• 반도체디스플레이기술학회지
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• 제12권3호
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• pp.41-46
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• 2013

Efficient and inexpensive solar cells are necessary for photo-voltaic to be widely adopted for mainstream electricity generation. For this to occur, the recombination losses of charge carriers (i.e. electrons or holes) must be minimized using a surface passivation technique suitable for manufacturing. Recently it has been shown that aluminum oxide thin films are negatively charged dielectrics that provide excellent surface passivation of silicon solar cells to attract positive-charged holes. Especially aluminum oxide thin film is a quite suitable passivation on the rear side of p-type silicon solar cells. This paper, it demonstrate the interfacial microstructure and electrical properties of mono-crystalline silicon surface passivated by $Al_2O_3$ films during firing process as applied for screen-printed solar cells. The first task is a comparison of the interfacial microstructure and chemical bonds of PECVD $Al_2O_3$ and of PEALD $Al_2O_3$ films for the surface passivation of silicon. The second is to study electrical properties of double-stacked layers of PEALD $Al_2O_3$/PECVD SiN films after firing process in the temperature range of $650{\sim}950^{\circ}C$.

• 한국세라믹학회지
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• 제49권6호
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• pp.659-662
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• 2012

Yttrium (Y) and niobium (Nb) doped spherical $Li_4Ti_5O_{12}$ were synthesized to improve the energy density and electrochemical properties of anode material. The synthesized crystal was $Li_4Ti_5O_{12}$, the particle size was less than $1{\mu}m$ and the morphology was spherical and well dispersed. The Y and Nb optimal doping amounts were 1 mol% and 0.5 mol%, respectively. The initial capacity of the dopant discharge and charge capacity were respectively 149mAh/g and 143 mAh/g and were significantly improved compared to the undoped condition at 129 mAh/g. Also, the capacity retention of 0.2 C/5 C was 74% for each was improved to 94% and 89%. It was consequently found that Y and Nb doping into the $Li_4Ti_5O_{12}$ matrix reduces the polarization and resistance of the solid electrolyte interface (SEI) layer during the electrochemical reaction.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.914-920
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• 2000

When the charge-trap type SONOS(polysilicon-oxide-nitride-oxide-semiconductor) cells are used to flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM(Nonvolatile Semiconductor Memory) cells were fabricated using 0.35 ㎛ standard memory cell embedded logic process including the ONO cell process, based on retrograde twin-well, single-poly, single metal CMOS(Complementary Metal Oxide Semiconductor) process. The thickness of ONO triple-dielectric for the memory cell is tunnel oxide of 24 $\AA$, nitride of 74 $\AA$, blocking oxide of 25 $\AA$, respectively. The program mode(V$\_$g/=7, 8, 9 V, V$\_$s/=V$\_$d/=-3 V, V$\_$b/=floating) and the erase mode(V$\_$g/=-4, -5, -6 V, V$\_$s/=V$\_$d/=floating, V$\_$b/=3 V) by MFN(Modified Fowler-Nordheim) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation(ΔV$\_$th/, S, G$\_$m/) characteristics than channel MFN tunneling operation. Also, the program inhibit conditins of unselected cell for separated source lines NOR-type flash memory application were investigated. we demonstrated that the phenomenon of the program disturb did not occur at source/drain voltage of 1 V∼12 V and gate voltage of -8 V∼4 V.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.486-490
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• 2014

$Al_2O_3$ films on silicon carbide were fabricated by Aerosol deposition with annealing temperature at $800^{\circ}C$ and $1,000^{\circ}C$. The effect of thermal treatment on physical properties of $Al_2O_3$ thin films has been investigated by XRD (X-ray diffraction), AFM (atomic force microscope), SEM (scanning electron microscope), and AES (auger electron spectroscopy). Also electrical properties have been investigated by Keithley 4,200 semiconductor parameter analyzer to explain the interface trapped charge density ($D_{it}$), flatband voltage ($V_{FB}$) and leakage current ($I_o$). $Al_2O_3$ films become crystallized with increasing temperature by calculating full width at half maximum (FWHM) of diffraction peaks, also surface morphology is observed by topography measurement in non-contact mode AFM. $D_{it}$ was $2.26{\times}10^{-12}eV^{-1}.cm^{-2}$ at $800^{\circ}C$ annealed sample, which is the lowest value in all samples. Also the sample annealed at $800^{\circ}C$ has the lowest leakage current of $4.89{\times}10^{-13}A$.

• 한국산학기술학회논문지
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• 제12권2호
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• pp.920-926
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• 2011

본 논문에서는 신재생에너지 활용을 위한 다중 추적식 태양광 발전 감성형 LED 가로등을 제안한다. 제안하는 가로등 시스템은 다중 추적방식의 태양광 추적기능을 갖추고 있고 감성형 고품위 LED 램프와 제어회로를 사용하여 센서를 통해 입력되는 온도 및 습도를 기반으로 최대의 일조량을 받을 수 있도록 하였다. 신재생에너지 활용의 핵심 요소인 효율적인 축전지 활용을 위해 충방전 컨트롤러를 개발하였고 원격모니터링 기능 및 제어기능도 구현 하였다. 제안하는 가로등 시스템은 기존 기술에 비하여 추적 동작이 우수하고 에너지효율이 향상되었으며 기존에 개발되지 않았던 추적식 태양광 발전 시스템과 감성형 LED를 결합함으로써 차세대 가로등 시스템의 모델로서의 활용될 수 있게 하였다.

• 방사성폐기물학회지
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• 제16권2호
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• pp.173-182
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• 2018

원자력 시설 내 방사능을 포함하는 물질의 제염을 위한 방법 중 거품제염은 2차폐기기물의 양을 저감시킬 수 있는 장점을 지니고 있다. 본 연구에서는 거품안정성을 증가시킬 수 있는 실리카 나노입자를 여러가지 조건을 달리하여 합성하였다. Cetyltrimethylammonium bromide(CTAB)는 거품제염제의 거품안정성에 많은 영향을 나타내었다. 이러한 거품안정성이 향상된 이유는 제염제 내에 공기와 용액간의 계면에서 실리카 나노입자와 계면활성제의 반응으로 생각된다. 또한, CTAB는 실리카나노입자의 분리특성에서도 우수한 성능을 나타냈었다. 실리카 나노입자 분리시, CTAB의 탄화수소기에 의한 소수성과 전하중성화에 의해서 실리카 나노입자의 응집현상을 향상시켰다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.31-32
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• 2010

In our previous reports [1-3], electron transport for the switching and memory devices using alkyl thiol-tethered Ru-terpyridine complex compounds with metal-insulator-metal crossbar structure has been presented. On the other hand, among organic memory devices, a memory based on the OFET is attractive because of its nondestructive readout and single transistor applications. Several attempts at nonvolatile organic memories involve electrets, which are chargeable dielectrics. However, these devices still do not sufficiently satisfy the criteria demanded in order to compete with other types of memory devices, and the electrets are generally limited to polymer materials. Until now, there is no report on nonvolatile organic electrets using nano-interfaced organic monomer layer as a dielectric material even though the use of organic monomer materials become important for the development of molecularly interfaced memory and logic elements. Furthermore, to increase a retention time for the nonvolatile organic memory device as well as to understand an intrinsic memory property, a molecular design of the organic materials is also getting important issue. In this presentation, we report on the OFET memory device built on a silicon wafer and based on films of pentacene and a SiO2 gate insulator that are separated by organic molecules which act as a gate dielectric. We proposed push-pull organic molecules (PPOM) containing triarylamine asan electron donating group (EDG), thiophene as a spacer, and malononitrile as an electron withdrawing group (EWG). The PPOM were designed to control charge transport by differences of the dihedral angles induced by a steric hindrance effect of side chainswithin the molecules. Therefore, we expect that these PPOM with potential energy barrier can save the charges which are transported to the nano-interface between the semiconductor and organic molecules used as the dielectrics. Finally, we also expect that the charges can be contributed to the memory capacity of the memory OFET device.[4]

• 한국진공학회지
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• 제18권4호
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• pp.281-287
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• 2009

본 연구에서는 고진공 조건에서 열기화 증착 방법으로 산화막으로 덮인 Mg 리본(MgO/Mg) 위에 Pd을 증착하였다. 고진공 속에서 만든 시료의 전자구조를 in-situ X-선 광전자 분광법 (XPS)을 통하여 분석하였고, 분석 후, FE-SEM을 통해 증착량의 증가에 따른 표면구조의 변화를 확인하였다. Pd 증착량이 1 나노미터 (nm) 이하인 경우에는 증착량 증가에 따른 Pd 나노입자 크기의 증가를 확인하였으며, Pd을 1 nm 이상의 두께로 증착시킨 경우에는 Pd 입자들의 뭉침에 의해 얇은 필름이 형성됨을 관찰하였다. Pd과 기판사이의 전하이동에 의하여 산화물/금속 계면의 Pd 원자들은 부분적으로 양전하를 띔을 확인하였다.

• 대한금속재료학회지
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• 제50권2호
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• pp.159-163
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• 2012

A TCO-less ruthenium (Ru) catalytic layer on glass substrate instead of conventional Ru/TCO/ glass substrate was assessed as counter electrode (CE) material in dye sensitized solar cells (DSSCs) by examining the effect of the Ru thickness on the DSSC performance. Ru films with different thicknesses (34, 46, 69, and 90 nm) were deposited by atomic layer deposition (ALD) on glass substrates to replace both existing catalyst and electrode layer. In order to make our comparison, we also prepared an Ru catalytic layer by a similar method on FTO/glass substrate. Finally, we prepared the $0.45cm^2$ DSSC device the properties of the DSSCs were examined by cyclic voltammetry (CV), impedance spectroscopy (EIS), and current-voltage (I-V) method. CV measurements revealed an increase in catalytic activity with increasing film thickness. The charge transfer resistance at the interface between the electrolyte and Rudecreased with increasing Ru thickness. I-V results showed that the energy conversion efficiency increased up to 1.96%. Our results imply that TCO-less Ru/glass might perform as both catalyst and electrode layer when it is used in counter electrodes in DSSCs.

• 대한금속재료학회지
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• 제50권3호
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• pp.243-247
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• 2012

A ruthenium (Ru) catalytic layer and a conventional Pt layer were assessed as counter electrodes (CE) for dye sensitized solar cells (DSSCs). Ru films with different thicknesses of 34, 46, and 90 nm were deposited by atomic layer deposition (ALD). Pt layers with the same thicknesses were prepared by sputtering. $0.45cm^2$ DSSCs were prepared and their properties were characterized by FE-SEM, cyclic voltammetry (CV), impedance spectroscopy (EIS), and current-voltage (I-V). FE-SEM revealed that the crystallized Ru films and Pt films had been deposited quite conformally. CV showed that the catalytic activity of Pt was much greater than that of Ru. In addition, although the catalytic activity of Pt did not depend on the thickness, that of Ru showed an increase with increasing thickness. Impedance analysis revealed high charge transfer resistance at the Ru interface and a decrease with increasing Ru thickness, whereas Pt showed low resistance with no thickness dependence. Despite the relatively small catalytic activity of Ru, the I-V result revealed the average energy conversion efficiency of Ru and Pt to be 2.98% and 6.57%, respectively. These results suggest that Ru can be used as counter electrodes in DSSCs due to its extremely low temperature process compatibility.