• 대한치과의사협회지
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• 제53권11호
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• pp.804-816
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• 2015

PURPOSE: The aim of this study was to evaluate the influence of the oxide layer removal process in the Co-Cr-Mo (CCM) abutment after casting procedure on the prosthesis settlement and screw stability. MATERIALS AND METHODS: CCM abutments of four different interface conditions (CCM-M; machined, CCM-O; oxide layer formed, CCM-B; blasted, CCM-P; polished after blasted) and gold abutment (Gold-C; Cast with type III Gold alloy) were used. The initial settling values of abutments were evaluated according to the difference of implant-abutment length when the tightening torques were applied at 5 Ncm and 30 Ncm, and the settling values of abutments caused by loading were evaluated according to the difference of implant-abutment length before and after loading with 250 N, 100000 cycle. The loss ratios of removal torque for abutment screws were evaluated according to the difference in value of removal torques under 30 Ncm tightening torque applied before and after cyclic loading. RESULTS: The CCM-P and CCM-B group showed a higher initial settling value compared with the Gold-C group (P<.05), while the Gold-C group showed the highest settling values caused by loading (P<.05) and no significant differences were observed for between CCM groups (P>.05). The loss ratio of removal torque values for the CCM-B, CCM-P groups did not differ significantly from that of the Gold-C group (P>.05). CONCLUSION: Even though the oxide layer was removed by different methods, CCM abutment with internal conical connection structure showed lower abutment settling and similar screw loosening after cyclic loading compared with gold abutment.

• 한국자기학회지
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• 제20권5호
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• pp.191-195
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• 2010

두 차례에 걸친 양극 산화 과정 중 1차 양극 산화 시 성장한 초기 산화 피막의 제거와 2차 양극 산화 시간에 따른 다공성 알루미나 막의 성장에 대해 살펴보았다. 다공성 알루미나 막의 제작은 인산을 전해 용액으로 사용하여 두 차례의 양극산화 과정을 통해 이루어졌으며 초기 산화 피막의 제거가 2차 양극 산화 후 나타나는 알루미나 막 표면상의 기공구조형성에 미치는 영향과 함께 2차 양극 산화 시간에 따라 성장하는 알루미나 막의 두께 변화를 관찰하였다. 그 결과 1차 양극 산화 후 인산과 크롬산을 이용한 식각 과정에서 이루어진 산화 피막의 제거 정도에 따라 형성되는 다공 구조의 균일도가 향상됨을 관찰 할 수 있었다. 또한 2차 양극 산화 시간에 따라 산화 막의 두께가 선형적으로 증가함을 알 수 있었다. 본 연구를 통해 인산용액을 전해액으로 사용하였을 경우 150 V의 양극 산화 전압 하에서 다공성 알루미나 막의 성장률은 22.5 nm/min임을 확인 할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.6-11
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• 2000

The hydrogen plasma treatment of silicon wafers in the reactive ion-etching mode was studied for the application to silicon-on-insulator wafers which were prepared using the wafer bonding technique. The chemical reactions of hydrogen plasma with surface were used for both surface activation and removal of surface contaminants. As a result of exposure of silicon wafers to the plasma, an active oxide layer was found on the surface. This layer was rendered hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposing time and power. In addition, the surface became smoother with the shorter plasma exposing time and power. The value of initial surface energy estimated by the crack propagation method was 506 mJ/㎡, which was up to about three times higher as compared to the case of conventional direct using the wet RCA cleaning method.

• 한국재료학회지
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• 제24권12호
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• pp.682-688
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• 2014

Physical and chemical changes in a polished wafer and in $2.5{\mu}m$ & $4{\mu}m$ epitaxially grown Si layer wafers (Epilayer wafer) after surface treatment were investigated. We characterized the influence of surface treatment on wafer properties such as surface roughness and the chemical composition and bonds. After each surface treatment, the physical change of the wafer surface was evaluated by atomic force microscopy to confirm the surface morphology and roughness. In addition, chemical changes in the wafer surface were studied by X-ray photoemission spectroscopy measurement. Changes in the chemical composition were confirmed before and after the surface treatment. By combined analysis of the physical and chemical changes, we found that diluted hydrofluoric acid treatment is more effective than buffered oxide etching for $SiO_2$ removal in both polished and Epi-Layer wafers; however, the etch rate and the surface roughness in the given treatment are different among the polished $2.5{\mu}m$ and $4{\mu}m$ Epi-layer wafers in spite of the identical bulk structural properties of these wafers. This study therefore suggests that independent surface treatment optimization is required for each wafer type, $2.5{\mu}m$ and $4{\mu}m$, due to the meaningful differences in the initial surface chemical and physical properties.

• 한국전기전자재료학회논문지
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• 제33권3호
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• pp.245-248
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• 2020

The wettability of silicon carbide (SiC) crystal, which has 6H-SiC and 4H-SiC regions prepared using the physical vapor transport (PVT) method, is quantitatively analyzed using dispensed deionized (DI) water droplets. Regardless of the polytypes in SiC, the average of five contact angle measurements showed a difference of about 6° between the Si-face and C-face. The contact angle on the Si-face (C-face) is measured after the removal of the native oxide using BOE (6:1), and revealed a significant decrease of the contact angle from 74.9° (68.4°) to 47.7° (49.3°) and from 75.8° (70.2°) to 51.6° (49.5°) for the 4H-SiC and 6H-SiC regions, respectively. The contact angle of the Si-face recovered over time during room temperature oxidation in air; in contrast, that of the C-face did not recover to the initial value. This study shows that the contact angle is very sensitive to SiC surface polarity, specific surface conditions, and process time. Contact angle measurements are expected to be a rapid way of determining the surface polarity and wettability of SiC crystals.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권7호
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• pp.424-432
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• 2000

The plasma surface treatment, using hydrogen gas, of the silicon wafer was investigated as a pretreatment for the application to silicon-on-insulator (SOI) wafers using the silicon direct bonding technique. The chemical reactions of hydrogen plasma with surfaces were used for both the surface activation and the removal of surface contaminants. As a result of exposure of silicon wafer to the plasma, an active oxide layer was formed on the surface, which was rendered hydrophilic. The surface roughness and morphology were estimated as functions of plasma exposing time as well as of power. The surface became smoother with decreased incident hydrogen ion flux by reducing plasma exposing time and power. This process was very effective to reduce the carbon contaminants on the silicon surface, which was responsible for a high initial surface energy. The initial surface energy measured by the crack propagation method was 506 mJ/m2, which was up to about three times higher than that of a conventional RCA cleaning method.

• 구강회복응용과학지
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• 제16권3호
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• pp.197-210
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• 2000

Surface roughness is one of implant surface topography and it's found that surface roughness characterizations, such as surface energy, oxide layer thickness and its chemical composition, are closely correlated if the roughness is changed. Several studies showed the importance of analyzing surface structure so the surface structure of thread implant was analyzed to measure the implant quality exactly. In this study, surface roughness of 4 implants - MK $II^{(R)}$(Nobel Biocare), $RBM^{(R)}$(Life-Core, USA), $Osseotite^{(R)}$(3i, USA), $TPS^{(R)}$(Life-Core, USA) - were measured using $Accura^{(R)}$ and 40 implants were installed into 4 sets of ten bovine ribs based on the parameters from the measurements. From this test, the following conclusions for the initial stability were drawn by measuring and comparing RFA, Periotest Value (PTV), Removal Torgue Value (RTV). 1. $R_a$ value in surface roughness measurement was increasing by the order of $MKII^{(R)}$, $Osseotite^{(R)}$, $RBM^{(R)}$, $TPS^{(R)}$ and $R_q$ value was the same order. 2. $R_q$ value in each section was observed to increase by the order of $MKII^{(R)}$, $Osseotite^{(R)}$, $RBM^{(R)}$, $TPS^{(R)}$ in top and $MKII^{(R)}$, $RBM^{(R)}$, $Osseotite^{(R)}$, $TPS^{(R)}$ in mid-section but the value of $MKII^{(R)}$ bottom was the lowest, followed by $Osseotite^{(R)}$, $RBM^{(R)}$ and $TPS^{(R)}$. 3. RFA increased by the order of $RBM^{(R)}$(7042Hz), $MKII^{(R)}$(7047Hz), $Osseotite^{(R)}$(7076Hz), $TPS^{(R)}$(7168Hz) and there was no significance between each group. 4. PTV was increasing by the order of $MKII^{(R)}$(-1.62), $TPS^{(R)}$(-1.92), $Osseotite^{(R)}$ & $RBM^{(R)}$(-2.08) and there was no significance, either. 5. Removal torque in RTV measurement showed the increasing order of $MKII^{(R)}(5.31kgf{\cdot}cm)$, $Oeeotite^{(R)}(5.71kgf{\cdot}cm)$, $TPS^{(R)}(5.92kgf{\cdot}cm)$ and $RBM^{(R)}(7.24kgf{\cdot}cm)$ and there was no significance among groups. Above observations explains that surface roughness does not make any impact on the initial stability of implants installation.