• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.63-63
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• 2009

Many researchers have been studied as active and transparent electrode using ZnO (Zinc oxide) inorganic semiconductor material due to their good properties such as wide band-gap and high electrical properties compared with amorphous-Si. In this study, we fabricated ZnO films by the RF magnetron sputtering method at a low temperature for a channel layer in thin-film transistor (TFT) and investigated the characteristics of sputtered ZnO films. Also, the electrical properties of TFT using ZnO channel layer such as field effect mobility(${\mu}$), threshold voltage ($V_{th}$), and $I_{on/off}$ ratio are investigated for the application of the display and electronic devices.

• The Korean Journal of Ceramics
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• 제7권1호
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• pp.26-29
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• 2001

Indium tin oxide (ITO) films were deposited on glass substrates at $300^{\circ}C$ in oxygen/argon mixtures by RF-enhanced DC-magnetron sputtering and were compared to those by conventional DC magnetron sputtering. The RF enhancement was performed using a coil above an ITO target. X-ray diffraction measurements revealed that RF-enhanced plasma affected the preferred orientation and the crystallinity of the films. The resistivity of the films prepared by RF-enhanced DC-magnetron sputtering was almost constant at oxygen content lower than 0.3% and then increased sharply with increasing oxygen content. However the resistivity of the films by conventional sputtering has little dependence on the oxygen content. Those results can be explained on the basis of the incorporation of oxygen into the ITO films due to the RF enhancement.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 추계학술대회 논문집 전기물성,응용부문
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• pp.92-94
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• 2003

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials, the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultra small size. In this paper, detected displacement current using PBLG and PBDG, deposition and observed the electrical characteristics to each 1, 3, 5, 7, 9 layers by LB method. Maximum value of change ratio of displacement current by the detected speed and temperature appeared almost lineally, could confirm that it are in comparison relation each other speed-temperature and displacement current. The structure of manufactured device is MIM. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

• Macromolecular Research
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• 제10권2호
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• pp.75-79
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• 2002

Organic materials have considerable attention as active semiconductors for device applications such as thin-film transistors (TFTs) and diodes. Pentacene is a p-type organic semiconducting material investigated for TFTs. In this paper, we reported the morphological and electrical characteristics of pentacene TFT films. The pentacene transistors showed the mobility of 0.8 $\textrm{cm}^2$/Vs and the grains larger than 1 ${\mu}{\textrm}{m}$. Deep-level transient spectroscopy (DLTS) measurements were carried out on metal/insulator/organic semiconductor structure devices that had a depletion region at the insulator/organic-semiconductor interface. The duration of the capacitance transient in DLTS signals was several ten of seconds in the pentacene, which was longer than that of inorganic semiconductors such as Si. Based on the DLTS characteristics, the energy levels of hole and electron traps for the pentacene films were approximately 0.24, 1.08, and 0.31 eV above Ev, and 0.69 eV below Ec.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.294-294
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• 2010

Over the last decade, dye-sensitized solar cell (DSSC) has attracted much attention due to the high solar-to-electricity conversion efficiency up to 10% as well as low cost compared with p-n junction photovoltaic devices. DSSC is composed of mesoporous TiO2 nanoparticle electrodes coated with photo-sensitized dye, the redox electrolyte and the metal counter electrode. The performances of DSSC are dependent on constituent materials and interface as well as device structure. Replacing the heavy glass substrate with plastic materials is crucial to enlarge DSSC applications for the competition with inorganic based thin film photovoltaic devices. One of the biggest problems with plastic substrates is their low-temperature tolerance, which makes sintering of the photoelectrode films impossible. Therefore, the most important step toward the low-temperature DSSC fabrication is how to enhance interparticle connection at the temperature lower than $150^{\circ}C$. In this talk, the key issues for high efficiency plastic solar cells will be discussed, and several strategies for the improvement of interconnection of nanoparticles and bendability will also be proposed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.616-619
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• 2005

OLED display are extremely sensitive to water and oxygen. Developing a thin film encapsulation for this technology has for a long time been elusive. Vitex has developed a multilayer barrier consisting of alternating inorganic and organic layers which can meet the requirements for a successful protection for such displays. In this paper we will discuss the basic process, the model, the results on top and bottom emission OLED displays as well as the application of Barix layers on plastic to create flexible OLED displays. We will show that for displays all the requirement for the telecommunication industry can be met and that the we can scale up to a mass manufacturing process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.428-431
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• 2002

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/ PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.717-720
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• 2007

We fabricated the 3.5 inch QCIF AMOLED panel with ultra low temperature polycrystalline silicon TFT on the plastic substrate. To reduce the leakage current, we used the triple layered gate metal structure. To reduce the stress from inorganic dielectric layer, we applied the organic interlayer dielectric and the photoactive insulating layer. By using the interlayer dielectric as a capacitor, the mask steps are reduced up to five.

• 한국재료학회지
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• 제6권6호
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• pp.610-617
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• 1996

강유전체 재료의 하부전극으로 사용되고 있는 Pt/Ti 박막의 접착력에 대한 열처리 분위기의 영향을 연구하였다. 시편의 접착력은 90$^{\circ}$ 필 테스트 방법을 사용하여 정량적으로 측정하였다. 열처리 후 사용된 분이기에 관계없이 모두 접착력이 감소하였는데 특히 산소분위기에서 열처리 한 시편의 접착력이 매우 크게 감소하였다. AES depth profile과 단면 TEM을 이용하여 계면반응을 관찰한 결과 산소열처리시에는 Ti가 외부에서 확산해 온 산소와 반응하여 rutile TiO2상이 형성됨을 알 수 있었다. 그러므로 산소열처리 후에 일어나는 접착력의 급격한 감소 원인은 열처리시 취약한 TiO2상이 형성되며 이로 인해 Ti 접착층이 고갈되기 때문임을 알 수 있었다.

• 한국재료학회지
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• 제7권5호
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• pp.423-430
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• 1997

졸-겔 dip coating법에 의해 제조한 바륨페라이트 박막의 미세구조와 결정학적인 구조 특성에 관해 조사하였다. 기판에 형성된 바륨페라이트 입자는 침상 형태의 입자들로 구성되어 있었으며, C축은 장축 방향이었고, 막 두께가 증가함에 따라 침상형 입자들은 기판에 평행하게 배향하는 경향을 나타내었다. 박막은 바륨페라이트층, Ba, Fe, SiO$_{2}$로 구성되어 있는 중간층, 그리고 기판층인 SiO$_{2}$층으로 구성되어 있었으며, 중간층과 SiO$_{2}$층간의 계면은 Ba 와 SiO$_{2}$간의 화합물로 구성되어 있었다. 침상 형태의 입자는 95$0^{\circ}C$에서 3시간 열처리하므로써 완전히 소실하였고, 130$0^{\circ}C$에서 3시간 열처리하므로써 c면이 기판에 평행하게 위치하는 완전한 육각판상 형태의 입자로 변화되었다.