• The Korean Journal of Applied Statistics
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• v.34 no.1
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• pp.99-114
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• 2021

With the Fourth Industrial Revolution based on new technology, the semiconductor manufacturing industry researches various analysis methods such as detecting process abnormalities and predicting yield based on equipment sensor data generated in the manufacturing process. The semiconductor manufacturing process consists of hundreds of processes and thousands of measurement processes associated with them, each of which has properties that cannot be defined by chemical or physical equations. In the individual measurement process, the actual measurement ratio does not exceed 0.1% to 5% of the target product, and it cannot be kept constant for each measurement point. For this reason, efforts are being made to determine whether to manage by using equipment sensor data that can indirectly determine the normal state of each step of the process. In this study, the Functional Data Analysis (FDA) was proposed to define a process abnormality detection process based on equipment sensor data and compensate for the disadvantages of the currently applied statistics-based diagnosis method. Anomaly detection accuracy was compared using machine learning on actual field case data, and its effectiveness was verified.

• Resources Recycling
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• v.30 no.4
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• pp.20-26
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• 2021

Solar grade silicon (SoG-Si) has been commercially supplied mainly from off-grade high-purity silicon manufactured for electronic-grade Si (EG-Si). Therefore, for wider application of solar cells, the development of a refining process at a considerably lower cost is required. The most cost-effective and direct approach for producing SoG-Si is to purify and upgrade metallurgical-grade Si (MG-Si). In this study, directional solidification of molten MG-Si was conducted in a high-frequency induction furnace to remove iron from molten Si. The experimental conditions and results were also discussed with respect to the effective segregation coefficient, Scheil equation, and Peclet number. The study showed that when the descent velocity of the specimen decreased, the macro segregations of impurities and ingot purities increased. These results were derived from the decrease in the effective segregation coefficient with the decrease in the rate of descent of the specimen.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.5
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• pp.169-174
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• 2022

This study is to verify the feasibility of SiC single crystal growth using recycled SiC powder. The fundamental physical properties such as particle size, shape, composition and impurities of the recycled powder were analyzed, and the sublimation behavior occurring inside the reactor were predicted using the basic data. As a result of comprehensive judgment, the physical properties of the recycled powder were suitable for single crystal growth, and single crystal growth experiments were conducted using this. 100 mm 4H-SiC single crystal ingot with a height of 25 mm was grown without polytype inclusion. In the case of micro-pipe density was 0.02 ea/cm² and resistivity characteristics was 0.015~0.020 ohm·cm², commercial level quality was obtained, but additional analysis related to dislocation density and stacking faults is required for device application.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.3
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• pp.91-96
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• 2023

To verify the quality of bubbles during the use of quartz glass crucibles (QC), an appropriate accelerated testing method was proposed. The bubble state of discarded waste crucibles obtained from actual Czochralski (Cz) processes was analyzed, and optimal heat treatment conditions were suggested by varying temperature, pressure, and time using the QC test piece. By subjecting the samples to heat treatment at 1450℃, 0.4 Torr, and 40 hours, it was possible to control the bubble size and density to a similar level as those generated in the actual Cz process. In particular, by selecting a relatively lower pressure of 0.4 Torr compared to the typical range of 10~20 Torr applied in the Cz process, the time required for accelerated bubble formation testing could be reduced. However, it was determined that increasing the heat treatment temperature to 1550℃ led to the phenomenon of Ostwald ripening, resulting in larger bubbles and a rapid decrease in density. Therefore, it was concluded that it was not a suitable condition for the desired b ake test.

• Korean Journal of Materials Research
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• v.4 no.8
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• pp.906-914
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• 1994

Plastic behavior of two-phase intermetallic compounds based on $LI_{2}$-type $(Al, Cr)_3$ Ti was investigated using compression test at R.T. and 77K. $LI_{2}$ single phase alloys and two-phase alloys consisting of mainly $LI_{2}$ phase and a few or 20% second phases were selected from AI-Ti-Cr phase diagram. In general, compared with Llz single phase, two-phase alloys consisting of 20% second phase showed relatively high yield strength and poor ductility. Among the alloys, however, AI-21Ti-23Cr alloy consisting of 20% $Cr_{2}Al$ phase showed available ductility as well as high yield strength. Plastic behavior of $LI_{2}$ single phase alloys and two-phase alloys consisting of a few% $Cr_{2}Al$ was also investigated. Homogenization of arc melted ingots substantially reduced the amount of second phases but introduced extensive pore. When Cr content increased in $Ll_{2}$ single phase alloys after the homogenization, the volume fraction of pore in the alloys decreased, and no residual pore was observed in two-phase alloys consisting of a few% $Cr_{2}Al$ phase. Environmental effect on the ductility of the alloys was investigated using compression test at different strain rates($1.2 \times 10^{-4}/s$ and $1.2 \times 10^{-2}/s$). Environmental embrittlement was least significant in A1-25Ti-10Cr alloy consisting of LIZ single phase among the alloys tested in this study. However, based on the combined estimation of the pore formation, environmental embrittlement and ingot cast structure, AI-21Ti-23Cr alloy consisting of 20% $Cr_{2}Al$ as the second phase is expected to show the best tensile elongation behavior.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.4 no.1
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• pp.33-40
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• 2006

The characteristics of the aluminum waste melting and the distribution of the radioactive nuclides have been investigated for the estimation on the volume reduction and the decontamination of the aluminum wastes from the decommissioning of the TRIGA MARK it and III research reactors at the Korea Atomic Energy Research Institute(KAERI). The aluminum wastes were melted with the use of the fluxes such as flux $A:NaCl-KCl-Na_3AlF_6$, flux B:NaCl-NaF-KF, flux $C:CaF_2$, and flux $D:LiF-KCl-BaCl_2$ in the DC graphite arc furnace. For the assessment of the distribution of the radioactive nuclides during the melting of the aluminum, the aluminum materials were contaminated by the surrogate nuclides such as cobalt(Co), cesium(Cs) and strontium(Sr). The fluidity of aluminum melt was increased with the addition of the fluxes, which has slight difference according to the type of fluxes. The formation of the slag during the aluminum melting added the flux type C and D was larger than that with the flux A and B. The rate of the slag formation linearly increased with increasing the flux concentration. The results of the XRD analysis showed that the surrogate nuclide was transferred to the slag, which can be easily separated from the melt and then they combined with aluminum oxide to form a more stable compound. The distribution ratio of cobalt in ingot to that in slag was more than 40% at all types of fluxes. Since vapor pressures of cesium and strontium were higher than those that of the host metals at the melting temperature, their removal efficiency from the ingot phase to the slag and the dust phase was by up to 98%.

• The Journal of Korean Academy of Prosthodontics
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• v.47 no.2
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• pp.191-198
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• 2009

Statement of problem: Ceramics have been important materials for the restoration of teeth. The demands of patients for tooth-colored restorations and the availability of various dental ceramics has driven the increased use of new types of dental ceramic materials. Improved physical properties of theses materials have expanded its use even in posterior crowns and fixed partial dentures. However, ceramic still has limitation such as low loading capability. This is critical for long-span bridge, because bridge is more subject to tensile force. Purpose: The wire reinforced ceramic was designed to increase the fracture resistance of ceramic restoration. The purpose of this study was to evaluate the fracture resistance of wire reinforced ceramic. Material and methods: Heat pressed ceramic(ingot No.200 : IPS Empress 2, Ivoclar Vivadent, Liechtenstein) and Ni-Cr wire(Alfa Aesar, Johnson Matthey Company, USA) of 0.41 mm diameter were used in this study. Five groups of twelve uniform sized ceramic specimens(width 4 mm, thickness 2 mm, length 15 mm) were fabricated. Each group had different wire arrangement. Wireless ceramic was used as control group. The experimental groups were divided according to wire number and position. One, two and three strands of wires were positioned on the longitudinal axis of specimen. In another experimental group, three strands of wires positioned on the longitudinal axis and five strands of wires positioned on the transverse axis. Three-point bending test was done with universal testing machine(Z020, Zwick, Germany) to compare the flexural modulus, flexural strength, strain at fracture and fracture toughness of each group. Fractured ceramic specimens were cross-sectioned with caborundum disc and grinded with sandpaper to observe interface between ceramic and Ni-Cr wire. The interface between ceramic and Ni-Cr wire was analyzed with scanning electron microscope(JSM-6360, JEOL, Japan) under platinum coating. Results: The results obtained were as follows: 1. The average and standard deviation in flexural modulus, flexural strength and fracture toughness showed no statistical differences between control and experimental groups. However, strain was significantly increased in wire inserted ceramics(P<.001). 2. Control group showed wedge fracture aspects across specimen, while experimental groups showed cracks across specimen. 3. Scanning electron microscopic image of cross-sectioned and longitudinally-sectioned specimens showed no gap at the interface between ceramic and Ni-Cr wire. Conclusion: The results of this study showed that wire inserted ceramics have a high strain characteristic. However, wire inserted ceramics was not enough to use at posterior area of mouth in relation to flexural modulus and flexural strength. Therefore, we need further studies.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.83-91
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• 1994

We have constructed a vertical gradient freeze (VGF) grower for GaAs single crystals 2 inch in diameter and have grown semi-insulating GaAs co-doped with Cr and In. For the co-doped crystal, the segregation coefficients of the dopants remain unchanged when compared to those doped with only Cr or In. The concentration of Cr and in atoms range from about $2{\Times}10_{16} to 3{imes}10^{17} cm^{-3}$ and $2{\Times}10^{19} to 3{\Times}10^{20} cm^{-3}$ at the seed to the tail part of the grown crystal, respectively. The averaged dislocation etch pit density is found to be less than $8000 cm^{-2}$ throughout the ingot. It is also found that there is some evidence of lattice hardening for the crystal in which the dislocation density is decreased to less than $1000 cm^{-2}$ as In concentration increases. The resistivity increases abruptly from $10^{-2}$ up to $10^8$ Ohm-cm, while the carrier concentration decreases from $10^{16}$ to $10^8 cm^{-3}$ along the growth direction of the GaAs crystal. Semi-insulating properties can be obtained above a critical concentration of Cr of about $6{\Times}10{^16} cm^{-3}$ in the crystal. The main deep levels existing in the GaAs: Cr,In sample are two electron traps at $E_C-0.81eV, E_C-0.35eV$, and two hole traps at $E_V+0.89eV, E_V+0.65eV$.

• Journal of Conservation Science
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• v.35 no.6
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• pp.631-640
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• 2019

The purpose of this study was to compare analytical results of sand iron bars reproduced by the traditional iron-making method through a destructive analysis and a non-destructive analysis. For these studies, we produced two types of samples. One was sample(SI-A), a part of the sand iron bar for destructive analysis. The other was SI-B(9 ㎠) for non-destructive analysis. A metallurgical microscope and scanning electron microscope were used for the destructive analysis, and neutron imaging analysis with the Hokkaido University Neutron Source (HUNS) at Hokkaido University, Japan, was used for the non-destructive analysis. The results obtained by destructive analysis showed that there was ferrite and pearlite of fine crystallite size, and some of these showed Widmanstätten ferrite microstructure grown within the pearlite and coarse ferrite at the edge of the specimen. The results from the neutron imaging analysis showed that there was also ferrite and pearlite with 3 ㎛ α-Fe of BCC structure. Based on these results, neutron imaging analysis is capable of identifying material characteristics without destroying the object and obtaining optimal research results when applying it to objects of cultural heritage.