• Title/Summary/Keyword: interface morphologies

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A study on th reaction between silicon in melt and carbon (용융상태에서의 silicon과 carbon의 반응에 관한 연구)

  • M.J. Lee;B.J. Kim;S.M. Kang;J.K. Choi;B.S. Jeon;Keun Ho Orr
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.4
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    • pp.336-346
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    • 1994
  • We studied the reaction between silicon and carbon. Silicon granules and silicon with 0.2 wt% carbon powders were prepared for sample and then they were heated up to the $1450^{\circ}C, 1550^{\circ}C, 1650^{\circ}C, 1700^{\circ}C$ and were dwelled 1 hr and 4 hrs, respectively. we studied the change of morphologies of molten silicon and the formation of SiC following the reaction withcarbon using optical microscope, SEM, and XRD. Above the melting point of silicon, oxygens are precipitated during the decomposition of quartz used crucible. SiO formed from the reaction between molten silicon and precipitated oxygen evaporated and made the surface defects. SiC were formed with the reaction between the unreacted carbon and molten silicon. Polytype of the SiC formed at the solidification interface was ${\alpha}-SiC$.

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Dry Friction Characteristics of Bulk Amorphous Thermal Spray Coating and Amorphous Metallic Matrix Composites (벌크 비정질 용사코팅과 비정질 기지 복합재료의 건조 마찰특성)

  • Jang, Beomtaek;Yi, Seonghoon
    • Tribology and Lubricants
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    • v.30 no.2
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    • pp.108-115
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    • 2014
  • The friction behaviors of bulk amorphous thermal spray coating (BAC) and second phase-reinforced composite coatings using a high velocity oxy-fuel spraying process were investigated using a ball-on-disk test rig that slides against a ceramic ball in an atmospheric environment. The surface temperatures were measured using an infrared thermometer installed 50 mm from the contact surface. The crystallinities of the coating layers were determined using X-ray diffraction. The morphologies of the coating layers and worn surfaces were observed using a scanning electron microscope and energy-dispersive spectroscopy. The results show that the friction behavior of the monolithic amorphous coating was sensitive to the testing conditions. Under lower than normal loads, a low and stable friction coefficient of about 0.1 was observed, whereas under a higher relative load, a high and unstable friction coefficient of greater than 0.3 was obtained with an instant temperature increase. For the composite coatings, a sudden increase in friction coefficient did not occur, i.e., the transition region did not exist and during the friction test, a gradual increase occurred only after a significant delay. The BAC morphology observations indicate that viscous plastic flow was generated with low loads, but severe surface damage (i.e., tearing) occurred at high loads. For composite coatings, a relatively smooth surface was observed on the worn surface for all applied loads.

The Structural and Electrical Properties of Bismuth-based Pyrochlore Thin Films for embedded Capacitor Applications

  • Ahn, Kyeong-Chan;Park, Jong-Hyun;Ahn, Jun-Ku;Yoon, Soon-Gil
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.2
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    • pp.84-88
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    • 2007
  • [ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ ] (BZN), $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN), and $Bi_2Cu_{2/3}Nb_{4/3}O_7$ (BCN) pyrochlore thin films were prepared on $Cu/Ti/SiO_2/Si$ substrates by pulsed laser deposition and the micro-structural and electrical properties were characterized for embedded capacitor applications. The BZN, BMN, and BCN films deposited at $25\;^{\circ}C$ and $150\;^{\circ}C$, respectively show smooth surface morphologies and dielectric constants of about $39\;{\sim}\;58$. The high dielectric loss of the films deposited at $150\;^{\circ}C$ compared with films deposited at $25\;^{\circ}C$ was attributed to the defects existing at interface between the films and copper electrode by an oxidation of copper bottom electrode. The leakage current densities and breakdown voltages in 200 nm thick-BMN and BZN films deposited at $150\;^{\circ}C$ are approximately $2.5\;{\times}\;10^{-8}\;A/cm^2$ at 3 V and above 10 V, respectively. Both BZN and BMN films are considered to be suitable materials for embedded capacitor applications.

Formation Behavior of Anodic Oxide Films on Al 6061 Alloy in Sulfuric Acid Solution (황산 용액에서 Al6061 합금의 아노다이징 피막 형성거동)

  • Moon, Sungmo;Jeong, Kihun;Lim, Sugun
    • Journal of Surface Science and Engineering
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    • v.51 no.6
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    • pp.393-399
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    • 2018
  • Formation behavior of aluminum anodic oxide (AAO) films on Al6061 alloy was studied in view of thickness, morphology and defects in the anodic films in 20 vol.% sulfuric acid solution at a constant current density of $40mA/cm^2$, using voltage-time curve, observation of anodized specimen colors and surface and cross-sectional morphologies of anodic films with anodization time. With increasing anodizing time, voltage for film formation increased exponentially after about 12 min and its increasing rate decreased after 25 min, followed by a rapid decrease of the voltage after about 28 min. Surface color of anodized specimen became darker with increasing anodizing time up to about 20 min, while it appeared to be brighter with increasing anodizing time after 20 min. The darkened and brightened surfaces with anodizing time are attributed to an increase in thickness of porous anodic oxide film and a chemical damage of the films due to heat generated by increased resistance of the film, respectively. Cross-sectional observation of AAO films revealed the formation of defects of crack shape at the metal/oxide interface after 15 min which prevents the growth of AAO films. Width and length of the crack-like defect increased with anodizing time up to 25 min of anodizing, and finally the outer part of AAO films was partly dissolved or detached after 30 min of anodizing, resulting in non-uniform surface structures of the AAO films.

Bonding Temperature Effects of Robust Ag Sinter Joints in Air without Pressure within 10 Minutes for Use in Power Module Packaging

  • Kim, Dongjin;Kim, Seoah;Kim, Min-Su
    • Journal of the Microelectronics and Packaging Society
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    • v.29 no.4
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    • pp.41-47
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    • 2022
  • Ag sintering technologies have received great attention as it was applied to the inverter of Tesla's electric vehicle Model III. Ag sinter bonding technology has advantages in heat dissipation design as well as high-temperature stability due to the intrinsic properties of the material, so it is useful for practical use of SiC and GaN devices. This study was carried out to understand the sinter joining temperature effect on the robust Ag sintered joints in air without pressure within 10 min. Electroplated Ag finished Cu dies (3 mm × 3 mm × 2 mm) and substrates (10 mm × 10 mm × 2 mm) were introduced, respectively, and nano Ag paste was applied as a bonding material. The sinter joining process was performed without pressure in air with the bonding temperature as a variable of 175 ℃, 200 ℃, 225 ℃, and 250 ℃. As results, the bonding temperature of 175 ℃ caused 13.21 MPa of die shear strength, and when the bonding temperature was raised to 200 ℃, the bonding strength increased by 157% to 33.99 MPa. When the bonding temperature was increased to 225 ℃, the bonding strength of 46.54 MPa increased by about 37% compared to that of 200 ℃, and even at a bonding temperature of 250 ℃, the bonding strength exceeded 50 MPa. The bonding strength of Ag sinter joints was directly influenced by changes in the necking thickness and interfacial connection ratio. In addition, developments in the morphologies of the joint interface and porous structure have a significant effect on displacement. This study is systematically discussed on the relationship between processing temperatures and bonding strength of Ag sinter joints.

Morphology Controlled Synthesis of γ-Al2O3 Nano-Crystallites in Al@Al2O3 Core-Shell Micro-Architectures by Interfacial Hydrothermal Reactions of Al Metal Substrates

  • Dohyeon Han;Doohwan Lee
    • Nanomaterials
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    • v.11 no.2
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    • pp.310-322
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    • 2021
  • Fine control of morphology and exposed crystal facets of porous γ-Al2O3 is of significant importance in many application areas such as functional nanomaterials and heterogeneous catalysts. Herein, a morphology controlled in situ synthesis of Al@Al2O3 core-shell architecture consisting of an Al metal core and a porous γ-Al2O3 shell is explored based on interfacial hydrothermal reactions of an Al metal substrate in aqueous solutions of inorganic anions. It was found that the morphology and structure of boehmite (γ-AlOOH) nano-crystallites grown at the Al-metal/solution interface exhibit significant dependence on temperature, type of inorganic anions (Cl-, NO3-, and SO42-), and acid-base environment of the synthesis solution. Different extents of the electrostatic interactions between the protonated hydroxyl groups on (010) and (001) facets of γ-AlOOH and the inorganic anions (Cl-, NO3-, SO42-) appear to result in the preferential growth of γ-AlOOH toward specific crystallographic directions due to the selective capping of the facets by adsorption of the anions. It is hypothesized that the unique Al@Al2O3 core-shell architecture with controlled morphology and exposed crystal-facets of the γ-Al2O3 shell can provide significant intrinsic catalytic properties with enhanced heat and mass transport to heterogeneous catalysts for applications in many thermochemical reaction processes. The direct fabrication of γ-Al2O3 nano-crystallites from Al metal substrate with in-situ modulation of their morphologies and structures into 1D, 2D, and 3D nano-architectures explored in this work is unique and can offer significant opportunities over the conventional methods.

Fabrication of Poly(methyl methacrylate) Beads Monolayer Using Rod-coater and Effects of Solvents, Surfactants and Plasma Treatment on Monolayer Structure (Rod 코팅을 이용한 Poly(methyl methacrylate) 비드의 단일층 형성 및 단일층 구조에 미치는 용매, 계면활성제, 플라즈마 처리의 영향)

  • Kim, Da Hye;Ham, Dong Seok;Lee, Jae-Heung;Huh, Kang Moo;Cho, Seong-Keun
    • Journal of Adhesion and Interface
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    • v.20 no.1
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    • pp.1-8
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    • 2019
  • Fabrication of monolayer is important method for enhancing physical and chemical characteristics such as light shielding and antireflection while maintaining thin film properties. In previous studies, monolayers were fabricated by various methods on small substrates, but processes were complicated and difficult to form monolayers with large area. We used rod coating equipment with a small amount of coating liquid to form a HCP (hexagonal closed packing) coating of PMMA beads on PET(poly(ethylene terephthalate)) substrate with $20cm{\times}20cm$ size. We observed that changes in morphologies of monolayers by using the solvents with different boiling points and vapor pressures, by adapting surfactants on particles and by applying plasma treatment on substrates. The coverage was increased by 20% by optimizing the coating conditions including meniscus of beads, control of the attraction - repulsion forces and surface energy. This result can potentially be applied to optical films and sensors because it is possible to make a uniform and large-scale monolayer in a simple and rapid manner when it is compared to the methods in previous studies.

Formation of the $CoSi_{2}$ using Co/Zr Bilayer on the Amorphous and the Single Crystalline Si Substrates (단결정과 비정질 Si 기판에서 Co/Zr 이중층을 이용한 $CoSi_{2}$ 형성)

  • Kim, Dong-Wook;Jeon, Hyeong-Tag
    • Korean Journal of Materials Research
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    • v.8 no.7
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    • pp.621-627
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    • 1998
  • The formation of Co-silicide between Co/Zr bilayer on the amorphous and crystalline Si substrates has been investigated. The films of Zr(50$\AA$) and Co(l50$\AA$) were deposited with e-beam evaporation system and were heattreated with the rapid thermal annealing system at the temperatures between 50$0^{\circ}C$ and 80$0^{\circ}C$ with 10$0^{\circ}C$ increments for 30 seconds. The phase identification of Co-silicide was carried out by XRD and the chemical analysis was examined by AES and RBS. The interface morphologies of Co/Zr bilayer films were investigated by cross sectional TEM and HRTEM. $CoSi_2$ was formed epitaxially on the crystalline Si substrate above $700^{\circ}C$ while polycrystalline $CoSi_2$ was grown on the amorphous Si substrate. The formation temperature of Co-silicide on the amorphous Si substrate was about 100 C lower than that on the crystalline Si. The COzSi phase was not identified on the both Si substrates. The formation temperature of first phase of Co-silicide on ColZr bilayer was higher than that on Co mono layer. CoSizlayer formed on the amorphous Si substrate exhibits better uniformity compared to the CoSiz formed on the crystalline substrate. The sheet resistance of CoSiz layer on crystalline Si was lower than that on the amorphous Si at high temperatures.tures.

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