• 제목/요약/키워드: insertion layer

검색결과 246건 처리시간 0.026초

폴리(옥틸티오펜)/풀러렌 벌크 이종접합의 광기전성에 미치는 CIS 입자의 블렌딩 효과 (The Blending Effect of Electro-deposited Copper-indium-diselenide Particles on the Photovoltaic Properties of Poly(3-octylthiophene)/Fullerene Bulk Heterojunction Cells)

  • 조영돈;이선형;김정수
    • 폴리머
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    • 제34권1호
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    • pp.84-87
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    • 2010
  • 구리, 인디움, 셀레늄 이온을 포함한 혼합물을 전기화학적으로 환원하는 1회 반응으로 CIS 입자를 합성하였다. 합성된 입자를 폴리(옥틸티오펜/풀러렌으로 구성된 벌크이종접합에 블렌딩하거나 박막층으로 삽입하여 여러 가지 광기전셀을 제조하였다. CIS의 함량이 증가할수록 개방전압과 단락전류의 급격한 감소가 일어났다. 이러한 광기전성의 감소현상을 블렌드의 구조, 조성, 모폴로지를 분석 해석하였다.

Effect of Carbon-coated Silicon/Graphite Composite Anode on the Electrochemical Properties

  • Kim, Hyung-Sun;Chung, Kyung-Yoon;Cho, Byung-Won
    • Bulletin of the Korean Chemical Society
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    • 제29권10호
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    • pp.1965-1968
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    • 2008
  • The effects of carbon-coated silicon/graphite (Si/Gr.) composite anode on the electrochemical properties were investigated. The nanosized silicon particle shows a good cycling performance with a reasonable value of the first reversible capacity as compared with microsized silicon particle. The carbon-coated silicon/graphite composite powders have been prepared by pyrolysis method under argon/10 wt% propylene gas flow at $700{^{\circ}C}$ for 7 h. Transmission electron microscopy (TEM) analysis indicates that the carbon layer thickness of 5 nm was coated uniformly onto the surface silicon powder. It is confirmed that the insertion of lithium ions change the crystalline silicon phase into the amorphous phase by X-ray diffraction (XRD) analysis. The carbon-coated composite silicon/graphite anode shows excellent cycling performance with a reversible value of 700 mAh/g. The superior electrochemical characteristics are attributed to the enhanced electronic conductivity and low volume change of silicon powder during cycling by carbon coating.

청색 인광물질을 이용한 유기 발광 다이오드의 효율개선에 관한 연구 (A study on the improvement in the efficiency of blue phosphorescent organic light-emitting diodes)

  • 양미연;김준호;하윤경;김영관
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.1070-1073
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    • 2004
  • In this study, Tri(1-phenylpyrazolato)iridium $(Ir(ppz)_3)$ was prepared for the pure blue phosphorescent dopant and various host materials were used for the appropriate energy alignment. Although the luminance was pure blue with the CIE coordinates of x = 0.158, y = 0.139, device efficiencies didn't improve yet. Instead of finding the proper host materials, the alteration of structure of OLEDs affected the improvement of electrical and optical characteristics of the devices. It was worthy that insertion the exciton formation zone with the host material between the emitting zone and the exciton blocking layer. The device with a structure of ITO/NPB/Ir(ppz)3 doped in CBP/CBP for the exciton formation zone/BCP/Liq/Al was fabricated and the characteristics were observed compared with the devices without the exciton formation zone. When CBP was used for the exciton formation zone, the device efficiency reached to over 0.25 cd/A. While the device used CBP only for the host showed the luminous efficiency of under 0.11 cd/A

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Study for improvement of grounds subjected to cyclic loads

  • Mittal, Satyendra;Meyase, Kenisevi
    • Geomechanics and Engineering
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    • 제4권3호
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    • pp.191-208
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    • 2012
  • Due to rapid industrialisation, large scale infrastructure development is taking place worldwide. This includes railways, high speed highways, elevated roads etc. To meet the demands of society and industry, many innovative techniques and materials are being developed. In developed nations like USA, Japan etc. for railways applications, new material like geocells, geogrids are being used successfully to enable fast movement of vehicles. The present research work was aimed to develop design methodologies for improvement of grounds subjected to cyclic loads caused by moving vehicles on roads, rail tracks etc. Deformation behavior of ballast under static and cyclic load tests was studied based on square footing test. The paper presents a study of the effect of geo-synthetic reinforcement on the (cumulative) plastic settlement, of point loaded square footing on a thick layer of granular base overlying different compressible bases. The research findings showed that inclusion of geo-synthetics significantly improves the performance of ballasted tracks and reduces the foundation area. If the area is kept same, higher speed trains can be allowed to pass through the same track with insertion of geosynthetics. Similarly, area of machine foundation may also be reduced where geosynthetics is provided in foundation. The model tests results have been validated by numerical modeling, using $FLAC^{3D}$.

EFT IEC801-4 대책용 전원케이블의 개발에 관한 연구 (A study on development of Power Cable countermeasuring EFT IEC801-4)

  • 김형근;배대환;민경찬;김동일
    • 한국항해학회지
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    • 제19권2호
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    • pp.107-113
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    • 1995
  • Since the most of the mal-functions in the industrial equipments controlled by processors have been occured by the Electrical Fast Transient(EFT), the International Electrotechnical Commision(IEC) prepare the dummy signal to test the immunity level of the equipments controlled by processors and recommend it for the measuring. In this paper, the defined dummy EFT signal by IEC are analyzed by the spectrum analyzer in the frequency domain and studied the developed countermeasuring parts. The new developed parts are consist of the feedthrough capacitors ( $C_y$ type ) in the input and materials with high permeaility which was wound or inserted in the second layer of the Power Cable in order to increase Common Mode inductance. And it is compared inserted Permalloy to material with high permeability increasing Common Mode inductance. We could gotten a excellent insertion loss on the wide band against EFT signal. Especially, we confirm that countermeasuring Power Cable have been an excellent dynamic characteristics in computer system above the 3.6Kv. This new parts could be effectively used for industrial, MIL, and medical equipments to reduce a mal-functions on the site. Furthermore, these parts also have a good characteristics for EMI countermeasuring over the 60MHz up to several GHz band, they are also expected to be used for all kind of EMS test with IEC801-2, 3, 5 and 6 on the power distributed line.

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IEEE P802.3ba 기반의 40 Gb/s 백플레인 이더넷 전송채널의 설계 (A Design of Transmission Channel for 40Gb/s backplane Ethernet based on IEEE P802.3ba)

  • 양충열;김광준;김환우
    • 한국통신학회논문지
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    • 제35권4B호
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    • pp.637-646
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    • 2010
  • 본 논문에서는 40 인치 까지의 FR-4 백플레인 트레이스를 통해 40 Gb/s 데이터 전송을 위해서 10 Gb/s 4 래 인으 로 구성되는 백플레인 채널 모델을 설계하였다. 시뮬레이션 결과에서 10 Gb/s 데이터 속도에서 IEEE P 802.3ba 표준에서 규정하는 요구사항보다 더 나은 백플레인 채널 특성을 확인하였다. 본 논문에서 제시한 유형의 전송채널에 대한 연구를 수행하여야 40 Gb/s 백플레인 이더넷 수신 적응 등화기 등의 설계가 가능할 것이다.

변형된 Hairpin-Type의 $YBa_2$$Cu_3$$O_{7-$\delta$}$ 대역통과 필터 (Y$Ba_2$$Cu_3$$O_{7-$\delta$}$ Modified Hairpin-Type Bandpass Filter)

  • 정구락;박상진;석중현;이은홍;강준희
    • Progress in Superconductivity
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    • 제2권2호
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    • pp.92-96
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    • 2001
  • We have fabricated a modified hairpin-type YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) 2-pole microstrip bandpass filter with the center frequency of 5.8 GHz. We designed a hairpin-type filter with interdigital-coupled inner poles to improve the filter performance. Compared to a typical hairpin-type filter of the same size, the center frequency, the bandwidth and the insertion loss appeared smaller by 14.5% ,29.6%, and 0.55 dB, respectively. The dimensions of the filter were 13.7mm ${\times}$3.3 mm. YBCO films deposited on r-cut sapphire buffered with a CeO$_2$thin layer were used fur making the filter.

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Single Crystalline ${\beta}$-Na0.33V2O5 Nanowires Based Supercapacitor

  • Trang, Nguyen Thi Hong;Shakir, Imran;Kang, Dae-Joon
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.587-587
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    • 2012
  • Supercapacitors, which can deliver significant energy with high power density, have attracted a lot of attention due to their potential application in energy storage. Among various oxide materials, sodium vanadate has been recognized as one of the most promising electrode materials because of high electrical conductivity. In addition, larger layer spacing of ${\beta}$-Na0.33V2O5 compared to V2O5 makes easier Li+ insertion. Moreover, ${\beta}$-Na0.33V2O5 has a tunnel like structure along b axis with 3 kinds of V site allowing it to enhance the ion intercalation by introducing three different intercalation sites along the tunnel. The tunnel can act as a fast diffusion path for ion diffusion, which can improve the overall charge storage kinetics. In this study, high quality single crystalline sodium vanadate (${\beta}$-Na0.33V2O5) nanowires were grown directly on Pt coated $SiO_2$ substrate by a facile chemical solution deposition method without employing catalyst, surfactant or carrier gas. The results show that great enhancement in capacitance was observed compared with previous reports.

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Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors by AZO/Ag/AZO Multilayer Electrode

  • No, Young-Soo;Yang, Jeong-Do;Park, Dong-Hee;Kim, Tae-Whan;Choi, Ji-Won;Choi, Won-Kook
    • 센서학회지
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    • 제22권2호
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    • pp.105-110
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    • 2013
  • We fabricated an a-IGZO thin film transistor (TFT) with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = 400/50 ${\mu}m$) showed a subs-threshold swing of 3.78 V/dec, a minimum off-current of $10^{-12}$ A, a threshold voltage of 0.41 V, a field effect mobility of $10.86cm^2/Vs$, and an on/off ratio of $9{\times}10^9$. From the ultraviolet photoemission spectroscopy, it was revealed that the enhanced electrical performance resulted from the lowering of the Schottky barrier between a-IGZO and Ag due to the insertion of an AZO layer and thus the AZO/Ag/AZO multilayer would be very appropriate for a promising S/D contact material for the fabrication of high performance TFTs.

PZT/$BaTiO_3$/PZT 다층 후막의 유전특성 (Electrical Properties of PZT/$BaTiO_3$/PZT Multilayer Thick Films)

  • 남성필;이성갑;배선기;이영희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.123-124
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    • 2006
  • The sandwiched PZT/$BaTiO_3$/PZT thick films were fabricated by two different methods thick films of the PZT by screen printing method on alumina substrateselectrodes with Pt, thin films of $BaTiO_3$ by the spin-coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $BaTiO_3$ coating solution at interface of the PZT thick films, The insertion of BaTi03 interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $BaTiO_3$ layers. The leakage current density of the $PZT/BaTiO_3-1$ film is less that $4.41{\times}10^{-9}A/cm^2$ at 5 V.

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