• ETRI Journal
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• 제27권2호
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• pp.133-139
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• 2005

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 ${\mu}$ gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2mm${\times}$ 2mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1mm${\times}$ 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2mm ${\times}$ 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W-band.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1035-1037
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• 2005

2.32-inch $320{\times}350$ TFT-LCD with high resolution (206PPI) for advanced mobile phones could be successfully developed. The compact pixel design based on PMOS SLS technique is used to achieve this high resolution. Gate driver and part of data driver are integrated onto the glass substrate. High brightness (170cd) and contrast ratio (400:1) were obtained with very low flickering and crosstalk levels.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.52-55
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• 2006

The driving-current degradation of a-Si:H thin-film transistor(TFT) device has been analyzed for the first time. A method to analyze the performance of TFT circuits is presented, which is different from the conventional one by threshold voltage shift method. It can be also used to evaluate the performance of gate driver on array (GOA) circuit, which is integrated in a 12.1" WXGA ($1280{\ast}3{\ast}800$) TFT-LCD panel.

• ETRI Journal
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• 제20권1호
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• pp.37-45
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• 1998

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.

• 한국컴퓨터정보학회논문지
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• 제12권4호
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• pp.249-256
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• 2007

본 논문에서는 휴대 가능한 중소형($4{\sim}9$인치 크기)의 정보단말기에 사용되는 TFT-LCD(Thin Film Transistor addressed -Liquid Crystal Display)의 LDI(LCD Driver Interface) 제어기(controller)를 제조사와 크기에 관계없이 사용할 수 있는 표준화된 범용 TFT-LCD의 LDI를 설계하고 FPGA(Field Programmable Gate Array)로 구현하였다. 설계한 LDI 제어기는 FPGA 테스트 보드(test board)에서 검증하였으며, 상업용 TFT-LCD 패널에서 시험결과 안정적으로 상호 동작하였다. 설계한 범용 LDI 제어기의 장점은 LCD의 제조사와 크기에 관계없이 그 동작을 표준화시켜 설계하였으므로 향후 모든 패널내의 SoG(System on a Glass) 모듈 설계에 적용할 수 있는 것이다. 그리고 기존의 방식에서는 LCD 제조사별, 패널 크기별로 별개의 LDI 제어기 칩을 개발하여 사용하지만, 설계한 LDI 제어기는 모든 휴대 가능한 중소형 패널을 구동시킬 수 있어서 IC의 공급가, AV 보드와 패널의 제조 원가 하락을 가져올 수 있으며 가까운 장래에는 보다 우수한 기능의 패널을 제작하기 위한 TFT-LCD 패널 모듈의 SoG 개발이 필연적으로 요구되고 있다. 연구결과는 TFT-LCD 패널을 더욱 소형화, 경량화 그리고 저가격화가 가능하여 기술 및 시장 경쟁력을 선점할 수 있다. 또한 향후 많은 수요가 예상되는 이동형 정보단말기에 사용되는 TFT-LCD 패널 모듈의 SoG IC(Integrated Circuit) 개발과 제작을 위한 기초 자료로서 활용될 수 있다.

• 대한전자공학회논문지SD
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• 제47권5호
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• pp.71-79
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• 2010

본 논문은 LLC 공진 제어 IC(Integrated Circuit) 설계에 관한 것이다. LLC 공진 제어 IC는 DC/DC 변환하기 위해서 외부의 공진 회로에 입력되는 주파수를 조정하여 트랜스포머를 통해서 2차 측의 출력 전압을 조정한다. 공진회로에 펄스를 공급하기 위한 클럭 생성기가 내장되어 있고, 클럭 주파수는 외부 저항을 사용하여 튜닝이 가능하다. 또한 외부 피드백 입력되는 전압을 이용해 주파수 조정이 가능하도록 VCO(Voltage Controlled Oscillator) 기능을 내장하였다. 동작의 신뢰성을 높이고 회로를 보호하기 위해서 UVLO(Under Voltage Lock Out), brown out, fault detector의 보호회로를 내장하였고, 입력 커패시턴스가 큰 용량의 IGBT(Insulated Gate Bipolar Transistor)를 구동하기 위해서 높은 전압, 전류의 제공이 가능한 HVG(High Side Driver), LVG(Low Side Driver) 드라이버 회로를 내장하였다. LLC 공진 제어 회로를 하나의 칩으로 구현하여 LLC 공진 회로를 제어하는데 있어 필요한 회로들을 설계하였다. 설계한 LLC 공진 제어 IC는 0.35 um 2P3M BCD 공정으로 제작하였다. 칩의 면적은 $1400um{\times}1450um$ 이고, 5V, 15V 두 가지의 전원 전압을 사용한다.

• Journal of Power Electronics
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• 제16권3호
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• pp.1209-1217
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• 2016

This paper presents a novel charge pump scheme that combines the advantages of Fibonacci and Dickson charge pumps to obtain 30 V voltage for display driver integrated circuit application. This design only requires four external capacitors, which is suitable for a small-package application, such as smart card displays. High-amplitude (<6.6 V) clocks are produced to enhance the gate drive of a Dickson charge pump and improve the system's current drivability by using a voltage-doubler charge pump with a pulse skip regulator. This regulation engages many middle-voltage devices, and approximately 30% of chip size is saved. Further optimization of flying capacitors tends to decrease the total chip size by 2.1%. A precise and simple model for a one-stage Fibonacci charge pump with current load is also proposed for further efficiency optimization. In a practical design, its voltage error is within 0.12% for 1 mA of current load, and it maintains a 2.83% error even for 10 mA of current load. This charge pump is fabricated through a 0.11 μm 1.5 V/6 V/32 V process, and two regulators, namely, a pulse skip one and a linear one, are operated to maintain the output of the charge pump at 30 V. The performances of the two regulators in terms of ripple, efficiency, line regulation, and load regulation are investigated.

• ETRI Journal
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• 제37권6호
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• pp.1165-1175
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• 2015

This paper presents an advanced sensorless permanent magnet (PM) brushless motor controller integrated circuit (IC) employing an automatic lead-angle compensator. The proposed IC is composed of not only a sensorless sine-wave motor controller but also an isolated gate-driver and current self-sensing circuit. The fabricated IC operates in sensorless mode using a position estimator based on a sliding mode observer and an open-loop start-up. For high efficiency PM brushless motor driving, an automatic lead-angle control algorithm is employed, which improves the efficiency of a PM brushless motor system by tracking the minimum copper loss under various load and speed conditions. The fabricated IC is evaluated experimentally using a commercial 200 W PM brushless motor and power switches. The proposed IC is successfully operated without any additional sensors, and the proposed algorithm maintains the minimum current and maximum system efficiency under $0N{\cdot}m$ to $0.8N{\cdot}m$ load conditions. The proposed IC is a feasible sensorless speed controller for various applications with a wide range of load and speed conditions.

• Journal of Power Electronics
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• 제11권3호
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• pp.271-278
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• 2011

This paper presents a LLC resonant controller IC for secondary side control without external active devices to achieve low profile and low cost LED back light units. A gate driving transformer is adopted to isolate the primary side and the secondary side instead of an opto-coupler. A new integrated dimming circuitry is proposed to improve the dynamic current control characteristic and the current density of a LED for the brightness modulation of a large screen LCD. A dual-slope clock generator is proposed to overcome the frequency error due to the under shoot in conventional approaches. This chip is fabricated using 0.35 ${\mu}m$ BCD technology and the die size is $2{\times}2\;mm^2$. The frequency range of the clock generator is from 50 kHz to 500 kHz and the range of the dead time is from 50 ns to 2.2 ${\mu}s$. The efficiency of the LED driving circuit is 97 % and the current consumption is 40 mA for a 100 kHz operation frequency from a 15 V supply voltage.