• 제목/요약/키워드: insulating breakdown

검색결과 266건 처리시간 0.032초

알루미늄 판상에 글라스 세라믹 후막이 코팅된 절연금속기판의 제조 및 절연특성 (Fabrication and Electrical Insulation Property of Thick Film Glass Ceramic Layers on Aluminum Plate for Insulated Metal Substrate)

  • 이성환;김효태
    • 마이크로전자및패키징학회지
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    • 제24권4호
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    • pp.39-46
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    • 2017
  • 본 연구는 평판형 히터용 금속방열판상의 세라믹 절연층 제조, 즉 절연성 금속기판에 관한 것이다. 반도체나 디스플레이의 열처리 공정 등에 사용되는 평판형 히터를 제조함에 있어서, 온도 균일도를 높이기 위해 금속 방열판으로서 열전도율이 높고, 비교적 가벼우며, 가공성 좋은 알루미늄 합금 기판이 선호된다. 이 알루미늄 기판에 발열 회로 패턴을 형성하기 위해서는 금속 기판에 절연층으로서 고온 안정성이 우수한 세라믹 유전체막을 코팅하여야 한다. 금속 기판상에 세라믹 절연층을 형성함에 있어서 가장 빈번히 발생하는 첫 번째 문제는 금속과 세라믹의 이종재료 간의 큰 열팽창계수 차이와 약한 결합력에 의한 층간박리 및 균열발생이다. 두 번째 문제는 절연층의 소재 및 구조적 결함에 따른 절연파괴이다. 본 연구에서는 이러한 문제점 해소를 위해 금속소재 기판과 세라믹 절연층 사이에 완충층을 도입하여 이들 간의 기계적 매칭과 접합력 개선을 도모하였고, 다중코팅 방법을 적용하여 절연막의 품질과 내전압 특성을 개선하고자 하였다.

고전압 β-산화갈륨(β-Ga2O3) 전력 MOSFETs (High Voltage β-Ga2O3 Power Metal-Oxide-Semiconductor Field-Effect Transistors)

  • 문재경;조규준;장우진;이형석;배성범;김정진;성호근
    • 한국전기전자재료학회논문지
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    • 제32권3호
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    • pp.201-206
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    • 2019
  • This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

강유전체를 게이트 절연층으로 한 수소화 된 비정질실리콘 박막 트랜지스터 (a-Si:H TFT Using Ferroelectrics as a Gate Insulator)

  • 허창우;윤호군;류광렬
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2003년도 추계종합학술대회
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    • pp.537-541
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    • 2003
  • 강유전체(SrTiO$_3$) 박막을 게이트 절연층으로 하여 수소화 된 비정질 실리콘 박막 트랜지스터를 유리 기판위에 제조하였다. 강유전체는 기존의 SiO$_2$, SiN 등과 같은 게이트 절연체에 비하여 유전특성이 매우 뛰어나 TFT의 ON 전류를 증가시키고 문턱전압을 낮추며 항복특성을 개선하여 준다. PECVD 에 의하여 증착된 a-Si:H 는 FTIR 측정 결과 2,000 $cm^{-}$1 과 635 $cm^{-}$l 및 876 cm-1 에서 흡수 밴드가 나타났으며, 2,000 $cm^{-1}$ / 과 635 $cm^{-1}$ / 은 SiH$_1$ 의 stretching 과 rocking 모드에 기인 한 것이며 876 $cm^{-1}$ / 의 weak 밴드는 SiH$_2$ vibration 모드에 의한 것이다. a-SiN:H 는 optical bandgap 이 2.61 eV 이고 굴절률은 1.8 - 2.0, 저항률은 $10^{11}$ - $10^{15}$ $\Omega$-cm 정도로 실험 조건에 따라 약간 다르게 나타난다. 강유전체(SrTiO$_3$) 박막의 유전상수는 60 - 100 정도이고 항복전계는 1MV/cm 이상으로 우수한 절연특성을 갖고 있다. 강유전체를 이용한 TFT 의 채널 길이는 8 - 20 $\mu$m, 채널 넓이는 80 - 200 $\mu$m 로서 드레인 전류가 게이트 전압 20V에서 3 $\mu$A 이고 Ion/Ioff 비는 $10^{5}$ - $10^{6}$, Vth 는 4 - 5 volts 이다.

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Metal PCB에 있어서 양극산화법으로 제작한 Al2O3절연막의 방열특성 (Heat dissipation of Al2O3 Insulation layer Prepared by Anodizing Process for Metal PCB)

  • 조재승;김정호;고상원;임실묵
    • 한국표면공학회지
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    • 제48권2호
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    • pp.33-37
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    • 2015
  • High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with high thermal conductive materials such as metal or ceramics. Through anodizing the upper layer of Al, the Breakdown Voltage of 3kV was obtained by using an uniform thickness of $60{\mu}M$ aluminum oxide($Al_2O_3$) and was carried out to determine the optimum process conditions when thermal cracking does not occur. Two Ni layers were formed above the layer of $Al_2O_3$ by sputtering deposition and electroplating process, and saccharin was added for the purpose of minimizing the remain stress in electroplating process. The results presented that the 3-layer film including the Ni layer has an adhesive force of 10N and the thermal conductivity for heat dissipation is achieved by 150W/mK level, and leads to improvement about 7 times or above in thermal conductivity, as opposed to the organic insulation layer.

고온 초전도 변압기 설계를 위한 극저온환경에서 DC/AC의 절연지별 절연파괴 특성연구 (Study on the Comparison between DC and AC for Breakdown Characteristics of Dielectric Insulating Materials for Design of HTS Transformer in Cryogenic Environment)

  • 박태건;이상화;신우주;성재규;오석호;황재상;이방욱
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2011년도 제42회 하계학술대회
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    • pp.1564-1565
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    • 2011
  • 고온 초전도(HTS) 변압기는 절연수명의 손실 없이 과부하 용량의 증가와 효율의 향상이 가능하여 기존의 변압기와는 달리 구조물의 소형화로 공간 배치가 용이하고 환경 친화적 이어서 전력시스템 운용 전반에 걸쳐 많은 이점을 제공한다. 하지만, 이러한 이점에도 불구하고 AC전압이 인가되었을 때, 교류손실에 의한 심각한 효율의 감소는 불가피하다. 따라서, HTS 변압기뿐만 아니라 고온초전도전력기기들에 대한 DC전압의 적용은 초전도상에서 전기적 저항이 거의 0이라는 큰 이점을 가지고 있기 때문에 초전도 전력기기 시스템에서 최선의 선택으로 여기어지고 있다. 그러므로 DC고온초전도 전력기기들을 개발하기 위해서는 극저온상에서의 DC 절연 특성과 같은 기초연구들이 선행 되어야 한다. 그러나, 지금까지 이 분야에 대한 연구가 많이 부족한 실정이다. 본 논문에서는 현재 초전도 전력기기의 대표적인 절연 매질인 Kraft, Kapton(Polymide)와 Nomax(Type 410)을 가지고 권선대 권선의 형상을 모의하여 DC와 AC의 절연파괴 특성의 차이점을 분석하였다. 실험의 결과로부터, 극저온상에서 각각의 절연매질에 따른 DC와 AC의 절연파괴 특성을 확인할 수 있었다.

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An Electrochemical Enzyme Immunochip Based on Capacitance Measurement for the Detection of IgG

  • Yi, Seung-Jae;Choi, Ji-Hye;Kim, Hwa-Jung;Chang, Seung-Cheol;Park, Deog-Su;Kim, Kyung-Chun;Chang, Chulhun L.
    • Bulletin of the Korean Chemical Society
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    • 제32권4호
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    • pp.1298-1302
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    • 2011
  • This study describes the development of an electrochemical array immunochip for the detection of IgG. Interdigitated immunochip platforms were fabricated by sputtering gold on a glass wafer by using MEMS process and then were coated with Eudragit S100, an enteric polymer, forming an insulating layer over the working area of immunochips. The breakdown of the polymer layer was exemplified by the catalytic action of urease which, in the presence of urea, caused an alkaline pH change. This subsequently caused an increase of the double layer capacitance of the underlying electrode. Used in conjunction with a competitive immunoassay format, this allowed the ratio of initial to final electrode capacitance to be directly linked with the concentration of analyte, i.e. IgG. Responses to IgG could be detected at IgG concentration as low as $250\;ngmL^{-1}$ and showed good linearity up to IgG concentration as high as $20\;{\mu}gmL^{-1}$.

22.9[kV]이하 XLPE 전력케이블의 열 충격 시험 및 절연파괴 특성 (The Properties of Dielectric Breakdown and Thermal Stresses below 22.9[kV] Class XLPE Power Cable)

  • 김영석;송길목;김선구
    • 조명전기설비학회논문지
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    • 제22권4호
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    • pp.54-60
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    • 2008
  • 2002년부터 시행되어오고 있는 제조물 책임법에 의해 사고케이블의 원인분석과 사고패턴에 대한 데이터베이스화가 중요하다. 더욱이 가속열화상태에서 전력케이블 사고의 패턴 및 모의실험은 데이터베이스 시스템 구축에 필요하다. 본 논문에서는 열 열화 따른 22.9[kV]이하 케이블의 열 충격시험을 수행하였다. 이 시험은 IEC60811-3-1에 따른다. 시험결과로부터, 22.9[kV]급 A사 전력케이블은 표면이 변색되었고 길이방향으로 급격하게 감소되었다. 특히, A사 전력케이블의 열 중량 특성이 심하게 변함에 따라, 케이블 제조상의 문제일 것이라 추측된다. 만약 전력케이블의 제조상의 결함에 의한 것이라면, 피해자들은 PL환경 하에 손해배상을 받을 수 있을 것이다.

Effect of an Electric Field on the AC Electrical Treeing in Various Epoxy/Reactive Diluent Systems

  • Bang, Jeong-Hwan;Park, Jae-Jun
    • Transactions on Electrical and Electronic Materials
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    • 제14권6호
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    • pp.308-311
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    • 2013
  • The effect of an electric field on the ac electrical treeing in various epoxy/reactive diluent systems was studied in a needle-plate electrode geometry. Diglycidyl ether of bisphenol A (DGEBA) type epoxy was used as a base resin, and 1,4-butanediol diglycidyl ether (BDGE) or polyglycol (PG) as a reactive diluent was introduced to the DGEBA system, in order to decrease the viscosity of the DGEBA epoxy system. BDGE was acted as a chain extender, and PG acted as a flexibilizer, after the curing reaction. To measure the treeing initiation time and the propagation rate, three constant alternating currents (ac) of 10, 13 and 15 kV/4.2 mm (60 Hz) were applied to the specimen, in a needle-plate electrode arrangement, at $30^{\circ}C$ of insulating oil bath. When 10 kV/4.2 mm (60 Hz) was applied, the treeing initiation time and the propagation rate in the DGEBA system were 356 min and $1.10{\times}10^{-3}$ mm/min, respectively, those in the DGEBA/BDGE system were 150 min and $1.14{\times}10^{-3}$ mm/min, respectively. Those in the DGEBA/PG system were 469 min and $1.05{\times}10^{-3}$ mm/min, respectively. As 15 kV/4.2 mm (60 Hz) was applied, the propagation rate in the DGEBA system was $5.41{\times}10^{-3}$ mm/min, and that in the DGEBA/PG system was $1.42{\times}10^{-3}$ mm/min. These values meant that PG could be used as a reactive diluent in the DGEBA system, without the deterioration of the insulation breakdown property.

High-Performance Buildings 구현을 위한 신기술 연구 동향 및 에너지 절감 효과 평가 (Review of New Technologies' Energy Conservation Rate in High-Performance Buildings)

  • 김철호;양자강;이승언;유기형;김강수
    • KIEAE Journal
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    • 제16권1호
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    • pp.57-65
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    • 2016
  • Purpose: The purpose of this study is to analyze the energy performance by applying new technologies for passive and active control. Method: We selected new technologies for passive and active control which are based on formal study by analyzing technology applied to the High-Performance Buildings in various countries. Also, we analyzed energy saving potential for each technologies by breakdown the result of the energy saving rates in detail. Result: For the wall and roof insulating methods, preceding studies showed that up to 21% energy could be saved by improving roof insulation and applying proper outside insulation compared to non-insulation. For the windows and glazing system, preceding studies showed that Low-E glazing system could save up to 11% energy compared to single glazing system. Studies about solar and daylighting controls revealed that effective daylighting dimming control could save 13% of energy compared to uncontrolled situation. Studies on DOAS (Dedicated Outdoor Air System) showed that about 23% energy could be saved compared to standard VAV system. Studies on the active chilled beam showed that about 25% energy could be saved compared to standard VAV system and studies of applying UFAD (Under Floor Air Distribution) could consume 31% less energy than applying overhead system.

Effect of Phosphoric Acid on the Electronic and Diffusion Properties of the Anodic Passive Layer Formed on Pb-1.7%Sb Grid of Lead-acid Batteries

  • El-Rahman, H.A. Abd;Salih, S.A.;El-Wahab, A.M. Abd
    • Journal of Electrochemical Science and Technology
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    • 제2권2호
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    • pp.76-84
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    • 2011
  • Potentiostatic oxidation of Pb-1.7%Sb alloy used in the manufacture of grids of lead-acid batteries over the potential range from -1.0V to 2.3V in 5M $H_2SO_4$ in the absence and the presence of 0.4M $H_3PO_4$ and the self-discharge characteristics of the oxide layer formed is studied by electrochemical impedance spectroscopy (EIS). Depending on the potential value, sharp variations in resistance and capacitance of the alloy are recorded during the oxidation and they can be used for identification of the various substances involved in passive layer. Addition of $H_3PO_4$ is found to deteriorate the insulating properties of the passive layer by the retardation of the formation of $PbSO_4$. $H_3PO_4$ completely inhibits the current and impedance fluctuations recorded in $H_3PO_4$-free solutions in the potential range 0.5 V-1.7 V. These fluctuations are attributed to the occurrence of competitive redox processes that involve the formation of $PbSO_4$, $PbOSO_4$, PbO and $PbO_2$ and the repeated formation and breakdown of the passive layer. Self-discharge experiments indicate that the amount of $PbO_2$ formed in the presence of $H_3PO_4$ is lesser than in the $H_3PO_4$-free solutions. The start of transformation of $PbSO_4$ into $PbO_2$ is greatly shortened. $H_3PO_4$ facilitates the diffusion process of soluble species through the passive layer ($PbSO_4$ and basic $PbSO_4$) but impedes the diffusion process through $PbO_2$.