• 공학논문집
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• 제6권2호
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• pp.33-38
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• 2004

To investigate the reliability of the MTJs on the roughness of insulating tunnel barrier, we prepared two MTJs with the different uniformity of barrier thickness. Namely, the one has uniform insulating barrier thickness; the other has non-uniform insulating barrier thickness as compared to different thing. As to depositing amorphous layer CoZrNb under the pinning layer IrMn, we achieved MTJ with uniform barrier thickness. Toinvestigate the reliability of the MTJs dependent on the bottom electrode, time-dependent dielectric breakdown (TDDB) measurements were carried out under constant voltage stress. The Weibull fit of out data shows clearly that $t_{BD}$ scales with the thickness uniformity of MTJs tunnel barrier. Assuming a linear dependence of log($t_{BD}$) on stress voltages, we obtained the lifetime of $10^4$years at a operating voltage of 0.4 V at MTJs comprising CoNbZr layers. This study shows that the reliabilityof new MTJs structure was improved due to the ultra smooth barrier, because the surface roughness of the bottom electrode influenced the uniformity of tunnel barrier.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.76.1-76.1
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• 2010

Furnace를 이용한 $POCl_3$ 확산 공정은 실리콘 태양전지 제작과정에서 일반적으로 이용되는 에미터 층 형성 공정이다. 하지만, 확산 공정을 통해 P-N Junction을 형성할 경우 전면과 후면의 contact현상이 발생하게 되고 이를 제거하기 위해 Edge isolation 공정을 거치게 된다. 최근에는 레이저로 V 모양의 홈을 형성하는 방법이 이용되고 있다. 본 연구에서는 p-type 실리콘 웨이퍼 기판에 insulating barrier를 형성하여 edge isolation 공정을 없앤 Non-edge isolation공정을 제시한다. Non p-type 실리콘 웨이퍼에 insulating barrier를 형성한다. Insulating barrier가 형성된 BOE용액과 KOH에서의 견딤성 실험을 진행 하였다. 이후, p-type 단결정 실리콘 태양전지의 확산 공정을 진행하여 Non edge isolation 공정을 진행한 경우와 laser를 이용한 edge isolation 공정을 진행한 태양전지를 제작하여 특성을 비교하였다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2003년도 somma/kms meeting
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• pp.93-93
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• 2003

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 하계학술연구발표회 논문개요집
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• pp.100-101
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• 2005

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.286-290
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• 2020

The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.

• 전기전자학회논문지
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• 제23권3호
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• pp.811-816
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• 2019

초고진공 화학기상증착장치(UHV-CVD)에 의해 성장된 실리콘-흡착된 산소(Si-O) 초격자가 실리콘 양자전자소자를 위한 에피택셜 장벽으로 소개되었다. 전류-전압 측정 결과 높은 브레이크다운 전압을 갖는 매우 안정하고 양호한 절연특성을 나타내었다. 에피택셜 성장된 Si-O 초격자는 SOI(silicon on insulator)를 대체할 수 있는 절연층으로도 사용될 수 있음을 보여준다. 이 두꺼운 장벽은 전계효과트랜지스터(FET)의 절연 게이트로 유용하게 사용될 수 있어 FET 위에 또 다른 FET를 제작할 수 있으므로 미래 실리콘계 3차원 집적회로의 궁극적인 목표에 한층 더 다가갈 수 있는 가능성을 보여주는 것이다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1998년도 추계학술발표회 초록집
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• pp.33-34
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• 1998

• 전기의세계
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• 제19권2호
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• pp.12-17
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• 1970

In the design of electrical equipment insulation, it is customary to place pressboard and other insulating material at right angle to the electrical discharge path, which is based on the insulation tests performed on equipment under various conditions such as types of insulation, applied voltage and other unique situations. Since electrical equipment manufacturing started only recently, there is a scarcity of available data on insulation problems, which make it difficult for the design engineers. The author untook this study to provide such analytical design data for various conditions based on the experiment conducted on the equipment being manufactured, thus reducing possible errors in the process.

• 한국초전도ㆍ저온공학회논문지
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• 제8권1호
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• pp.45-48
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• 2006

In the response to the demand for electrical energy , much effort was given to develop and commercialize high temperature superconducting (HTS) power equipments has been made around the world. Especially, HTS transformer is one of the most promising devices . but the cryogenic insulation technology should be established during development Hence many types of dielectric tests should be carried out to understand the dielectric phenomena at cryogenic temperature and to gather various dielectric data. Among the many types dielectric tests . the characteristic of barrier effect were conducted using simulated electrode after analysing the insulating configuration of HTS transformer main winding. The influence of a barrier on the dielectric strength was measured according to the position of the harriet the number of the barrier and thickness or the barrier. It was shown that the effectiveness . namely the ratio of the breakdown voltage in presence of barrier to the voltage without barrier, is highest when the barrier is placed at the needle electrode side. On the contrary, in the case of having the barrier between the electrodes, the harrier was placed between the electrodes the characteristic was even improved slightly.

• 전기의세계
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• 제17권3호
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• pp.7-28
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• 1968

When a insulator plate is inserted to the discharge path of a space discharge gap in which the field strength is not uniform, the spark voltage under the atmospheric pressure between the electrodes decreases or rises according to the position of the insulating plate. Also it is reported that if a metallic barrier plate is inserted to the discharge path of the same space discharge gap, similar variations of spark voltage are found. Speaking briefly, mensioned above are the spark voltage characteristics when an insulator or metallic barrier is inserted to the space discharge gap. Also some experimental results, concerning to the surface creepage flash over characteristics at the case when an insulator barrier is inserted to the discharge path of a surface creepage discharge gap, were reported by Peek. But up to now there are no reports on surface flash over voltage characteristics at the case when a metallic barrier is inserted to the surface creepage gap. In this study the effects of a conducting metallic barrier inserted to the path of a surface creepage discharge gap on the flash over voltage characteristics are investigated theoretically and experimentally, and got some important results, clearing the effects of the position and width of a conducting barrier is inserted, the surface flash over voltage characteristics appear as an Inverse N or W Characteristics. Such theoretical or experimental results may have some relation not only with the effects of dry belt and snow on suspension insulators, but also with the effects of dirty zone or water drops on the surface creepage flash over voltage.