• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1958_1959
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• 2009

This paper describes an MRE(Monitoring and Reconfiguration Electronics) which is in charge of SCU(Spacecraft Computer Unit) hardware failure monitoring as well as of protecting the satellite against system failures. To achieve it, MRE is designed that it is an independent function with respect to the rest of the SCU, that is, care is taken into account in order to minimize the interface(the failure propagation) between the MRE and the other SCU functions.

• Journal of the Korean Society of Visualization
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• v.3 no.2
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• pp.45-50
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• 2005

Electro-osmotic flow (EOF) instability in a microchannel has been experimentally investigated using a micro-PIV system. The micro-PIV system consisting of a two-head Nd:Yag laser and cooled CCD camera was used to measure instantaneous velocity fields and vorticity contours of the EOF instability in a T-shape glass microchannel. The electrokinetic flow instability occurs in the presence of electric conductivity gradients. Charge accumulation at the interface of conductivity gradients leads to electric body forces, driving the coupled flow and electric field into an unstable dynamics. The threshold electric field above which the flow becomes unstable and rapid mixing occurs is about 1000V/cm. As the electric field increases, the flow pattern becomes unstable and vortical motion is enhanced. This kind of instability is a key factor limiting the robust performance of complex electrokinetic bio-analytical devices, but can also be used for rapid mixing and effective flow control fer micro-scale bio-chips.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.193-195
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• 1988

The native oxide films were thermally and anodically formed on the n-GaP substrates grown by SSD method and measured this oxide thickness and the chemical composition and the electrical properties with formation condition. The chemical composition of themally oxidized GaP film was composed of mostly $GaPO_4$ at temperature below $800^{\circ}C$ and mostly $\beta-Ga_{2}O_{3}$ above $800^{\circ}C$. But The chemical composition of anodically oxidized GaPfilm was composed of the mixture of $Ga_{2}O_{3}$ and $P_{2}O_{5}$. The barrier height of Al/oxide/n-Gap which was formed at $700^{\circ}C$ by thermal oxidation method were 1.10eV, 1.03eV in Current-Voltage measurement. Interface charge density were $4{\times}10^{12}q(C/cm^2)$ and $3{\times}10^{12}q(C/cm^2)$ in Capacitance-Voltage measurement respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.303-306
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• 2001

Composite insulating materials used in outdoor high voltage equipment are required to have high electric performance because of the miniaturization. The frequence dependence of the permittivity and the loss tangent have important information. In this paper we describe the frequency dependence of the permittivity and the loss tangent for epoxy resin filled with silica and the influence of filler shape on the dielectric properties. The increment of tan $\delta$ in the low frequency region is caused by the increment of both of the electrical conductivity and the polarization due to the shape of filler and water sbsorbed in and near the interface between the fillers and resins. Result of charge current and discharge measure, electric conduction increased according to voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.92-95
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• 2001

The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. First of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. The breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised and the electric field is concentrated. In the case of filled specimens with treating silane, the breakdown strength become much higher Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1[%], the applied field value needed to be under 21.5 [Mv/cm].

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.5
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• pp.709-715
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• 1990

SiO2 films were nitrided by tungsten-halogen heated rapid thermal annealing in ammonia gas at temperatures of 900-1100\ulcorner for 15-180sec. The nitroxide films were analyzed using Auger electron spectroscopy. MIS caapcitors were fabricated using these films as gate insulators. I-V and C-V characteristics of MIS capacitors were investigated. The AES depth profiles of nitroxide film show that the nitrogen rich layer is, at the early stage of nitridation, formed at the surface of nitroxide film and near the interface between nitroxide and silicon. Nitridation of SiO2 makes the film have a larger effective average refractive index. The thermal nitridation of SiO2 on silicon causes the flatband voltage shift due to the change of the fixed charge density. It is found that the dominant conduction mechanism in nitroxide is Fowler-Nordheim tunneling. Rapid thermal nitridation of 200\ulcornerSiO2 on silicon results in an improvement in the dielectric breakdown electric field.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.1
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• pp.25-32
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• 1992

In this paper, a method for the calculation of 2-dimensional interconnection capacitance for a multi-interconnection signal line in a dielectric region is presented. The numbers of dielectric layers and signal lines are arbitrary. To calculate the capacitance parameter, Boundary Element Method is used, and the dielectric interface and the surface of lines are divided into subsections. The advantages of BEM are small CPU-time and more exact solution due to the directly calculated values of capacitance only at the boundary of domain.It is adopted that the surface capacitance of each subsection assumed constant. The solution of surface charge density and capacitance parameter are calculated in a given domain.

• Korean Journal of Optics and Photonics
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• v.15 no.1
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• pp.51-55
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• 2004

Surface plasmons (SPs) are charge density oscillations that propagate along an interface between a dielectric and metal. In this paper, the electric field of SPs and the intereference of two SPs are observed by using Near-field Scanning Optical Microscope (NSOM). The excitation condition of SPs is changed as the optical tip approaches the metal surface, because the excitation condition of SPs is very sensitive to surface structures. To measure the microscope field of SPs, the distance between metal surface and optical tip must contain a specific interval.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.50 no.6
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• pp.259-264
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• 2001

The electric utility industry around the world is undergoing a revolutionary transition from vertically integrated monopoly structures to a competitive structures. Competition in an open transmission access(OTA) makes the market participants access easily the transmission system in a non-discriminatory and equitable manner. The competitions of suppliers and customers make the electric market price change every hour. This paper presents a web program in the internet environment with a function of optimal power flow(OPF) calculation. The Web program gives the nodal marginal cost and the congestion charge using the shadow prices resulted from OPF. This web program is realized by a Perl and JAVA languages, and using the common gateway interface(CGI).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.414-419
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• 2002

The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. First of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. The breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised and the electric field is concentrated. In the case of (idled specimens with treating silane, the breakdown strength become much higher Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1[%], the applied field value needed to be under 21.5 MV/cm.