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Chemical Reaction of Pentacene Growth on Hybrid Type Insulator by Annealing Temperature  

Oh Teresa (School of Electronic and Information Engineering, Chongju University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.43, no.2, 2006 , pp. 13-17 More about this Journal
Abstract
Pentacene channel for organic thin film transistor was deposited on the SiOC film by thermal evaporation. The growth of pentacene is related with the Diels-Alder reaction and the nucleophilic reaction by the thermal induction. The surface is an important factor to control the recursive Diels-Alder reaction for growing of pentacene on SiOC far The terminal C=C double bond of pentacene molecule was broken easily as a result of attack of the nucleophilic reagents on the surface of SiOC film. The nucleophilic reaction can be accelerated by increasing temperature on surface, and it maks pentacene to grow hardly on the SiOC film with a flow rate ratio of $O_2/(BTMSM+O_2)=0.5$ due to its inorganic property. The nucleophlic reaction mechanism is $SN_2(bimolecular nucleophilic substitution)$ type.
Keywords
펜타센;SiOC 절연막;C=C 이중결합;화학적 이동;유기전계효과트랜지스터;
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