• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.05a
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• pp.259-262
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• 2009

IEC 61850 based substation automation system mainly consists of human machine interface and a various of IEDs in charge of protective and control functions of the substation. Both of them should require the performance verification of IEC 61850 communication services because their communication relation is the same as client and server throughout the digital network. This paper shows a research result on the testing method of basic communication interface of the IEC 61850 based client, which was implemented by the analysis of real communication between HMI and IED of IEC 61850 based substation automation system and refereed to IED IEC 61850 conformance test procedures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.232-233
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• 2005

The Surface of semi-conductive silicone rubber was treated by oxygen plasma to improve adhesion and electric performance in joints between insulating and semi-conductive silicone materials. Surface characterizations were assessed using contact angle measurement and Fourier transform infrared spectroscope (FTIR). Adhesion level was understood from T-peel tests between plasma treated semi-conductive and insulating material. Electrical breakdown strength was measured to understand the charge of electrical performance. From the results, the oxygen plasma treatment produces a significant increase in function group of containing oxygen which can be mainly ascribed to the creation of carbonyl groups on the silicone surface from the strength were improved. Therefore it is concluded then plasma treatment leads to decrease voids originating form poor adhesive, and the improve the adhesion in silicone interface. So we could obtain higher electrical design level of silicone material used for electrical apparatus using oxygen plasma treatment.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.593-596
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• 1998

Effects of current re-stress after anneal on leakage current and trapped charges in oxides are investigated. Current stress on 6 nm thick oxide has generated mostly positive traps within the oxide resulting in leakage currents. The interface states generated are several orders of magnitude smaller, determined by C-V and charge pumping method. Annealing has eliminated only the charged traps not the neutral traps, thus the leakage current and trap density are increased when the oxides are re-stressed.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1990.10a
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• pp.53-56
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• 1990

When oil flows and rubs against various materials in transformer, electrostatic charges are separated at the interface of the oil and the solid material. Using simplified model transformer, authors investigated the basic characteristics of the streaming electrifica-tion which is caused by forced oil circulation. As the result of the study, it was concluded that the electrostatic charge distribution on test pipe of the transformer showed larger leakage current at the inlet and the outlet.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.34C no.4
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• pp.16-25
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• 1997

This paper shows a SDRAM opeating in 200MHz clock cycle which it use data interleave and pipelining for high speed operation. We proposed NdC (Negative DEaly circuit) to improve clock to access time(tAC) characteristics, also we proposed low power WL(wordline)driver circit and high efficiency VPP charge-pump circit. Our all circuits has been fabricated using 0.4um CMOS process, and the measured maximum speed is 200Mbytes/s in LvTTL interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.368.1-368.1
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• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1311-1313
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• 1997

We describe the working principle, the design, and the characteristics of two-chip integrated humidity sensor. The sensing element was manufactured using polyimide. The interface circuits were developed based on a charge redistribution between capacitors. The sensor and signal conditioning chips were packaged together in the same package. The sensor showed excellent linearity over a wide range of relative humidity.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.92-92
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• 2008

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.6
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• pp.203-211
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• 1984

MOS silicon solar cells have been developed using the fixed (interface) charge inherent to thermally oxidized silicon to induce an n-type inversion layer in 1-10 ohm-cm p-type silicon. Higher collection efficiencies are predicted than for diffused junction cells. Without special precautions a conversion efficiency of 14.2% is obtained. A MOS silicon solar cell is described in which an inversion layer forms the active area which is then contacted by means of a MOS grid. The highest efficiency is obtained when the resistivity of the substrate is high.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.320.1-320.1
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• 2013

We have investigated the effect of surface passivation for crystalline silicon solar cell using ozone-based atomic layer deposited (ALD) $Al_2O_3$. We examined passivation properties such as uniformity, carrier lifetime, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using microwave photoconductance decay (PCD). Ozone-based ALD $Al_2O_3$ film shows the best carrier lifetime at lower deposition temperature than $H_2O$-based ALD.