• Journal of Information Display
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• v.10 no.3
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• pp.111-116
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• 2009

In this paper, a plasma-assisted patterning method for the organic layers of organic light-emitting diodes (OLEDs) and its effect on the OLED performances are reported. Oxygen plasma was used to etch the organic layers, using the top electrode consisting of lithium fluoride and aluminum as an etching mask. Although the current flow at low voltages increased for the etched OLEDs, there was no significant degradation of the OLED efficiency and lifetime in comparison with the conventional OLEDs. Therefore, this method can be used to reduce the ohmic voltage drop along the common top electrodes by connecting the top electrode with highly conductive bus lines after the common organic layers on the bus lines are etched by plasma. To further analyze the current increase at low voltages, the plasma patterning effect on the OLED performance was investigated by changing the device sizes, especially in one direction, and by changing the etching depth in the vertical direction of the device. It was found that the current flow increase at low voltages was not proportional to the device sizes, indicating that the current flow increase does not come from the leakage current along the etched sides. In the etching depth experiment, the current flow at low voltages did not increase when the etching process was stopped in the middle of the hole transport layer. This means that the current flow increase at low voltages is closely related to the modification of the hole injection layer, and thus, to the modification of the interface between the hole injection layer and the bottom electrode.

• Journal of Korean Society of Water and Wastewater
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• v.26 no.1
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• pp.149-157
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• 2012

Experiments for As(V) removal using synthesized $Ca{\cdot}Al$-monosulfate was performed from the water contaminated with arsenate. Monosulfate is known as LDHs (Layered Double Hydroxides) which is one of the anionic clay minerals. Monosulfate was synthesized mixing $C_3A$ (tricalcium aluminate), gypsum (calcium sulfate), and water with an intercalation method. The product form the synthesis was characterized by FE-SEM, WDXRF, PXRD, and FT-IR. Experiments with different doses of monosulfate were carried out for kinetic. As a result of experiment, the concentration of As(V) was reduced from 0.67 mM to 0.19 mM (0.67mM of monosulfate) and 0.178 mM (1.34 mM of monosulfate). The concentration of sulfate was increased with As(V) decrease. The result of PXRD showed that the d-spacing of inter layer ($d_{003}$ peak) was shifted from 8.927 ${\AA}$ to 8.095 ${\AA}$ because the sulfate in the inter layer of monosulfate was exchanged arsenate with water molecules bonded. From the FT-IR results, a new single band (800 cm-1) was observed after the reaction of monosulfate and As(V). The arsenic removal can be regarded as anion exchange mechanism that is one of the characteristics of LDHs from the results of PXRD and FT-IR analysis.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.7-10
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• 2007

The electron charging and degradation of anode phosphor layers are showed major problems in high electric field with anode electrode of field emission devices. An Al metal layer on the phosphor layer may get rid of these problems. This Al metal layer are formed with the roughness of phosphor surface layer without interlayer and cannot be given rise to enhance the luminance efficiency. In order to enhance the brightness, an anode layer need to be flated between phosphor layer and Al metal layer in anode electrode. After optimizing the anode phosphor layer, an anode layer with Al metal and inter layer increased the brightness and luminescence efficiency 1.5 times more than only phosphor layer in anode.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.131-134
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• 2011

Back-end-of-line using ultra low-k (ULK; k < 2.5) has been required to reduce resistive capacitance beyond 45 nmtechnologies, because micro-processing units need higher speed and density. There are two strategies to manufacture ULK inter-layer dielectric (ILD) materials using an air-gap (k = 1). The former ULK and calcinations of ILD degrade the mechanical strength and induce a high cost due to the complication of following process, such as chemical mechanical polishing and deposition of the barrier metal. In contrast, the air-gap based low-k ILD with a relatively higher density has been researched on the trench-type with activity, but it has limited application to high density devices due to its high air-gap into the next metal layer. The height of air-gap into the next metal layer was reduced by changing to the via-typed air-gap, up to about 50% compared to that of the trench-typed air-gap. The controllable ULK was easily fabricated using the via-typed air-gap. It is thought that the via-type air-gap made the better design margin like via-patterning in the area with the dense and narrow lines.

• Nuclear Engineering and Technology
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• v.52 no.10
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• pp.2299-2305
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• 2020

Zr alloy specimens were coated with Cr-Al alloy to enhance their resistance to oxidation. The coated samples were oxidized at 1200 ℃ in a steam environment for 300 s and showed extremely low oxidation when compared to uncoated Zr alloy specimens. The microstructure and elemental distribution of the oxides formed on the surface of Cr-Al alloys have been investigated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). A very thin protective layer of Cr₂O₃ formed on the outer surface of the Cr-Al alloy, and a thin Al₂O₃ layer was also observed in the Cr-Al alloy matrix, near the surface. Our results suggest that these two oxide layers near the surface confers excellent oxidation resistance to the Cr-Al alloy. Even after exposure to a high temperature of 1200 ℃, inter-diffusion between the Cr-Al alloy and the Zr alloy occurred in very few regions near the interface. Analysis of the inter-diffusion layer by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS) measurement confirmed its identity as Cr₂Zr.

• Journal of Broadcast Engineering
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• v.26 no.2
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• pp.208-220
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• 2021

This paper evaluates the performance of multilayer VVC and SHVC. Multilayer VVC supports a multi-layer coding and many coding technologies have been added and extended compared to SHVC. For this reason, it is necessary to evaluate the multi-layer coding performance of VVC and the coding performance for inter-layer reference prediction. Multilayer VVC provides significant BD-rate improvement of AI 24.4%, RA 29.4%, LDB 29.4%, LDP 32.6% on average when compared to SHVC, so that it is shown that VVC can provide scalability more efficiently. On the other hand, the complexity of the encoding time increases by an average of 14 times and decoding time by an average of 1.8 times, which requires efforts to reduce the complexity.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.29-32
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• 2008

The electron charging and degradation of anode phosphor layers are showed major problems in high electric field with anode electrode of field emission devices. An AI metal layer on the phosphor layer may get rid of these problems. This Hetero-metal-oxide phosphor layer are formed with the roughness of phosphor surface layer without interlayer and cannot be given rise to enhance the luminance efficiency. In order to enhance the brightness, an anode layer need to be flated between phosphor layer and AI metal layer in anode electrode. After optimizing the anode phosphor layer, an anode layer with AI metal and inter layer increased the brightness and luminescence efficiency 1.2 times more than only phosphor laver in anode.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.12
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• pp.2258-2263
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• 2006

In this parer, hump characteristics of short-channel nMOSFETs induced by moistures of the ILD(inter-layer dielectric) layer in the shallow trench isolation (STI) process are investigated and the method for hump suppression is proposed Using nMOSFETs with various types of the gate and a measurement of TDS-APIMS (Thermal Desorption System-Atmospheric Pressure ionization Mass Spectrometry), hump characteristics were systematically analyzed and the systemic analysis based hump model was presented; the ILD layer over poly-Si gate of nMOSFET generates moistures, but they can't diffuse out of the SiN layer due to the upper SiN layer. Consequently, they diffuses into the edge between the gate and STI and induces short-channel hump. In order to eliminate moisture in the ILD layer by out-gassing method, the annealing process prior to the deposition of the SiN layer was carried out. As the result, short-channel humps of the nMOSFETs were successfully suppressed.

• International Journal of Industrial Entomology and Biomaterials
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• v.35 no.2
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• pp.71-76
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• 2017

The cocoon's color of silkworm, Bombyx mori L. is usually white. But some are yellow, flesh and green colors because of modified characteristics. The yellow and flesh cocoons depend on carotenoid pigments, green cocoons are determined by flavonoid pigments. The cocoon's color is affected by the genes controlling penetration process from midgut to coelom and silk gland. Y (Yellow blood, 2-25.6) and I (Yellow-inhibitor, 9-16.2) genes are involved in the penetration process of carotenoid pigments from midgut to coelom, C (Outer-layer yellow cocoon, 12-7.2) and F (Flesh, 6-13.6) genes from coelom to silk gland. Therefore, the carotenoid cocoon's color depends on the genotype Y, I, C and F genes and their combination. Among them, C gene is sympathetic gene, which are known as C, CI and CD. C (Outer-layer yellow cocoon) genes make yellow cocoons on outer-layer and white cocoons on inter-layer, and CI (Inner-layer yellow cocoon) genes do yellow cocoons on inter-layer and dilute yellow cocoons on outer-layer. CD gene is known as making dilute yellow cocoons all layer. In this study, we have checked the dominance relation of C sympathetic genes among carotenoid genes for color cocoons by using strains related to the genes for color cocoons and investigated the aspect that pigments were penetrated in silk gland by action of each gene.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.167-173
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• 2017

In this paper, the characterization of the vertical position of trapped charges in the charge-trap flash (CTF) memory is performed in the novel CTF memory cell with gate-all-around structure using technology computer-aided design (TCAD) simulation. In the CTF memories, injected charges are not stored in the conductive poly-crystalline silicon layer in the trapping layer such as silicon nitride. Thus, a reliable technique for exactly locating the trapped charges is required for making up an accurate macro-models for CTF memory cells. When a programming operation is performed initially, the injected charges are trapped near the interface between tunneling oxide and trapping nitride layers. However, as the program voltage gets higher and a larger threshold voltage shift is resulted, additional charges are trapped near the blocking oxide interface. Intrinsic properties of nitride including trap density and effective capture cross-sectional area substantially affect the position of charge centroid. By exactly locating the charge centroid from the charge distribution in programmed cells under various operation conditions, the relation between charge centroid and program operation condition is closely investigated.