• 전기화학회지
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• 제6권3호
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• pp.174-177
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• 2003

Electric double-layer capacitors based on charge storage at the interface between a high surface area activated carbon electrode and an electrolyte solution are characterized by their long cycle-life and high power density in comparison with batteries. However, energy density of electric double-layer capacitors obtained at present is about 6 Wh/kg at a power density of 500W/kg which is smaller as compared with that of batteries and limits the wide spread use of the capacitors. Therefore, a new capacitor that shows larger energy density than that of electric double-layer capacitors is proposed. The new capacitor is the hybrid capacitor consisting of activated carbon cathode, carbonaceous anode and an organic electrolyte. Maximum voltage applicable to the cell is over 4.2V that is larger than that of the electric double-layer capacitor. As a result, discharged energy density on the basis of stacked volume of electrode, current collector and separator is more than 18Wh/l at a power density of 500W/l.

• 한국세라믹학회지
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• 제28권3호
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• pp.179-188
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• 1991

The semiconducting BaTiO3 ceramics used in this study were sintered in the reducing atomosphere(hydrogen gas) and neutral atmosphere(nitrogen gas), then were heat-treated in air to vary defect concentrations. In this experiment, the correlations between the composition analysis and electrical characteristics of these samples were investigated. When the BaTiO3 ceramics were sintered in N2 atmosphere, it was observed that the Ba contents near the interface were lower than that of the grain center, and these samples showed superior PTCR effects. From analysis of the resistivities of grains and grain boundaries by CIRM(Complex Impedance Resonance Method), it was confirmed that the PTCR effects were caused by the resistivity of grain boundaries. And from measurement of the capacitance at each temperature, the samples sintered in N2 atmosphere show the increase of room temperature resistance and the decrease of capacitance as a result of the increase of the charge depletion layers. This phenomenon agrees well with the cation deficiencies in the analytical results.

• 한국세라믹학회지
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• 제55권1호
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• pp.1-20
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• 2018

Semiconducting nanomaterials have attracted considerable interest in recent years due to their high sensitivity, selectivity, and fast response time. In addition, for portable applications, they have low power consumption, lightweight, simple in operation, a low maintenance cost. Furthermore, it is easy to manufacture microelectronic sensor structures with metallic oxide sensitive thin layers. The use of semiconducting metal oxides to develop highly sensitive chemiresistive sensing systems remains an important scientific challenge in the field of gas sensing. According to the sensing mechanisms of gas sensors, the overall sensor conductance is determined by surface reactions and the charge transfer processes between the adsorbed species and the sensing material. The primary goal of the present study is to explore the possibility of using semiconducting mixed metal oxide nanostructure as a potential sensor material for selective gases.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.435-438
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• 2007

$V_{2}O_{5}$ was tested as a p-dopant for lower operating voltage and higher stability of OLEDs. Low voltage and high stability were achieved using this doping layer. It can be separated to bulk and interface contributions and the latter is a more dominant factor both of operation voltage and stability.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1969-1971
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• 2000

This paper presents a data acquisition and analysis program modules that has been developed using the Labview program. These program modules can use to acquire and analyze leakage current data of insulator under different contamination conditions. The experimental hardware made up salt fog chamber, AC/DC power supply, transducer (shunt resistor), measurement devices and PC with the GPIB (General Purpose Interface Bus). And analysis program modules can calculate pulse level count, accumulated charge, average leakage current, power spectrum, and harmonics. The result of applying these analytical program modules to polymeric insulator is available for evaluation of leakage current characteristic of outdoor insulators.

• 대한안전경영과학회:학술대회논문집
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• 대한안전경영과학회 1999년도 추계학술대회
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• pp.345-354
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• 1999

A new type of capacitor named "Super Capacitor" has been developed, in which the properties of electric double layer formed at the interface of activated carbon electrode- liquid organic electrolyte is applied. This capacitor is small In size, light in weight, wide In temperature range(-25~$70^{\circ}C$), large in charge-discharge capability and good in voltage preservation. And this super capacitor is applied as a power back-up for electricity failure in volatile memory devices etc., a power source for a short time and a power source for operating actuators. At present the development of high power back-up types of the capacitor system and improvement of their characteristics are being actively conducted in order to find wider applications.lications.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권5호
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• pp.367-372
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• 1999

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshod voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate only and the gate and drain bias stressing. Also, we have quantitatively analyzed the degradation phenomena by analytical method. We have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the channel region and $poly-Si/SiO_2$ interface is prevalent in gate and drain bias stressed device.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.358-359
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• 2006

Ru-C nano-composite films were prepared by MOCVD, and their microstructures and their electrode properties for oxygen gas sensors were investigated. Deposited films contained Ru particles of 5-20 nm in diameter dispersed in amorphous C matrix. The AC conductivities associating to the interface charge transfer between Ru-C composite electrode and YSZ electrolyte were 100-1000 times higher than that of conventional paste-Pt electrodes. The emf values of the oxygen gas concentration cell constructed from the nano-composite electrodes and YSZ electrolyte showed the Nernstian theoretical values at low temperatures around 500 K. The response time of the concentration cell was 900 s at 500 K.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.155-155
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• 2000

Adsorption of alkali metals on a silicon surface has attracted much attention due to its importance in metal-semiconductor interface technology, In particular, the bonding nature of alkali metal to silicon substrate has been a focus of fundamental research efforts. We examined the adsorbed layer of Cs on a Si(111)-(7$\times$) surface by reactive ion scattering (RIS) of hyperthermal Cs+ beams. RIS from a Cs-adsorbed surface gives rise to Cs, representing pickup of surface Cs by Cs projectile. The Cs intensity is proportional to surface coverage of Cs at a high substrate temperature (473 K), while it varies anomalously with Cs coverage at low temperatures (130-170 K). This observation indicates that RIS selectively detects metallic Cs on surface, but discriminates ionic Cs. Transition from ionic to metallic Cs adlayer is driven by thermal diffusion of Cs and their clustering process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.26-26
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• 2000

High quality epitaxial Y2O3 thin films were prepared on Si(111) and (001) substaretes by using ion beam assisted deposition. As a substrate, clean and chemically oxidized Si wafers were used and the effects of surface state on the film crystallinity were investigated. The crystalline quality of the films were estimated by x-ray scattering, rutherford backscattering spectroscopy/channeling, and high-resolution transmission electron microscopy (HRTEM). The interaction between Y and Si atoms interfere the nucleation of Y2O3 at the initial growth stage, it could be suppressed by the interface SiO2 layer. Therefore, SiO2 layer of the 4-6 layers, which have been known for hindering the crystal growth, could rather enhance the nucleation of the Y2O3 , and the high quality epitaxial film could be grown successfully. Electrical properties of Y2O3 films on Si(001) were measured by C-V and I-V, which revealed that the oxide trap charge density of the film was 1.8$\times$10-8C/$\textrm{cm}^2$ and the breakdown field strength was about 10MV/cm.