• Macromolecular Research
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• v.10 no.2
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• pp.75-79
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• 2002

Organic materials have considerable attention as active semiconductors for device applications such as thin-film transistors (TFTs) and diodes. Pentacene is a p-type organic semiconducting material investigated for TFTs. In this paper, we reported the morphological and electrical characteristics of pentacene TFT films. The pentacene transistors showed the mobility of 0.8 $\textrm{cm}^2$/Vs and the grains larger than 1 ${\mu}{\textrm}{m}$. Deep-level transient spectroscopy (DLTS) measurements were carried out on metal/insulator/organic semiconductor structure devices that had a depletion region at the insulator/organic-semiconductor interface. The duration of the capacitance transient in DLTS signals was several ten of seconds in the pentacene, which was longer than that of inorganic semiconductors such as Si. Based on the DLTS characteristics, the energy levels of hole and electron traps for the pentacene films were approximately 0.24, 1.08, and 0.31 eV above Ev, and 0.69 eV below Ec.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.543-544
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• 2006

Pentacene thin film transistors fabricated without photolithographic patterning were fabricated on the plastic substrates. Both the organic/inorganic thin films and metallic electrode were patterned by shifting the position of the shadow mask which accompanies the substrate throughout the deposition process. By using an optically transparent zirconium oxide ($ZrO_2$) as a gate insulator and octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayer (SAM) to increase the adhesion between the plastic substrate and gate insulator and the mobility with surface treatment, high-performance transistor with field effect mobility $.66\;cm^2$/V s and $I_{on}/I_{off}$>$10^5$ was formed on the plastic substrate. This technique will be applicable to all structure deposited at low temperature and suitable for an easy process for flexible display.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2016.10a
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• pp.119-120
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• 2016

This study is about development of inorganic insulation material using by-product materials. The organic material is due to toxic gas emission, when a fire occurs. And it has lower water resistance. The inorganic material is heavy and worse thermal performance than organic materials. In this study, installed light weight ceramic insulation by concrete structure to evaluation fire resistance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.392-393
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• 2007

In this paper, we report the characteristics inorganic EL device with high dielectric constant materials of PMN, PZT. Fabricated EL device shows stable light emission even at 20kHz -400Volt without any break down failure. Brightness voltage curve of EL device is same with typical EL. As increasing applied voltage, the brightness increased linearly. From the results of Frequency and duty ratio variation, over 50% of brightness increment was seen. Luminous efficiency was increased upto 200V range and saturated over 200V by slow increasement of light emission. We got e bright stable emission of 1733 cd/m2 at the condition of Frequency 35 KHz, Duty 10%, 400V.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.158-158
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• 2012

A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane (PSS), was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings are responsible for electron trapping owing to their low-lying LUMO, while the Si-O-Si inorganic linkages of high HOMO-LUMO gap provide the intrachain energy barrier for controlling electron transport. Such an alternation of the organic and inorganic moieties in a polymer may give an interesting quantum well electronic structure in a molecule. The PSS thin film was fabricated by spin-coating of the PSS solution in THF organic solvent onto Si-wafer substrates and curing. The electron trapping of the PSS thin films was confirmed by the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure. And the quantum well electronic structure of the PSS thin film, which was thought to be the origin of the electron trapping, was investigated by a combination of theoretical and experimental methods: density functional theory (DFT) calculations in Gaussian03 package and spectroscopic techniques such as near edge X-ray absorption fine structure spectroscopy (NEXAFS) and photoemission spectroscopy (PES). The electron trapping properties of the PSS thin film of quantum well structure are closely related to intra- and inter-polymer chain electron transports. Among them, the intra-chain electron transport was theoretically studied using the Atomistix Toolkit (ATK) software based on the non-equilibrium Green's function (NEGF) method in conjunction with the DFT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.29-29
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• 2010

Engineering plastics have excellent electrical properties, mechanical strength and various characteristic which include chemical resistance, environmental resistance, weatherability at a wide temperature range. It has good characteristic(light weight, good productivity) as compare with epoxy or porcelain insulators. However, engineering plastics not suited to outdoor insulator because it isn't hydrophobic. Therefore, to over come these critical problems, we improve the surface insulation characteristics of engineering plastic by coating micro-, nano- size inorganic fillers added to RTV-SIR(Room temperature vulcanized-silicone rubber) at this plastic surface. The effect is analyzed through salt-fog test, tracking test. In conclusion, the engineering plastic coated RTV with micro-$Al_2O_3$20[phr], nano-Al(OH)3 1 ~ 3[phr] improved much better than the others.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.429-432
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• 2004

The demand for electric power keeps growing, and tends to be more effective. Polymer insulators have been manufactured for almost twenty years and the excellent insulation performance of polymer insulators is attractive. Polymeric materials are now widely used as a replacement for inorganic materials such as porcelain or glass for the outdoor insulation of high voltage insulation. GFRP has been used widely as a core materials for polymer insulators. This paper reports the mechanical properties of GFRP for insulators. The bending strength was simulated and evaluated according to the winding angle. The fiber orientation in GFRP has a great effect on the strength of GFRP because the strength of GFRP mainly depends on the strength of fiber. Results of simulated and evaluated strength of GFRP were compared each other. The simulated strength of GFRP rod was different from the evaluated strength. It was caused that the shear stress had a great effect on the strength of GFRP although the stress of parallel direction of GFRP was much higher.

• Proceedings of the SAREK Conference
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• 2008.11a
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• pp.369-374
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• 2008

This study is an inorganic foaming ceramic by sol-gel reaction in order to overcome weak point of insulator using in construction equipment. We shall be able to confirm as the existing product substitute is possible result of this study. The solution where the silicate, the ceramic powder and the additive are included which makes foaming ceramic slurry, then the insulator made by used $CO_2$ Sol-Gel reaction. There being will be able to manufacture the insulator where the economical efficiency is excellent confirmed at the start product which is completed. The recording gel time decreases when the silicate will increase. Uses the hydrogen peroxide and fe make foam, when additionally surface preparation the fluorine resin, the water tolerance increases and will be able to complement the weak point of the silicate which omits in the water. The case which will use the loess powder with the research method which sees specially was environment-friendly product and according to appearing, the physical properties of nonflammability.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.2 s.344
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• pp.13-17
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• 2006

Pentacene channel for organic thin film transistor was deposited on the SiOC film by thermal evaporation. The growth of pentacene is related with the Diels-Alder reaction and the nucleophilic reaction by the thermal induction. The surface is an important factor to control the recursive Diels-Alder reaction for growing of pentacene on SiOC far The terminal C=C double bond of pentacene molecule was broken easily as a result of attack of the nucleophilic reagents on the surface of SiOC film. The nucleophilic reaction can be accelerated by increasing temperature on surface, and it maks pentacene to grow hardly on the SiOC film with a flow rate ratio of $O_2/(BTMSM+O_2)=0.5$ due to its inorganic property. The nucleophlic reaction mechanism is $SN_2(bimolecular nucleophilic substitution)$ type.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1009-1013
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• 2009

In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.