• 전기화학회지
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• 제3권3호
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• pp.131-135
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• 2000

[ $LiMn_2O_4$ ]박막전지의 충방전 사이클에 따른 용량 감소의 원인을 파악하기 위하여, $LiMn_2O_4/1M\;LiClO_4-PC/Li$전지를 구성하여 충방전 사이클에 따른 AC impedance분석을 수행하였다. 적절한 등가회로를 이용하여 비선형 최소자승 맞춤에서 얻은 값이 Impedance측정 결과와 잘 일치하였다. 충방전에 따른 정전용량은 초기의 급격한 감소를 보인 이후 완만한 감소를 보였다. 충방전 사이클이 초기 70-100사이클까지는 저항 성분 중 양극전해질 계면의 전하 전달저항 성분이 급격히 증가하다가 이후 안정된 값을 보임으로 초기 급격한 용량변화의 원인으로 파악되었다. 전하전달 저항이 안정된 이후에는 Warburg저항이 충방전에 따라 조금씩 증가하였으며, LiMn2O4박막의 화학확산 계수가 사이클에 따라 초기 $5.15\times10^{-11}cm^2/sec$에서 800사이클이 지난 후 $6.3\times10^{-12}cm^2/sec$로 점차 감소하는 것이 관찰되어 100사이클이 후의 용량감소의 지배적 원인으로 파악하였다. Warburg저항의 증가는 Jahn-Teller변형 또는 Mn용해에 의한 것으로 추정하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 C
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• pp.1712-1714
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• 2004

During the last 20 years organic semiconductors have attracted considerable attention due to their interesting physical properties followed by various technological applications in the area of electronics and opto-electronics. It has been a long time since organic solar cells were expected as a low-cost energy-conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar cell devices based on zinc-phthalocyanine(ZnPc) as donor(D) and fullerine($C_{60}$) as electron acceptor(A) with doped charge transport layers, $Alq_3$ as an electron transport or injection layer. We observed the photovoltaic characteristics of the solar cell devices using the Xe lamp as a light source.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.230-230
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• 2012

Graphene have showed promising performance as electrodes of organic devices such as organic transistors, light-emitting diodes, and photovoltaic solar cells. In particular, among various organic materials of graphene-based organic devices, pentacene has been regarded as one of the promising organic material because of its high mobility, chemical stability. In the bottom-contact device configuration generally used as graphene based pentacene devices, the morphology of the organic semiconductors at the interface between a channel and electrode is crucial to efficient charge transport from the electrode to the channel. For the high quality morphology, understanding of initial stages of pentacene growth is essential. In this study, we investigate self-assembly of pentacene molecules on graphene formed on a 6H-SiC (0001) substrate by scanning tunneling microscopy. At sub-monolayer coverage, adsorption of pentacene molecules on epitaxial graphene is affected by $6{\times}6$ pattern originates from the underlying buffer layer. And the orientation of pentacene in the ordered structure is aligned with the zigzag direction of the edge structure of single layer graphene. As coverage increased, intermolecular interactions become stronger than molecule-substrate interaction. As a result, herringbone structures the consequence of higher intermolecular interaction are observed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.40-49
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• 2001

We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}Ｖ_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

• Corrosion Science and Technology
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• 제17권2호
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• pp.54-59
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• 2018

The effect of external DC electric field on atmospheric corrosion behavior of zinc under a thin electrolyte layer (TEL) was investigated by measuring open circuit potential (OCP), cathodic polarization curve, and electrochemical impedance spectroscopy (EIS). Results of OCP vs. time curves indicated that the application of external DC electric field resulted in a negative shift of OCP of zinc. Results of cathodic polarization curves measurement and EIS measurement showed that the reduction current of oxygen increased while charge transfer resistance ($R_{ct}$) decreased under the external DC electric field. Variation of OCP negative shift, reduction current of oxygen, and $R_{ct}$ increase with increasing of external DC electric field strength as well as the effect of external DC electric field on double-layer structure in the electrode/electrolyte interface and ions distribution in thin electrolyte layer were analyzed. All results showed that the external DC electric field could accelerate the corrosion of zinc under a thin electrolyte layer.

• 대한기계학회논문집
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• 제15권1호
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• pp.163-168
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• 1991

본 연구에서는 여러가지의 성형조건에서 미끄름을 지배하는 상수를 측정하고, 유동 선단(flow front)에 미치는 이 상수의 영향을 검토한다. 또 측정된 상수를 가 지고 사각형 및 중공 원형 평판 압축성형에 대해서 2차원 유한 요소해석을 하고 실험 결과와 비교 검토한다.

• 한국진공학회지
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• 제16권3호
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• pp.227-230
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• 2007

리튬이온 제조공정에서 전해질 주입 후 반드시 거쳐야 하는 숙성공정은 일반적으로 별로 중요하게 다루어 지지 않고 있다. 왜냐하면 전지 숙성공정이 전지성능에 영향을 주는 인자에 대하여 그다지 깊이 있게 연구가 되어있지 않기 때문이다. 하지만 숙성공정 중에 나타나는 OCV 변화는 전해질 내에 포함되어 있는 성분이 전극으로 전기화학적 흡착되어 나타나는 현상으로 SEI 피막 형성에 매우 중요한 역할을 하게 된다. 이에 본 연구에서는 숙성기간 중에 변하게 되는 OCV와 SEI피막의 관계, 그리고 전지성능과의 연계에 대하여 깊이 있게 논의하고자 한다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.200-200
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• 2003

Polycrystalline Si(polysilicon) TFTs have opened a way for the next generation of display devices, due to their higher mobility of charge carriers relative to a-Si TFTs. The polysilicon W applications extend from the current Liquid Crystal Displays to the next generation Organic Light Emitting Diodes (OLED) displays. In particular, the OLED devices require a stricter control of properties of gate oxide layer, polysilicon layer, and their interface. The polysilicon layer is generally obtained by annealing thin film a-Si layer using techniques such as solid phase crystallization and excimer laser annealing. Typically laser-crystallized Si films have grain sizes of less than 1 micron, and their electrical/dielectric properties are strongly affected by the presence of grain boundaries. Impedance spectroscopy allows the frequency-dependent measurement of impedance and can be applied to inteface-controlled materials, resolving the respective contributions of grain boundaries, interfaces, and/or surface. Impedance spectroscopy was applied to laser-annealed Si thin films, using the electrodes which are designed specially for thin films. In order to understand the effect of grain size on physical properties, the amorphous Si was exposed to different laser energy densities, thereby varying the grain size of the resulting films. The microstructural characterization was carried out to accompany the electrical/dielectric properties obtained using the impedance spectroscopy, The correlation will be made between Si grain size and the corresponding electrical/dielectric properties. The ramifications will be discussed in conjunction with active-matrix thin film transistors for Active Matrix OLED.

• 한국전기전자재료학회논문지
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• 제27권4호
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• pp.199-202
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• 2014

The effect of neutron irradiation on the properties of SiC Schottky Diode has been investigated. SiC Schottky diodes were irradiated under neutron fluences and compared to the reference samples to study the radiation-induced changes in device properties. The condition of neutron irradiation was $3.1{\times}10^{10}$ $n/cm^2$. The current density after irradiation decreased from 12.7 to 0.75 $A/cm^2$. Also, a slight positive shift (${\Delta}V_{th}$= 0.15 V) in threshold voltage from 0.53 to 0.68 V and a positive change (${\Delta}{\Phi}_B$= 0.16 eV) of barrier height from 0.89 to 1.05 eV have been observed by the neutron irradiation, which is attributed to charge damage in the interface between the metal and the SiC layer.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.239-251
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• 2016

The potential of nanocomposites have been drawing the intention of the researchers from energy storage to electrical insulation applications. Nanocomposites are known to improve dielectric properties, such as the increase in dielectric breakdown strength, suppressing the partial discharge (PD) as well as space charge, and prolonging the treeing, etc. In this review, different theories have been established to explain the reactions at the interaction zone of polymer matrix and nanofiller; the characterization methods of nanocomposites are also presented. Furthermore, the remarkable findings in the fields of epoxy, cross-linked polyethylene (XLPE), polypropylene and polyvinyl chloride (PVC) nanocomposites are reviewed. In this study, it was observed that there is lack of comparison between results of lab scale specimens and actual field aged cables. Also, non-standardization of the preparation methods and processing parameters lead to changes in the polymer structure and its surface degradation. However, on the positive side, recent attempt of 250 kV XLPE nanocomposite HVDC cables in service may deliver a promising performance in the coming years. Moreover, materials such as self-healing polymer nanocomposites may emerge as substitutes to traditional insulations.