• 한국광학회지
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• 제17권3호
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• pp.262-267
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• 2006

효율적인 PPLN 제작을 위하여 DC 전계를 인가하면서 $LiNbO_3$에 인가되는 전압 및 전류를 실시간으로 측정할 수 있는 실험 장치를 제안하였다. 제안된 실험 장치를 사용함으로써 PPLN의 분극반전에 필요한 충분한 전하량을 공급하기 위한 전계인가시간을 수초 단위로 증가시킬 수 있어 $LiNbO_3$에 주입되는 전하량의 조절을 용이하게 할 수 있었다. 또한 PPLN의 분극반전 과정을 단계별로 분류하고 각 단계별 실험결과를 바탕으로 분석함으로써 최적의 PPLN 제작조건을 구할 수 있었다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2009년도 춘계학술대회
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• pp.671-674
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• 2009

본 논문에서는 수동형 UHF RFID 태그 칩에 사용되는 저전력, 저면적 256b 비동기식 EEPROM을 설계 하였다. 먼저 EEPROM의 저전력 특성을 얻기 위해 1.8V의 공급전압을 사용하였고, 저전압 특성을 갖는 N-type Schottky Diode를 사용하여 Dickson Charge pump를 설계하였다. 그리고 주변회로에서의 저면적 설계를 위해 비동기식 인터페이스 방식과 Separate I/O 방식을 사용하였다. 그리고 DC-DC 변환기의 면적을 줄이기 위하여 Schottky Diode를 사용한 Dickson Charge Pump를 설계하였다. $0.18{\mu}m$ EEPROM 공정을 이용하여 설계된 16 행 ${\times}$ 16 열의 어레이를 갖는 256b EEPROM의 레이아웃 면적은 $311.66{\times}490.59{\mu}m^2$이다.

• Tribology and Lubricants
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• 제22권2호
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• pp.59-65
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• 2006

In hard disk drives as the head to disk spacing continues to decrease to facilitate recording densities, slider disk interactions have become much more severe due to direct contact of head and disk surfaces in both start/stop and flying cases. The slider disk interaction in CSS (contact-start-stop) mode is an important source of particle generation and tribocharge build-up. The tribocharge build-up in the slider disk interface can cause ESD (electrostatic discharge) damage. In turn, ESD can cause severe melting damage to MR or GMR heads. The spindle speed of typical hard disk drives has increased in recent years from 5400 rpm to 15000 rpm and even higher speeds are anticipated in the near future. And the increasing disk velocity leads to increasing disk acceleration and this might affect the tribocharging phenomena of the slider/disk interface. We investigated the tribocurrent/voltage build-up generated in HDD, operating at increasing disk accelerations. In addition, we examined the effects with relative humidity conditions and rest time. We found that the tribocurrent/voltage was generated during pico-slider/disk interaction and its level was about $3\sim16pA$ and $0.1\sim0.3V$, respectively. Tribocurrent/voltage build-up was reduced with increasing disk acceleration. Higher humidity conditions $(75\sim80%)$ produced lower levels tribovoltage/current. Therefore, a higher tribocharge is expected at a lower disk acceleration and lower relative humidity condition. Rest time affected the charge build-up at the slider-disk interface. The degree of tribocharge build-up increased with increasing rest time.

• 한국표면공학회지
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• 제51권4호
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• pp.243-248
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• 2018

All solid state thin film batteries with two types of cell structure, Pt / $LiCoO_2$ / LiPON / Cu and Pt / $LiCoO_2$ / LiPON / $LiCoO_2$ / Cu, are prepared and their electrochemical performances are investigated to evaluate the effect of $LiCoO_2$ interlayer at the interface of LiPON / Cu. The crystallinity of the deposited $LiCoO_2$ thin films is confirmed by XRD and Raman analysis. The crystalline $LiCoO_2$ cathode thin film is obtained and $LiCoO_2$ as the interlayer appears to be amorphous. The surface morphology of Cu current collector after cycling of the batteries is observed by AFM. The presence of a 10 nm-thick layer of $LiCoO_2$ at the interface of LiPON / Cu enhances the interfacial adhesion and reduces the interfacial resistance. As a result, Li plating / stripping at the interface of LiPON / Cu during charge/discharge reaction takes place more uniformly on Cu current collector, while without the interlayer of $LiCoO_2$ at the interface of LiPON / Cu, the Li plating / stripping is localized on current collector. The thin film batteries with the interlayer of $LiCoO_2$ at the interface of LiPON / Cu exhibits enhanced initial coulombic efficiency, reversible capacity and cycling stability. The thickness of the anode current collector Cu also appears to be crucial for electrochemical performances of all solid state thin film batteries.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.92-92
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• 2014

Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.265-270
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• 2017

4H-SiC has attracted attention for high-power and high-temperature metal-oxide-semiconductor field-effect transistors (MOSFETs) for industrial and automotive applications. The gate oxide in the 4H-SiC MOS system is important for switching operations. Above $1000^{\circ}C$, thermal oxidation initiates $SiO_2$ layer formation on SiC; this is one advantage of 4H-SiC compared with other wide band-gap materials. However, if post-deposition annealing is not applied, thermally grown $SiO_2$ on 4H-SiC is limited by high oxide charges due to carbon clusters at the $SiC/SiO_2$ interface and near-interface states in $SiO_2$; this can be resolved via low-temperature deposition. In this study, low-temperature $SiO_2$ deposition on a Si substrate was optimized for $SiO_2/4H-SiC$ MOS capacitor fabrication; oxide formation proceeded without the need for post-deposition annealing. The $SiO_2/4H-SiC$ MOS capacitor samples demonstrated stable capacitance-voltage (C-V) characteristics, low voltage hysteresis, and a high breakdown field. Optimization of the treatment process is expected to further decrease the effective oxide charge density.

• 한국재료학회지
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• 제23권8호
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• pp.430-434
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• 2013

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

• 한국세라믹학회지
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• 제36권2호
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• pp.172-177
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• 1999

흑연 및 카본재료는 알칼리 금속을 intercalation/de-intercalation 시킬수 있는 특성을 지니고 있으며, 또한 Li-intercalated carbon의 화학 potential이 Li 금속에 가까운 낮은 값을 지닌 특성으로 리튬 이차전지의 anode 전극재료로서 널리 쓰일 가능성이 매우 크다. 본 연구에서는 카본재료 중 mesocarbon microbeads (MCMB)를 리튬 이차전지의 anode 전극재료로 사용하여 전지반응을 수행하고, 전극의 충.방 전 특성과 전극계면 반응특성에 대하여 연구하였다. 즉, Li/carbon(MCMB) 전지 cell를 제작하고 전해질과 전극계면에서 일어나는 전기화학 반응특성을 충.방 전 시험, Potentionat/Galvanostat 시험, FT-IR 분석, XRD 및 SED 분석에 의하여 고찰하였다. 전지반응이 진행되면서 전극과 전해질 계면에서 고체상태의 부동태 막 (passivation film)이 형성되었으며, 일단 형성된 막은 전해질 내에 용해되지 않고 충.방 전 횟수가 증가하면서 두께가 증가되었다. 또한, 이러한 전극 계면에서 형성된 부동태 막과 중전용량과의 관계에 대하여 고찰하였다.

• 한국수소및신에너지학회논문집
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• 제16권2호
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• pp.142-149
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• 2005

[ $LiNiO_2$ ] was mixed with $TiO_2$ or ZnO for the preparation of a cathode. The electrochemical properties of the cathode were investigated and the effects of the addition of $TiO_2$ or ZnO were discussed. The first discharge capacity decreased as the quantity of the added $TiO_2$ or ZnO increased. It is probably due to the decrease in the area of reaction interface according to the increase in the amount of the added oxide. When 2wt.% and 5wt.% of oxides are added, the discharge capacity increased as the number of cycles increased. It is considered that this results from the increase in the area of reaction interface because the oxide is detached from the $LiNiO_2$ with the increase in the number of cycles. The 1wt.% $TiO_2$ or ZnO-added $LiNiO_2$ had a larger first charge capacity than $LiNiO_2$. This is considered to result from the deintercalation of Li ions in the Ni sites along with the Li ions in the Li sites.