• Title/Summary/Keyword: interface charge

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Growth and Characteristics of NO/$N_2$O Oxynitrided and Reoxidized Gate Dielectrics for Charge Trapping NVSMs (산화막의 NO/$N_2$O 질화와 재산화 공정을 이용한 전하트랩형 NVSM용 게이트 유전막의 성장과 특성)

  • 윤성필;이상은;김선주;서광열;이상배
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.9-12
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    • 1998
  • Film characteristics of thin reoxidized nitrided oxides were investigated by SIMS analysis and C-V method in order to use the gate dielectric for charge-trap type NVSMs instead of ONO stacked layers. Nitric oxide(NO) annealed film has the nitrogen content sharply peaked at the Si-SiO$_2$ interface, while it is broad for nitrous oxide($N_2$O) ambient. The nitrogen peak concentration increased with anneal temperature and time. The position of nitrogen content in the oxide layer was due to be precisely controlled. For the films annealed NO ambient at 80$0^{\circ}C$ for 30min. followed by reoxidized at 85$0^{\circ}C$, the maximum memory window of 3.5V was obtained and the program condition was +12V, 1msec for write and -l3V, 1msec for erase.

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The variation of C-V characteristics of thermal oxide grown on SiC wafer with the electrode formation condition (SiC 열산화막의 Electrode형성조건에 따른 C-V특성 변화)

  • Kang, M.J.;Bahng, W.;Song, G.H.;Kim, N.K.;Kim, S.C.;Seo, K.S.;Kim, H.W.;Kim, E.D.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.354-357
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    • 2002
  • Thermally grown gate oxide on 4H-SiC wafer was investigated. The oxide layers were grown at l150$^{\circ}C$ varying the carrier gas and post activation annealing conditions. Capacitance-Voltage(C-V) characteristic curves were obtained and compared using various gate electrode such as Al, Ni and poly-Si. The interface trap density can be reduced by using post oxidation annealing process in Ar atmosphere. All of the samples which were not performed a post oxidation annealing process show negative oxide effective charge. The negative oxide effective charges may come from oxygen radical. After the post oxidation annealing, the oxygen radicals fixed and the effective oxide charge become positive. The effective oxide charge is negative even in the annealed sample when we use poly silicon gate. Poly silicon layer was dope by POCl$_3$ process. The oxide layer may be affected by P ions in poly silicon layer due to the high temperature of the POCl$_3$ doping process.

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AC Impedance Study of Hydrogen Oxidation and Reduction at Pd/Nafion Interface

  • Song, Seong-Min;Koo, Il-Gyo;Lee, Woong-Moo
    • Transactions of the Korean hydrogen and new energy society
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    • v.12 no.3
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    • pp.231-238
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    • 2001
  • Electrocatalytic activity of palladium for hydrogen oxidation and reduction was studied using AC impedance method. The system under study was arranged in electrolytic mode consisting of Pd electrode under study, Pt counter electrode and Nafion electrolyte between them. Two types of Pd electrodes were used - carbon-supported Pd (Pd/C) and Pd foil electrode. Pd/C anode contacting pure hydrogen showed a steady decrease of charge transfer resistance with the increase of anodic overpotential, which is an opposite trend to that found with Pd foil anode. But Pd foil cathode also exhibited a decrease of the resistance with the increase of cathodic overpotential. The relationship between imposition of overpotential and subsequent change of the charge transfer resistance is determined by the ratio of the rate of faradaic process to the rate of mass transportation; if mass transfer limitation holds, increase of overpotential accompanies the increase of charge transfer resistance. Regardless of the physical type of Pd electrode, the anode contacting hydrogen/oxygen gas mixture did not reveal any independent arc originated from local anodic oxygen reduction.

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A Study on Photoreceptor by Using the Effect of Additives

  • Yu, Jin;Kim, Yeong Sun;Yu, Guk Hyeon
    • Bulletin of the Korean Chemical Society
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    • v.22 no.7
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    • pp.709-715
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    • 2001
  • We have been studied photosensitization mechanism's additive effect, of perylene 3,4,9,10-tetracarboxyl-diimide and X-phthalocyanine (charge generation materials), using the photochemical and photoelectrochemical approach. It was found that the photoreceptor on the excited state reacts with metal oxide, which creates the charge transfer on the interface of SnO2/electrolyte. In the electrode (X5P1) made of five X-phthalocyanine and single perylene 3,4,9,10-tetracarboxyldiimide layers, the cathodic photocurrent of X-phthalocyanine in the 400-600 nm region was increased by the addition of perylene 3,4,9,10-tetracarboxyldiimide. The maximum wavelength of fluorescence of perylene 3,4,9,10-tetracarboxyldiimide showed no dependence on the temperature. The addition of 4-dibenzylamino-2-methylbenzaldehyde diphenylhydrazone known as charge transport material was represented as decreasing photocurrent for X-phthalocyanine and perylene 3,4,9,10-tetracarboxyldiimide, respectively. In the electrode (X1P1) made of single X-phthalocyanine and single perylene 3,4,9,10-tetracarboxyldiimide layers, an anodic photocurrent of about 10.5 nA was generated by addition of hydroquinone at 550 nm. And the characteristic of photoinduced discharge was shown to decrease by a factor of 5 and the speed of dark decay was increased by a factor of 1.2.

Raman Spectroscopy Study of Diffusion of Water into Graphene/$SiO_2$ Interface

  • Lee, Dae-Eung;Ryu, Sun-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.388-388
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    • 2012
  • 친수성 기판과 소수성 그래핀(graphene) 계면에서의 물의 확산 현상은 호기심을 자극할 뿐만 아니라 그래핀 소자의 특성을 좌우하는 전하도핑(charge doping) 현상을 이해하는데 중요한 모델이 된다. 본 연구에서는 라만 분광법을 이용하여 그래핀/$SiO_2$ 계면에서의 물의 확산 현상을 탐구하였다. 열처리된 그래핀은 기판과의 상호작용에 의해 높은 밀도의 정공(electron hole)으로 도핑되어 있기 때문에, 물이 계면을 통해 확산하게 되면 정공의 밀도를 감소시킬 수 있게 된다. 본 실험에서는 이차원 라만 분광법을 통해 물 속에 담겨진 그래핀의 정공 밀도의 공간적인 분포를 확산 시간에 따라 조사하였다. 물의 확산은 시료에 따라 수 시간에서 수 일의 시간대에 걸쳐 그래핀 가장자리에서 중앙으로 이루어진다는 사실을 확인하였다. 또한 물의 계면확산으로 인해서 전하 밀도가 감소한다는 사실은 열처리된 그래핀의 정공 도핑을 유발하는 산소가 그래핀/$SiO_2$ 계면에 존재한다는 것을 증명한다.

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A Study on the Streaming Electrification in the Super-high Voltage Model Transformer (초고압 대용량 모델변압기의 유동대전 현상에 관한 연구(전압무인가))

  • 이덕출;박재윤
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.40 no.6
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    • pp.619-625
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    • 1991
  • Phenomena of streaming electrification of insulting oil(T.O) is studied where the oil is contacted with solid insulating materials when it is pumped through a circulating system in a large power transformer. The leakage current, the electrical potential at the neutral terminal point of the transformer and the surface electrical potential of the oil are investigated. And the leakage current from the neutral terminal point is measured as a function of a bias polarity applied to a transformer case to investigate the polarty of ion which is absorbed in the case at the interface between the case and oil. As a result, it is found that insulating materials, and it is suggested that the leakage current is the sum of the relaxation current by positive charge from insulating oil to the neutral terminal point and by electrification current from negative charge electrified by the contact with solid insulating materials.

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Pressure and temperature change in air cylinders in charged or discharged case

  • Takeuchi, Masaaki;Kagawa, Toshiharu;Nomura, Naoki
    • 제어로봇시스템학회:학술대회논문집
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    • 1993.10b
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    • pp.298-301
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    • 1993
  • In pneumatic systems the temperature changes during operation owing to air compression or expansion, friction of air movement and friction between solid interface. The temperature change usually ha undesirable influence on process. To attain higher quality of pneumatics, studies in thermo-fluid dynamics is needed. This paper presents experimental results anti theoretical analysis on the temperature change by air charge and discharge to cylinders, which has no piston yet. The temperature increase by charge shows a strong, dependence on axial location along the cylinder, which is proved in theoretical analysis. The temperature decreases by discharge shows rather uniform in the cylinder, which is also proved by theory.

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LABORATORY TEST OF CCD #1 IN BOAO (보현산 천문대 1번 CCD카메라의 실험실 테스트)

  • Park, Byeong-Gon;Cheon, Mu-Yeong;Kim, Seung-Ri
    • Publications of The Korean Astronomical Society
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    • v.10 no.1
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    • pp.67-78
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    • 1995
  • An introduction to the first CCD camera system in Bohyunsan Optica1 Astronomy Observatory(CCD#l) is presented. The CCD camera adopts modular dewar design of IfA(Institute for Astronomy at Hawaii University) and SDSU(San Diego State University) general purpose CCD controller. The user interface is based on IfA design of easy-to-use QUI program running on the NeXT workstation. The characteristics of the CCD#l including Gain, Charge Transfer Efficiency, rms Read-Out Noise, Linearity and Dynamic range is tested and discussed. The CCD#l shows 6.4 electrons RON and gain of 3.49 electrons per ADU, and the optimization resulted in about 27 seconds readout time guaranteeing charge transfer efficiency of 0.99999 for both direction. Linearity test shows that non-linear coefficient is $6{\times}10^{-7}$ in the range of 0 to 30,000 ADU.

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A Study on Electric Properties of Epoxy Resin on Filler Shape (충전제 형상이 미치는 에폭시 수지의 전기적 특성에 관한 연구)

  • 이성일
    • Journal of the Korea Safety Management & Science
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    • v.3 no.3
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    • pp.231-241
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    • 2001
  • The epoxy resin materials used in outdoor high voltage equipments are required to have the high electric performance because of the miniaturization. The frequence dependence of the permittivity and the loss tangent have important information. In this paper we describe the frequency dependence of the permittivity and the loss tangent for epoxy resin filled with silica and the influence of filler shapes on the dielectric properties. The increment of tan $\delta$ in the low frequency region is caused by the increment of both the electrical conductivity and the polarization due to the shape of filler and the water absorbed in and near the interface between fillers and resins. The result of charge current and discharge measure, electric conduction is increased according to voltage.

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Study On Development of Fast Image Detector System (고속 영상 검지기 시스템 개발에 관한 연구)

  • 임태현;이종민;김용득
    • Proceedings of the IEEK Conference
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    • 2003.11a
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    • pp.241-244
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    • 2003
  • Nowadays image processing is very useful for some field of traffic applications. The one reason is we can construct the system in a low price, the other is the improvement of hardware processing power, it can be more fast to processing the data. In this study, I propose the traffic monitoring system that implement on the embedded system environment. The whole system consists of two main part, one is host controller board, the other is image processing board. The part of host controller board take charge of control the total system, interface of external environment. and OSD(On screen display). The part of image processing board takes charge of image input and output using video encoder and decoder, image classification and memory control of using FPGA, control of mouse signal. And finally, fer stable operation of host controller board, uC/OS-II operating system is ported on the board.

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