• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.914-920
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• 2000

When the charge-trap type SONOS(polysilicon-oxide-nitride-oxide-semiconductor) cells are used to flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM(Nonvolatile Semiconductor Memory) cells were fabricated using 0.35 ㎛ standard memory cell embedded logic process including the ONO cell process, based on retrograde twin-well, single-poly, single metal CMOS(Complementary Metal Oxide Semiconductor) process. The thickness of ONO triple-dielectric for the memory cell is tunnel oxide of 24 $\AA$, nitride of 74 $\AA$, blocking oxide of 25 $\AA$, respectively. The program mode(V$\_$g/=7, 8, 9 V, V$\_$s/=V$\_$d/=-3 V, V$\_$b/=floating) and the erase mode(V$\_$g/=-4, -5, -6 V, V$\_$s/=V$\_$d/=floating, V$\_$b/=3 V) by MFN(Modified Fowler-Nordheim) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation(ΔV$\_$th/, S, G$\_$m/) characteristics than channel MFN tunneling operation. Also, the program inhibit conditins of unselected cell for separated source lines NOR-type flash memory application were investigated. we demonstrated that the phenomenon of the program disturb did not occur at source/drain voltage of 1 V∼12 V and gate voltage of -8 V∼4 V.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.486-490
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• 2014

$Al_2O_3$ films on silicon carbide were fabricated by Aerosol deposition with annealing temperature at $800^{\circ}C$ and $1,000^{\circ}C$. The effect of thermal treatment on physical properties of $Al_2O_3$ thin films has been investigated by XRD (X-ray diffraction), AFM (atomic force microscope), SEM (scanning electron microscope), and AES (auger electron spectroscopy). Also electrical properties have been investigated by Keithley 4,200 semiconductor parameter analyzer to explain the interface trapped charge density ($D_{it}$), flatband voltage ($V_{FB}$) and leakage current ($I_o$). $Al_2O_3$ films become crystallized with increasing temperature by calculating full width at half maximum (FWHM) of diffraction peaks, also surface morphology is observed by topography measurement in non-contact mode AFM. $D_{it}$ was $2.26{\times}10^{-12}eV^{-1}.cm^{-2}$ at $800^{\circ}C$ annealed sample, which is the lowest value in all samples. Also the sample annealed at $800^{\circ}C$ has the lowest leakage current of $4.89{\times}10^{-13}A$.

• 한국산학기술학회논문지
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• 제12권2호
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• pp.920-926
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• 2011

본 논문에서는 신재생에너지 활용을 위한 다중 추적식 태양광 발전 감성형 LED 가로등을 제안한다. 제안하는 가로등 시스템은 다중 추적방식의 태양광 추적기능을 갖추고 있고 감성형 고품위 LED 램프와 제어회로를 사용하여 센서를 통해 입력되는 온도 및 습도를 기반으로 최대의 일조량을 받을 수 있도록 하였다. 신재생에너지 활용의 핵심 요소인 효율적인 축전지 활용을 위해 충방전 컨트롤러를 개발하였고 원격모니터링 기능 및 제어기능도 구현 하였다. 제안하는 가로등 시스템은 기존 기술에 비하여 추적 동작이 우수하고 에너지효율이 향상되었으며 기존에 개발되지 않았던 추적식 태양광 발전 시스템과 감성형 LED를 결합함으로써 차세대 가로등 시스템의 모델로서의 활용될 수 있게 하였다.

• 방사성폐기물학회지
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• 제16권2호
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• pp.173-182
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• 2018

원자력 시설 내 방사능을 포함하는 물질의 제염을 위한 방법 중 거품제염은 2차폐기기물의 양을 저감시킬 수 있는 장점을 지니고 있다. 본 연구에서는 거품안정성을 증가시킬 수 있는 실리카 나노입자를 여러가지 조건을 달리하여 합성하였다. Cetyltrimethylammonium bromide(CTAB)는 거품제염제의 거품안정성에 많은 영향을 나타내었다. 이러한 거품안정성이 향상된 이유는 제염제 내에 공기와 용액간의 계면에서 실리카 나노입자와 계면활성제의 반응으로 생각된다. 또한, CTAB는 실리카나노입자의 분리특성에서도 우수한 성능을 나타냈었다. 실리카 나노입자 분리시, CTAB의 탄화수소기에 의한 소수성과 전하중성화에 의해서 실리카 나노입자의 응집현상을 향상시켰다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.31-32
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• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

• 한국진공학회지
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• 제18권4호
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• pp.281-287
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• 2009

본 연구에서는 고진공 조건에서 열기화 증착 방법으로 산화막으로 덮인 Mg 리본(MgO/Mg) 위에 Pd을 증착하였다. 고진공 속에서 만든 시료의 전자구조를 in-situ X-선 광전자 분광법 (XPS)을 통하여 분석하였고, 분석 후, FE-SEM을 통해 증착량의 증가에 따른 표면구조의 변화를 확인하였다. Pd 증착량이 1 나노미터 (nm) 이하인 경우에는 증착량 증가에 따른 Pd 나노입자 크기의 증가를 확인하였으며, Pd을 1 nm 이상의 두께로 증착시킨 경우에는 Pd 입자들의 뭉침에 의해 얇은 필름이 형성됨을 관찰하였다. Pd과 기판사이의 전하이동에 의하여 산화물/금속 계면의 Pd 원자들은 부분적으로 양전하를 띔을 확인하였다.

• 대한금속재료학회지
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• 제50권2호
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• pp.159-163
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• 2012

A TCO-less ruthenium (Ru) catalytic layer on glass substrate instead of conventional Ru/TCO/ glass substrate was assessed as counter electrode (CE) material in dye sensitized solar cells (DSSCs) by examining the effect of the Ru thickness on the DSSC performance. Ru films with different thicknesses (34, 46, 69, and 90 nm) were deposited by atomic layer deposition (ALD) on glass substrates to replace both existing catalyst and electrode layer. In order to make our comparison, we also prepared an Ru catalytic layer by a similar method on FTO/glass substrate. Finally, we prepared the $0.45cm^2$ DSSC device the properties of the DSSCs were examined by cyclic voltammetry (CV), impedance spectroscopy (EIS), and current-voltage (I-V) method. CV measurements revealed an increase in catalytic activity with increasing film thickness. The charge transfer resistance at the interface between the electrolyte and Rudecreased with increasing Ru thickness. I-V results showed that the energy conversion efficiency increased up to 1.96%. Our results imply that TCO-less Ru/glass might perform as both catalyst and electrode layer when it is used in counter electrodes in DSSCs.

• 대한금속재료학회지
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• 제50권3호
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• pp.243-247
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• 2012

A ruthenium (Ru) catalytic layer and a conventional Pt layer were assessed as counter electrodes (CE) for dye sensitized solar cells (DSSCs). Ru films with different thicknesses of 34, 46, and 90 nm were deposited by atomic layer deposition (ALD). Pt layers with the same thicknesses were prepared by sputtering. $0.45cm^2$ DSSCs were prepared and their properties were characterized by FE-SEM, cyclic voltammetry (CV), impedance spectroscopy (EIS), and current-voltage (I-V). FE-SEM revealed that the crystallized Ru films and Pt films had been deposited quite conformally. CV showed that the catalytic activity of Pt was much greater than that of Ru. In addition, although the catalytic activity of Pt did not depend on the thickness, that of Ru showed an increase with increasing thickness. Impedance analysis revealed high charge transfer resistance at the Ru interface and a decrease with increasing Ru thickness, whereas Pt showed low resistance with no thickness dependence. Despite the relatively small catalytic activity of Ru, the I-V result revealed the average energy conversion efficiency of Ru and Pt to be 2.98% and 6.57%, respectively. These results suggest that Ru can be used as counter electrodes in DSSCs due to its extremely low temperature process compatibility.

• Geomechanics and Engineering
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• 제2권1호
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• pp.1-18
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• 2010

The analysis of structure response and design of buried structures subjected to dynamic destructive loads have been receiving increasing interest due to recent severe damage caused by strong earthquakes and terrorist attacks. For a comprehensive design of buried structures subjected to blast loads to be conducted, the whole system behaviour including simulation of the explosion, propagation of shock waves through the soil medium, the interaction of the soil with the buried structure and the structure response needs to be simulated in a single model. Such a model will enable more realistic simulation of the fundamental physical behaviour. This paper presents a complete model simulating the whole system using the finite element package ABAQUS/Explicit. The Arbitrary Lagrange Euler Coupling formulation is used to model the explosive charge and the soil region near the explosion to eliminate the distortion of the mesh under high deformation, while the conventional finite element method is used to model the rest of the system. The elasto-plastic Drucker-Prager Cap model is used to model the soil behaviour. The explosion process is simulated using the Jones-Wilkens-Lee equation of state. The Concrete Damage Plasticity model is used to simulate the behaviour of concrete with the reinforcement considered as an elasto-plastic material. The contact interface between soil and structure is simulated using the general Mohr-Coulomb friction concept, which allows for sliding, separation and rebound between the buried structure surface and the surrounding soil. The behaviour of the whole system is evaluated using a numerical example which shows that the proposed model is capable of producing a realistic simulation of the physical system behaviour in a smooth numerical process.

• 한국컴퓨터정보학회논문지
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• 제7권3호
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• pp.23-29
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• 2002

지리정보체계(GIS)의 자료처리 설계는 분석절차와 더불어 효율적인 방법이 요구되는 과정이다. 본 연구는 3계층 기반의 객체지향기법을 적용한 도형 사용자 접속 환경의 원도우용 체계로서 조건에 따른 도로의 노선선정을 제시할 수 있도록 사용과 유지관리를 손쉽게 하였다. 자료계층은 지오미디어와 응용계층과의 상호 자료 교환, 추출 및 보존을 위한 클래스를 담당하였다. 응용계층에는 시ㆍ종점간의 노선선정에 필요한 제반조건을 고려하여 노선선정 알고리즘을 적용하였으며, 자료 운용, 도로조건, 영향권, 클로소이드 및 계층분석과정 등을 모듈식으로 추가하여 새로운 조건별에 따라 비교노선을 선정할 수 있도록 하였다. 사용자 계층에는 응용계층에 취득된 자료들을 표현할 수 있도록 하였다. 따라서 3계층 기반구조를 이용하여 GIS의 자료 처리의 설계구현에 그 효율성을 제시할 수 있었다.