• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.1-1
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• 2001

Microlasers grown on a chip without any distributed Brags reflectors to provide the feedback are potentially useful for integrated optics, particularly if the laser emission in the plane is unidirectional and this direction can be switched. Microfilters performing as add/drop devices and bandpass units are now considered the most needed optical element for the DWDM field. The talk will concentrate on our research effort in GaN microlasers with non-circular shapes and in dielectric microfilters with oval and square shapes. (omitted)

• Korean Journal of Optics and Photonics
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• v.18 no.3
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• pp.226-231
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• 2007

In this paper, we analyze the characteristics of various curved waveguides composed of double metal strips using finite difference method (FDM). Our investigation reveals that the bending loss of the double metal strip waveguide can be improved with less degradation of the straight waveguide's propagation loss compared to the single metal strip structure. Optimization of the double metal strip waveguide structure has been conducted considering bending and propagation losses.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.135-141
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• 2003

In arrayed waveguide grating (AWG) devices whose waveguides were composed of polymer with negative thermo-optic coefficient as overcladding, and silica with positive thermo-optic coefficient as both core and undercladding, we investigated the temperature dependence of the central wavelength using two-dimensional SFDM. From these results, it was confirmed that the temperature dependence can be nearly eliminated by adjusting the refractive index of the cladding and the thickness of the silica thin film upper-loaded on the core. Based on the numerical calculations, the AWG device with polymer overcladding was fabricated. and its optical characteristics were compared with those of the orginal silica AWG device. The introduction of polymer overcladding decreased the temperature dependence of the central wavelength from 0.0130 nm/$^{\circ}C$ to 0.0028 nm/$^{\circ}C$ without deteriorating the insertion loss and crosstalk characteristics.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.248-253
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• 2005

We designed and fabricated a compact multi-mode interference (MMI) wavelength demultiplexer using the concept of 'Improved Quasi-State' modes. The output power and extinction ratio were improved by utilizing modal phase error which is specially occurred in low-index contrast. For a designed demultiplexer, the mode propagation analysis with effective index approximation shows significant improvement of extinction ratio to -25 dB for both $1.31{\mu}m\;and\;1.51{\mu}m$ wavelength region and the split-length was reduced about 1/5 of other MMI devices. The fabricated device shows successful characteristics for both 1.31 and $1.55{\mu}m$ wavelengths. These results demonstrate the potential of low-index materials system and the embossing process for photonic integrated circuits.

• Current Optics and Photonics
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• v.7 no.2
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• pp.200-206
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• 2023

Near-infrared (NIR) sensing technology using CMOS image sensors is used in many applications, including automobiles, biological inspection, surveillance, and mobile devices. An intuitive way to improve NIR sensitivity is to thicken the light absorption layer (silicon). However, thickened silicon lacks NIR sensitivity and has other disadvantages, such as diminished optical performance (e.g. crosstalk) and difficulty in processing. In this paper, a pixel structure for NIR sensing using a stacked CMOS image sensor is introduced. There are two photodetection layers, a conventional layer and a bottom photodiode, in the stacked CMOS image sensor. The bottom photodiode is used as the NIR absorption layer. Therefore, the suggested pixel structure does not change the thickness of the conventional photodiode. To verify the suggested pixel structure, sensitivity was simulated using an optical simulator. As a result, the sensitivity was improved by a maximum of 130% and 160% at wavelengths of 850 nm and 940 nm, respectively, with a pixel size of 1.2 ㎛. Therefore, the proposed pixel structure is useful for NIR sensing without thickening the silicon.

• Journal of the Optical Society of Korea
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• v.20 no.2
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• pp.291-299
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• 2016

We have investigated the ultimate limits of nonuniform grating couplers (NGCs) for optimized fiber coupling to silicon waveguides, compared to uniform grating couplers (UGCs). Simple grating coupler schemes, which can be fabricated in etching steps of the conventional complementary metal-oxide semiconductor (CMOS) process on silicon-on-insulator (SOI) wafers without forming any additional overlay structure, have been simulated numerically and demonstrated experimentally. Optimum values of the grating period, fill factor, and groove number for ultimate coupling efficiency of the NGCs are determined from finite-difference time-domain (FDTD) simulation, and confirmed with experimentally demonstrated devices by comparison to those for the UGCs. Our simulated results indicate that maximum coupling efficiency of NGCs is possible when the minimum pattern size is below 50 nm, but the experimental value for the maximum coupling efficiency is limited by the attainable fabrication tolerance in a practical device process.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.33-37
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• 2013

LCPV modules under 5 suns consist of reflective optics and receiver modules, similar to a typical fixed concentration PV module. If they are to be used as a compound parabolic concentrator, which is filled with a dielectric material, a compact plate structure of the fixed CPV can be designed and built at a large acceptance angle. These types of flat-$plate{\mu}$-LCPV modules are suitable for building integrated photovoltaic modules, facade applications, mobile devices, and small home appliances. Therefore, in this study, the possibilities for other application devices were studied and presented by designing and fabricating LCPCs for CPV modules.

• Korean Journal of Optics and Photonics
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• v.16 no.4
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• pp.376-383
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• 2005

We designed and fabricated integrated-optic tunable polarization controllers based on $LiNbO_3$ with the Ti-indiffused waveguide along the y-axis utilizing the electro-optic effect. The device consists of $TE↔TM$ mode converters and TE/TM phase shifters. We analyzed the operation principles of each device utilizing transfer matrices based on a Jones matrix and simulated shifting of the center wavelength by inducing voltage. We confirmed experimentally that the fabricated devices control the tunability of the center wavelength and the input SOP.

• Korean Journal of Optics and Photonics
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• v.4 no.3
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• pp.294-300
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• 1993

Monolithic NOR and INVERTER active optical logic devices inte- grated with surface-emitting microlasers, heterojunction photo- transistors(HPT) in parallel and resistors in series are characterized. The differential quantum efficiency of the typical AlGaAs superlattice microlaser integrated in the active optical logic devices is 15%. Current gain of the HPT is 57, when emitter-collector voltage and input optical power are 4 V and $50{\mu}W$, respectively. $57{\mu}W$ of output power from the active optical logic device decreases to zero when $47{\mu}W$ of input optical power is incident on the HPT part of the active logic device.

• Korean Journal of Optics and Photonics
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• v.22 no.6
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• pp.256-261
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• 2011

In this paper, a variable optical signal delay line based on coupled ring resonators is designed and fabricated in high-index contrast polymer material. The free spectral ranges (FSR) of the rings are designed to be 100 GHz, and 8 coupled rings are used. When two rings near a bus waveguide are in resonance, the optical delay is measured to be about 100 ps. When four rings are in resonance, the measured delay is about 180 ps. Both are close to the theoretical calculations.