• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.161-165
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• 2003

Optical 60 ㎓ millimeter-wave (MMW) signal generation is demonstrated using the sideband injection-locking method in the master/slave configuration, where two slave lasers are locked to two among several side-bands produced by the direct rf-modulation of a master laser. These two locked slave laser outputs beat against each other in the photo-detector and produce stable and very pure 60 ㎓ signals.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.4
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• pp.492-498
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• 2017

In this paper, we integrate a divide-by-3 injection-locked frequency divider (ILFD) in CMOS technology with a $0.18-{\mu}m$ BiCMOS process. We propose a self-injection technique that utilizes harmonic conversion to improve the locking range, phase-noise, and input sensitivity simultaneously. The proposed self-injection technique consists of an odd-to-even harmonic converter and a feedback amplifier. This technique offers the advantage of increasing the injection efficiency at even harmonics and thus realizes the low-power implementation of an odd-order division ILFD. The measurement results using the proposed self-injection technique show that the locking range is increased by 47.8% and the phase noise is reduced by 14.7 dBc/Hz at 1-MHz offset frequency with the injection power of -12 dBm. The designed divide-by-3 ILFD occupies $0.048mm^2$ with a power consumption of 18.2-mW from a 1.8-V power supply.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.359-360
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• 2009

This paper reports experimental results on temporal characteristics of injection-locked polarization switching of a conventional type 1.55-${\mu}m$ wavelength single-mode vertical-cavity surface-emitting laser (VCSEL). The polarization of external injection beam was kept orthogonal to main mode of VCSEL. The relation for variation of intensity of two polarization modes of VCSEL with wavelength detuning for various repetition rates of injection pulse is reported.

• Korean Journal of Optics and Photonics
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• v.1 no.2
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• pp.191-197
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• 1990

An experiment on the phase stability of injection-locked beam is done by using AlGaAs semiconductor lasers. The coherence of two beams from the master and slave lasers is measured by interference between the beams in the Twymann-Green interferometer. The phase change of the output beam of the slave laser as a function of the driving current is measured in the Mach-Zehnder interferometer consisted of the master and slave lasers and a value of 2.5radlmA is obtainccl.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.5
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• pp.453-458
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• 2010

In this work, a 18 GHz divide-by-4 injection-locked frequency divider(ILFD) based on ring oscillator has been developed in $0.13-{\mu}m$ Si RFCMOS technology. The free-running oscillation frequency is from 4.98 to 5.22 GHz and output power is about －30 dBm, consuming 33.4 mW with a 1.5 V supply voltage. At 0 dBm input power, the locking range is 3.5 GHz(17.75~21.25 GHz) and with varactor tuning, the operating range is increased up to 5.25 GHz(16.0~21.25 GHz). The fabricated chip size is $0.76\;mm{\times}0.57\;mm$ including DC and RF pad.

• Current Optics and Photonics
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• v.2 no.6
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• pp.563-567
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• 2018

We propose and experimentally demonstrate a simple tunable photonic microwave band-pass filter with high resolution using a reflective semiconductor optical amplifier (RSOA) and an optical time-delay line. The RSOA is used as a gain medium for generating cross-gain modulation (XGM) effect as well as an optical source. The optical source provides narrow spectral width by self-injection locking the RSOA in conjunction with a partial reflection filter with specific center wavelength. Then, when the RSOA is operated in the saturation region and the modulated recursive signal is injected into the RSOA, the recursive signal is inversely copied to the injection locked optical source due to the XGM effect. Also, the tunability of the passband of the proposed microwave filter is shown by controlling an optical time-delay line in a recursive loop.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.8
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• pp.717-724
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• 2016

This paper presents design of a 40 GHz CMOS PLL frequency synthesizer for a 60 GHz sliding-IF RF transceiver. For stable locking over a wide bandwith for a injection-locked frequency divider, an inductive-peaking technique is employed so that it ensures the PLL can safely lock across the very wide tuning range of the VCO. Also, Injection-locked type LC-buffer with low-phase noise and low-power consumption is added in between the VCO and ILFD so that it can block any undesirable interaction and performance degradation between VCO and ILFD. The PLL is designed in 65 nm CMOS precess. It covers from 37.9 to 45.3 GHz of the output frequency. and its power consumption is 74 mA from 1.2 V power supply.

• Journal of information and communication convergence engineering
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• v.8 no.4
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• pp.457-460
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• 2010

we have analyzed tens of Giga pulse signal generation using sideband injection locking scheme. The numerical model for semiconductor lasers under the strong optical injection is based on the Lang's equation and has been extended in order to take into account the simultaneous injection of the multiple sidebands of the current-modulated laser. The numerical simulation results show that the unselected sidebands will affect the optical and RF-spectral characteristics even though the semiconductor laser is locked to the target sidebands.

• Journal of the Institute of Convergence Signal Processing
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• v.21 no.4
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• pp.162-169
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• 2020

In this paper, we attempted a qualitative understanding of mutual injection locking without rigorous mathematics, and analyzed the proposed mutual injection locked light source. Also, a low-cost WDM-PON light source based on mutual injection locking using two unpolarized Fabry-Perot Laser Diodes (F-P LDs), was implemented. The RIN (Relative Intensity Noise) characteristic for the wavelength change of the F-P LD was measured, and when the variable wavelength range was 2.07 nm, it showed a RIN of at least -110 dB/Hz.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1995.10a
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• pp.839-844
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• 1995