composite materials presently used as insulators due to insufficient wettability property caused by the difference of interfacial properties between the matrix material and the reinforcer. Therefore, various interfacial coupling agents have been developed to improve the interfacial properties of composite materials. But if the wettable coupling agents are used outdoor for a long time, change in quality takes place in the coupling agents themselves, bringing about deterioration of the properties of the composite materials. In this study, glass surface was treated by plasma to examine the effect of dry interface treatment without coupling agent. It was identified that the optimum parameters for the best wettability of the samples at the time of generation of plasma were oxygen atmosphere, 0.1 torr of system pressure, 100 W of discharge power, and 3 minutes of discharge time. Also, the surface resistance rate and dielectric property were improved.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.5
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• pp.206-212
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• 2003

It is hard to expect excellent electrical, mechanical and chemical properties from most of the composite materials presently used as insulators due to insufficient wettability property caused by the difference of interfacial properties between the matrix material and the reinforcer. Therefore, various interfacial coupling agents have been developed to improve the interfacial properties of composite materials. But if the wettable coupling agents are used outdoor for a long time, change in quality takes place in the coupling agents themselves, bringing about deterioration of the properties of the composite materials. In this study, glass surface was treated by plasma to examine the effect of dry interface treatment without coupling agent. It was identified that the optimum parameters for the best wettability of the samples at the time of generation of plasma were oxygen atmosphere, 0.1 torr of system pressure, 100 W of discharge power, and 3 minutes of discharge time. Also, the surface resistance rate and dielectric property were improved.

• Journal of Electrical Engineering and Technology
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• v.9 no.4
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• pp.1394-1400
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• 2014

The current flowing through the overhead transmission lines causes induced voltage on the communication lines, which can be prevented by calculating the induced voltage at the planning stage for overhead transmission line installment through an agreement between the communication and electric power companies. The procedures to calculate the induced voltages, however, are complicated due to the variety of parameters and tower types of the overhead transmission lines. The difficulty necessitates the development of a simulator to measure the induced voltage on the communication lines. This paper presents two simulators developed for this purpose; one using the Data Base (DB) index method and the other using the Graphic User Interface (GUI) method. The simulators described in this paper have been implemented by the EMTP (Electromagnetic Transient Program).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.242-245
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• 1997

Co single layer and Co/Ti used to form a CoSi$_2$ contact. We fabricated the n+/p diodes with this CoSi$_2$ contact as diffusion source of As. The diodes wish CoSi$_2$ formed by Co/ri bilayer had more Bo7d electrical characteristics than CoSi$_2$ formed by Co single layer. This shows that the flatness of interface which is a parameters to affect the diodes\` electrical characteristics. And the electrical characteristics of diodes are more good when the second thermal activation processing temperature was low as much as 50$0^{\circ}C$ than the temperature high over than 80$0^{\circ}C$, it was thought as that the silicide was degradated at high temperature.

• Proceedings of the KIEE Conference
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• 1996.07b
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• pp.727-730
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• 1996

This paper presents a new on-line generator simulator which can be utilized for the control parameter setting of the exciter and the power system stabilizer (PSS). The proposed simulator equipped with A/D and D/A channels through which actual exciter and PSS can be connected. System parameters and disturbance sequence are easily programmed using friendly developed interface. The developed simulator is tested and verified by connecting a simple AVR implemented by op-amps.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.529-532
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• 1997

We studied the crystallization of a-Si:H thin film. Multi-crystallized Si films are preferred in many applications such as FPD, solar cells, RAM, and integrated circuits. Because most of these applications require a low temperature process, we investigated a crystallization of a-Si:H using a Cd layer. A metal Cd shows an eutectic point at a temperature of 321$^{\circ}C$. This paper present Cd layer assisted crystallization of a-Si:H film for the various grain growth Parameters such as anneal temperature, Cd layer thickness, and anneal time

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.173-176
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• 1997

The III-V nitride semiconductor InN thin films which have the direct bandgap in visible light wavelength region have been deposited on Si(100) substrates and AIN/Si(100) substrates by rf reactive sputtering. InN thin films have been investigated on the structural, and electrical properties according to the sputtering parameters such as total pressure, rf power, and substrate temperature. It is found that optimal conditions required for fabricating InN thin films with high crystal Quality, low carrier concentration, high Hall mobility are total pressure 5mTorr, rf power 60W, substrate temperature 6$0^{\circ}C$ . InN thin films deposited on the AIN(60min.)/Si(100) substrates arid AIN(120min.)/Si(100) substrates showed remarkably high crystal quality and electrical properties. It is known that AIN buffer layer is to decrease free energy at interface between InN film and Si substrate, and then promoting lateral growth of InN films.