• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.135-136
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• 2008

• Proceedings of the Optical Society of Korea Conference
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• 2007.02a
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• pp.9-10
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• 2007

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.26-27
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• 2005

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.295-296
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• 2008

• Journal of Electrical Engineering and Technology
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• v.7 no.3
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• pp.358-365
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• 2012

A new third harmonic injection circuit for light-emitting diode (LED) drivers is proposed to eliminate electrolytic capacitors and thereby extend the lifetime of LED drivers. When a third harmonic current is injected to the input current of the LED driver, the required capacitance of the driver can be reduced. The proposed circuit can control an injection ratio and has simple circuitry. The synchronous third harmonic is generated by a phase locked loop (PLL), a 1/3 counter, and op-amps and applied to a power factor correction circuit. Thus, the storage capacitor can install film capacitors instead of the electrolytic capacitor. The value of storage capacitance can be reduced to 78% compared to an input power factor of 100%. The proposed circuit is applied to the 80W prototype LED driver to experimentally verify the performances.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.3
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• pp.478-485
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• 2021

An injection locking technology of a semiconductor laser is a promising technology to generate optical complex signals by adjusting optical injection parameters. The extraction of the precise injection parameters plays a key role in the generation of the optical complex signal. Rate equations of semiconductor lasers under optical injection are commonly used to map the injection parameters and the corresponding optical complex signal. The accuracy of the generated optical complex signal on the injection parameters is limited since the rate equations require a locking map-based interpolation method. We propose a novel analytic method, namely rate equation-based direct extraction method, to directly calculate the injection parameters without relying on the locking map-based interpolation method. We achieved 103-times improvement of the signal accuracy by using the proposed method compared to locking-map based interpolation method.

• Korean Journal of Optics and Photonics
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• v.23 no.1
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• pp.42-51
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• 2012

In this paper, injection-locking characteristics versus active layer structures in Fabry-Perot laser diodes (FP-LD) are compared. TE and TM gain spectra and peak gains versus carrier density in polarized and unpolarized multiple quantum well structures and in an unpolarized bulk structure are calculated. The calculated gain parameters are applied to a time-domain large-signal model to simulate the injection-locking characteristics. The results show that RIN in unpolarized FD-LDs is about 3 dB lower than that in a polarized FP-LD and that the eye characteristics of the unpolarized FP-LD are much better than those of the polarized FP-LD.

• 한국ITS학회:학술대회논문집
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• 2010.05a
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• pp.92-95
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• 2010

• Journal of information and communication convergence engineering
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• v.5 no.3
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• pp.281-284
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• 2007

We have analyzed the short pulse generation using heterodyne techniques. The numerical model for semiconductor lasers under the heterodyne technique is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. The unselected sidebands will affect the optical and RF-spectral characteristics even when the semiconductor laser is locked to the target sidebands.

• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.101-104
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• 2006

We have investigated the spectral characteristics of the semiconductor lasers locked to the sidebands of the master laser in this paper, which were expressed by a series of the Bessel function. The numerical model for the semiconductor lasers based on the typical Lang's equation has been extended in order to take into account the simultaneous injection of the multiple sidebands of the directly modulated ML. We analyses characteristics of direct intensity modulation.