• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.363-363
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• 2008

The development of dry etching process for sapphire wafer with plasma has been key issues for the opto-electric devices. The challenges are increasing control and obtaining low plasma induced-damage because an unwanted scattering of radiation is caused by the spatial disorder of pattern and variation of surface roughness. The plasma-induced damages during plasma etching process can be classified as impurity contamination of residual etch products or bonding disruption in lattice due to charged particle bombardment. Therefor, fine pattern technology with low damaged etching process and high etch rate are urgently needed. Until now, there are a lot of reports on the etching of sapphire wafer with using $Cl_2$/Ar, $BCl_3$/Ar, HBr/Ar and so on [1]. However, the etch behavior of sapphire wafer have investigated with variation of only one parameter while other parameters are fixed. In this study, we investigated the effect of pressure and other parameters on the etch rate and the selectivity. We selected $BCl_3$ as an etch ant because $BCl_3$ plasmas are widely used in etching process of oxide materials. In plasma, the $BCl_3$ molecule can be dissociated into B radical, $B^+$ ion, Cl radical and $Cl^+$ ion. However, the $BCl_3$ molecule can be dissociated into B radical or $B^+$ ion easier than Cl radical or $Cl^+$ ion. First, we evaluated the etch behaviors of sapphire wafer in $BCl_3$/additive gases (Ar, $N_2,Cl_2$) gases. The behavior of etch rate of sapphire substrate was monitored as a function of additive gas ratio to $BCl_3$ based plasma, total flow rate, r.f. power, d.c. bias under different pressures of 5 mTorr, 10 mTorr, 20 mTorr and 30 mTorr. The etch rates of sapphire wafer, $SiO_2$ and PR were measured with using alpha step surface profiler. In order to understand the changes of radicals, volume density of Cl, B radical and BCl molecule were investigated with optical emission spectroscopy (OES). The chemical states of $Al_2O_3$ thin films were studied with energy dispersive X-ray (EDX) and depth profile anlysis of auger electron spectroscopy (AES). The enhancement of sapphire substrate can be explained by the reactive ion etching mechanism with the competition of the formation of volatile $AlCl_3$, $Al_2Cl_6$ or $BOCl_3$ and the sputter effect by energetic ions.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.988-991
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• 2004

In the present investigation, we tried AR coating simulation by using the "Essential Macleod optical coating design and analysis" program. After various run of the program we selected appropriate materials which have specific refractive indices and for that thickness was optimized to get the low reflectance. By comparing the simulated results for the different materials,we found that $SiO_2$ and TiN are the appropriate materials for this Flat panel device (FPD) application. Thin films of these materials were deposited using RF magnetron sputtering and Inductively Coupled Plasma Chemical Vapour Deposition (ICPCVD) methods on Polyethyleneterephthalate (PET) substrates. Spectroscopic ellipsometer (SE MF-1000) and UV-Vis spectrophotometer (SCINCO) were used for the optical characterization. The obtained experimental results are in good agreement with the simulation results.

• 한국자기학회지
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• 제14권5호
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• pp.163-168
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• 2004

나노 두께의 NiFe의 자기적 특성을 살펴보기 위해 Si(100)/ $SiO_2$(200 nm)/Ta(5 nm)/N $i_{80}$F $e_{20}$(1～15 nm)의 구조를 ICP형 헬리콘 스퍼터로 제작하였다. 제작된 시편의 자기적 물성은 SQUID를 이용하여 $\pm$50 Oe에서의 4.2K와 300K에서 각각의 M-H loop를 측정하여 자기탄성에너지 변화와 보자력을 확인하였다. 또한 SQUID로 4.2K-300K에서의 M-T curve를 통해 온도에 따른 포화자화를 두께에 따라 살펴보았다. TEM을 사용하여 제작된 시편의 각 계면간의 미세구조를 살펴보았다 나노두께의 NiFe는 3 nm 이하에서는 $B_{bulk}$=0, $B_{surf}$=-3${\times}$$10^{-7}$(J/$m^2$)의 자기 탄성계수를 보였으며, 보자력은 급격히 증가하는 것을 확인하였다. 나노 두께의 퍼말로이는 계면효과에 의해서 벌크특성과 다른 자기탄성계수, 보자력, Ms의 변화가 발생하였다. 따라서 나노급 소자를 제작할 때 이러한 변화를 고려하여 설계하여야 하였다.

• 청정기술
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• 제16권1호
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• pp.19-25
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• 2010

결정성의 셀룰로우스를 수소분위기하에서 다양한 귀금속 촉매를 이용하여 폴리올로 전환시키는 연구를 수행하였다. 촉매는 단일 귀금속(Pt, Ru, Ir, Rh, Pd)을 활성탄에 습식함침법으로 담지시켜서 제조하였으며, Pt/$\gamma-Al_2O_3$와 Pt/H-mordenite를 비교촉매로 사용하였다. 생성물은 고압액체크로마토그래피로 분석하였다. 촉매는 질소흡착, X-선 회절법, 유도결합플라즈마분광법(ICP-AES), 수소-승원환원분석($H_2$-TPR), 그리고 일산화탄소 화학흡착을 통하여 분석하였다. 셀룰로우스의 전환율은 사용한 촉매와 연관관계가 낮은 것으로 나타났으며 활성탄에 담지된 귀금속 촉매중에서 Pt/AC가 높은 폴리올의 수득률에 바람직한 것으로 조사되었다.

• 한국환경보건학회지
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• 제43권3호
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• pp.194-201
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• 2017

Objectives: Zinc oxide nanoparticles (ZnO NPs) are widely used in various commercial products, but they are exposed to the environment and can induce toxicity. In this study, we investigated the environmental fate and bioaccumulation of ZnO NPs in a microcosm. Methods: The microcosm was composed of water, soil (Lufa Soil 2.2) and organisms (Oryzias latipes, Neocaridina denticulata, Semisulcospira libertina). Point five and 5 mg/L of ZnO NPs were exposed in the microcosm for 14 days. Total Zn concentrations were measured using an Inductively Coupled Plasma Mass Spectrometer (ICP-MS) and intracellular NPs were observed using Transmission Electron Microscopy (TEM). Results: In the initial stages of exposure, the Zn concentrations in water increased in all exposure groups and then decreased, while the Zn concentration in soil increased after three hours for the 5 mg/L solution. Zn concentrations also showed increasing trends in N. denticulata and S. libertina at 0.5 and 5 mg/L, and in O. latipes at 5 mg/L. Accumulation of NPs was found in the livers of O. latipes and hepatopancreas of N. denticulata and S. libertina. Conclusions: In the early stages of exposure, ZnO NPs remained in the water, and then were transported to the soil and test species. Unlike other species, total Zn concentrations in N. denticulata and S. libertina increased for both 0.5 mg/L and 5 mg/L. Therefore, ZnO NPs were more easily accumulated in zoobenthos than in fish.

• Korean Chemical Engineering Research
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• 제50권3호
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• pp.435-441
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• 2012

셀룰로우스를 폴리올로 전환하기 위해 수소의 존재하에서 다양한 제올라이트에 담지된 백금촉매를 비교 연구하였다. 사용한 제올라이트로는 mordenite, Y, ferrierite, 그리고 ${\beta}$이며 비교를 위하여 ${\gamma}-Al_2O_3$, $SiO_2-Al_2O_3$, 그리고 $SiO_2$에 담지한 백금촉매도 사용하였다. 촉매의 물리적 특성은 등온 질소흡착실험을 통하여 분석하였으며 표면 산점의 특성은 암모니아 승온탈착분석법으로 파악하였고 백금의 담지량은 유도결합플라즈마분광법을 사용하여 확인하였으며 백금의 분산도는 일산화탄소의 화학흡착과 투과전자현미경 사진을 통하여 결정하였다. 셀룰로우스의 전환율은 주로 반응온도나 반응시간에 영향을 받는 것으로 나타났는데, 이는 고온의 물에서 발생하는 가역적인 수소이온 때문이다. 사용한 촉매중에서 폴리올의 수득률은 Pt/H-modenite(20)을 사용하였을 때에 가장 높게 나타났으며, Pt/Na-zeolite의 경우 Pt/H-zeolite에 비하여 활성이 낮은 것을 확인할 수 있었다. 폴리올의 수득률은 표면산점의 농도와 관련이 있음을 확인할 수 있었으며, 외부표면적 또한 폴리올의 수득에 영향을 주는 것을 확인할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.79-79
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• 1999

The varous techniques for fabrication of si or metal tip as a field emission electron source have been reported due to great potential capabilities of flat panel display application. In this report, 240nm thermal oxide was initially grown at the p-type (100) (5-25 ohm-cm) 4 inch Si wafer and 310nm Si3N4 thin layer was deposited using low pressure chemical vapor deposition technique(LPCVD). The 2 micron size dot array was photolithographically patterned. The KOH anisotropic etching of the silicon substrate was utilized to provide V-groove formation. After formation of the V-groove shape, dry oxidation at 100$0^{\circ}C$ for 600 minutes was followed. In this procedure, the orientation dependent oxide growth was performed to have a etch-mask for dry etching. The thicknesses of the grown oxides on the (111) surface and on the (100) etch stop surface were found to be ~330nm and ~90nm, respectively. The reactive ion etching by 100 watt, 9 mtorr, 40 sccm Cl2 feed gas using inductively coupled plasma (ICP) system was performed in order to etch ~90nm SiO layer on the bottom of the etch stop and to etch the Si layer on the bottom. The 300 watt RF power was connected to the substrate in order to supply ~(-500)eV. The negative ion energy would enhance the directional anisotropic etching of the Cl2 RIE. After etching, remaining thickness of the oxide on the (111) was measured to be ~130nm by scanning electron microscopy.

• Korean Chemical Engineering Research
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• 제53권3호
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• pp.372-381
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• 2015

본 연구에서는 $Ni/Al_2O_3$ 촉매를 사용한 에틸렌글리콜의 수증기 개질반응에서 제조 방법에 따른 영향을 알아보았다. 촉매들은 건식 함침법, 습식 함침법 그리고 공침법을 사용하여 제조하였다. 공침법을 사용하여 촉매 제조시 침전제를 KOH, $K_2CO_3$, $NH_4OH$를 각각 사용하여 침전제에 따른 영향 또한 알아보았다. 제조한 촉매들은 질소 물리흡착, 유도결합 플라즈마 질량분석법(ICP-AES), X선 회절법(XRD), 수소 승온 환원법(TPR), 수소 화학흡착, 승온 산화법(TPO), 주사전자현미경(SEM), 열분석법(TGA)을 사용하여 촉매의 물리화학적인 특성을 분석하였다. 773 K에서 환원한 촉매의 경우 KOH 혹은 $K_2CO_3$를 침전제로 사용하여 공침법으로 제조한 촉매가 가장 높은 활성을 보였다. 촉매 제조 방법은 Ni의 입자크기, Ni 산화물의 환원도, 반응에서의 활성과 안정성, 반응 중 탄소 침적의 형태 등에 영향을 끼치는 것을 확인할 수 있었다. KOH를 침전제로 사용하여 공침법으로 제조한 촉매의 경우 환원온도를 773~1173 K까지 증가시켰을 때, Ni 입자크기의 증가에도 불구하고 Ni 산화물의 환원도가 증가하므로 반응활성이 증가하는 것으로 나타났다.

• 상하수도학회지
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• 제21권5호
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• pp.559-569
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• 2007

The purposes of this study were to find the main foulant of membrane and the optimal chemical cleaning method for MF(microfiltration) drinking water treatment system using D dam water as water source. The MF pilot plant which can treat maximum $500m^3/d$ consisted of 3 racks and was operated for 10 months under various operation conditions. After 10 months operation, $1^{st}$ and $2^{nd}$ rack of membrane pilot plant system were cleaned chemically and the degree of the restoration of the fouled membrane in terms of the pure water flux was detemnined. Inorganic compounds which contained in chemical cleaning waste was analyzed by Inductively Coupled Plasma (ICP). One membrane module for 3rd rack was disjointed and membrane fouling materials, especially inorganic compounds were investigated by Electron Probe Microanlysis (EPMA) to elucidate the reason of TMP increase. And also, the various chemical reagents (1N HCl or $H_2SO_4$, oxalic acid as acid and 0.3% NaOCl as alkali) were tested by combination of acid and alkali to determine the optimal chemical cleaning method for the MF system using micro-modules manufactured using the disjointed module. It was verified that the inside and outside of membrane module was colorized with black. As a result of the quantitative and semi-qualitative analysis of membrane foulant by ICP, most of inorganic foulant was manganese which is hard to remove by inorganic acid such as HCI. Especially, it was observed by EPMA that Mn was attached more seriously in inside surface of membrane than in outside surface of that. It was supposed that Mn fouling in inside surface of membrane might be caused by the oxidation of soluble manganese (Mn(II)) to insoluble manganese ($MnO_2$) by chlorine containing in backwashing water. The optimal cleaning method for the removal of manganese fouling was consecutive cleaning with the mixture of 1N HCl and 1% of oxalic acid, 0.3% NaOCl, and 1N HCl showing 91% of the restoration of the fouled membrane.

• 대한화장품학회지
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• 제40권2호
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• pp.203-214
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• 2014

시중에 유통 중인 산화형 염모제 28건을 대상으로 접촉성피부염 유발 성분 함량 조사를 수행하여, 관련분야에 기초자료를 제공하고자 본 연구를 수행하였다. 접촉성피부염을 유발하는 물질로 산화염료 10종(p-phenylenediamine, toluene-2,5-diamine, m-phenylenediamine, nitro-p-phenylenediamine, p-aminophenol, m-aminophenol, o-aminophenol, p-methylaminophenol, N,N'-bis(2-hydroxyethyl)-p-phenylenediamine sulfate, 2-methyl-5-hydroxyethylaminophenol)과 중금속 4종(니켈; Ni, 크롬; Cr, 코발트; Co, 구리; Cu)을 선정하였다. 10종의 접촉성피부염 유발 산화염료의 함량조사를 위하여 헥산-2% 아황산나트륨을 이용하여 빠르고 간단하게 시료전처리를 하였고, 초고성능액체크로마토그래피를 이용하여 분석시간이 12 min으로 짧은 동시분석조건을 확립하였다. 분석 결과 10종의 산화염료 성분은 제품에 표기된 성분이 모두 확인되었고, 각 성분의 농도는 의약품등 표준제조규정에 제시된 사용할 수 있는 농도상한 이하로 나타났다(식품의약품안전처 고시 제2013-228호). 또한, 4종의 중금속성분을 확인하기 위하여 microwave를 이용하여 시료를 분해하였고, 유도결합플라즈마분광계를 이용하여 정량 분석하였다. 각 제품에서 중금속별 검출량은 Ni 0.572 ${\mu}g/g$, Cr 3.161 ${\mu}g/g$, Co 2.029 ${\mu}g/g$, Cu 0.420 ${\mu}g/g$이었다. 염모제의 성상별 중금속 농도를 비교한 결과 분말타입(헤나) 염모제의 평균 중금속 농도는 Ni 1.800 ${\mu}g/g$, Cr 10.127 ${\mu}g/g$, Co 7.082 ${\mu}g/g$, Cu 1.451 ${\mu}g/g$로 거품타입이나 크림타입 보다 높았다. 염모제를 흑색, 흑갈색, 갈색, 짙은 갈색, 옅은 갈색, 붉은 갈색의 6개 색상으로 구분하여 분석한 결과, 갈색의 경우 Co 농도가 가장 높고 나머지 색상에서는 모두 Cr의 농도가 높은 것을 알 수 있었다.