• Title/Summary/Keyword: inductively free

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FREE ARRANGEMENTS AND NICE PARTITIONS

  • Choi, Hyun-Hee;Lee, Ki-Suk
    • Communications of the Korean Mathematical Society
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    • v.17 no.3
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    • pp.439-449
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    • 2002
  • If an arrangement admits a nice partition, or an arrangement is free, then the characteristic polynomial of the arrangement can be factored. It is known that a free arrangement does not always admit a nice partition. We show that even an inductively free arrangement does not always admit a nice partition.

A study on the current limiting characteristics and magnetic analysis of the non-inductively wound coil (타입에 따른 무유도 권선형 코일의 한류 특성연구 및 자장해석)

  • Jang, Jae-Young;Park, Dong-Keun;Chang, Ki-Sung;Na, Jin-Bae;Kim, Won-Cheol;Chung, Yood-Do;Ko, Tae-Kuk
    • Progress in Superconductivity and Cryogenics
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    • v.11 no.1
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    • pp.25-29
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    • 2009
  • To reduce the power loss in normal state, non-inductively wound high temperature superconducting (HTS) coils are used for fault current limiter (FCL) application. Non-inductively wound coils can be classified into two types: solenoid type and pancake type. These two types have different electrical and thermal and mechanical characteristics due to their winding structure difference. This paper deals with the current limiting characteristics, magnetic field analysis of the two coils. Simulation using finite element method (FEM) was used to analyze the magnetic field distribution and inductance of the coils. Short circuit test using stabilizer-free coated conductor (CC) was also carried out. We can compare the characteristics of the two types of coil by using the data obtained from simulation and short circuit test. We confirmed the feasibility of FCL application by the analysis about the characteristics of non-inductively wound coil using CC.

Electrical Properties of Plasma According to Gas Pressure and RF Power of Xe-Inductively Coupled Plasma (유도결합형 제논의 가스압력 및 RF전력에 따른 플라즈마의 전기적 특성)

  • Choi, Yong-Sung;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.12a
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    • pp.43-47
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    • 2006
  • In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma (ICP). As results at several dependences of 20~100mTorr Xenon pressure, the brightness of discharge tube was higher (4,900 $cd/m^2$) than other conditions when Xe pressure was 20mTorr and RF power was 200W. In that case, the electron temperature and density were 3.58eV and $3.56{\times}10^{12}cm^2$, respectively. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

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A study on platinum dry etching using a cryogenic magnetized inductively coupled plasma (극저온 자화 유도 결합 플라즈마를 이용한 Platinum 식각에 관한 연구)

  • 김진성;김정훈;김윤택;황기웅;주정훈;김진웅
    • Journal of the Korean Vacuum Society
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    • v.8 no.4A
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    • pp.476-481
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    • 1999
  • Characteristics of platinum dry etching were investigated in a cryogenic magnetized inductively coupled plasma (MICP). The problem with platinum etching is the redeposition of sputtered platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned platinum structure produces feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape [1]. The main object of this study was to investigate a new process technology for fence-free Pt etching As bias voltage increased, the height of fence was reduced. In cryogenic etching, the height of fence was reduced to 20% at-$190^{\circ}C$ compared with that of room temperature, however the etch profile was not still fence-free. In Ar/$SF_6$ Plasma, fence-free Pt etching was possible. As the ratio of $SF_6$ gas flow is more than 14% of total gas flow, the etch profile had no fence. Chemical reaction seemed to take place in the etch process.

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Properties of Electron Temperature and Density in Inductively Coupled Plasma of Xenon (유도결합형 제논 플라즈마의 전자온도, 밀도 특성)

  • Her, In-Sung;Yang, Jong-Kyung;Lee, Jong-Chan;Park, Dae-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05b
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    • pp.41-45
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    • 2005
  • In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma(ICP). In results at several dependences of 20~100 mTorr Xenon pressure, 50~200W RF power and horizontal distribution were especially mentioned. When Xe pressure was 20mTorr and RF power was 200W, the electron temperature and density were respectively 3.58eV and $3.56{\times}10^{12}cm^{-3}$. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

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A Study on the Determination of Rare Earth Elements by Inductively Coupled Plasma Spectrometry (Inductively Coupled Plasma 법을 이용한 희토류원소의 분석에 관한 연구)

  • Beom Suk Choi;Sun Tae Kim;Young Man Kim;Chong Wook Lee
    • Journal of the Korean Chemical Society
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    • v.29 no.4
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    • pp.382-389
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    • 1985
  • The effect of plasma operational parameters for the determination of rare earth elements(REE) by means of inductively coupled plasma(ICP) spectrometry was investigated. While the increase in the flow rate of carrier gas argon enhanced the sensitivity and lowered the detection limit, significant ionization interferences were observed. The decrease in RF power increased the signal to background ratio. The observation point showing the lowest ionization interference was slightly higher than the position where the spatial profile of the analyte reached the maximum. The detection limits of the spectral lines commonly used for the determination of REE were measured and the spectral lines relatively free from spectral interferences were chosen.

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Electronic Temperature and Density of Mixed Gases in Inductively Coupled Plasma Lighting System (Ne:Xe) (Inductively Coupled Plasma 광원 시스템의 Ne:Xe 혼합가스의 전자온도 및 전자밀도 특성)

  • Choi, Yong-Sung;Gu, Hal-Bon;Lee, Jin;Lim, Jong-Yeol;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.12a
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    • pp.91-95
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    • 2006
  • In whole world consciousness of environment maintenance have increased very quickly for the end of the 20th century. To use and disuse toxic substances have been controled at the field of industry. Also the field of lighting source belong to environmental control. And in the future the control will be strong. In radiational mechanism of fluorescence lamp mercury is the worst environmental problem. In radiational mechanism of fluorescence lamp mercury is the worst environmental problem root. In the mercury free lighting source system the Xe gas lamp is one type. And the Ne:Xe mixing gas lamp improvements firing voltage of Xe gas lamp. Purpose and subject of this study are understand, efficiency, ideal of Ne:Xe plasma which mercury free lamp. Before ICP was designed, basic parameters of plasma, which are electron temperature and electron density, were measured and calculated by langmuir probe data. Property of electron temperature and electron density were confirmed by changing ratio of Ne:Xe.

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Influence of Inductively Coupled Oxygen Plasma on the Surface of Poly(ether sulfone)

  • Lee, Do Kyung;Sohn, Young-Soo
    • Journal of Sensor Science and Technology
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    • v.31 no.4
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    • pp.214-217
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    • 2022
  • The effect of inductively coupled plasma (ICP) treatment with O2 gas on the surface properties of poly(ether sulfone) (PES) was investigated. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical characteristics of the O2 plasma-treated PES films. The surface roughness of the pristine and O2 plasma-treated PES films for different RF powers of the ICP was determined using an atomic force microscope (AFM). The contact angles of the PES films were also measured, using which the surface free energies were calculated. The O1s XPS spectra of the PES films revealed that the number of polar functional groups increased following the O2 plasma treatment. The AFM analysis showed the average surface roughness increased from 1.01 to 4.48 nm as the RF power of the ICP was increased. The contact angle measurements revealed that the PES films became more hydrophilic as the RF power of the ICP was increased. The total surface energy increased with the RF power of the ICP, resulting from the increased polar energy component.

Characteristics of Ag Etching using Inductively Coupled Halogen-based Plasmas

  • Park, Sang-Duk;Lee, Young-Joon;Kim, Sang-Gab;Choe, Hee-Hwan;Hong, Moon-Poe;Yeom, Geun-Young
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.860-863
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    • 2002
  • In this study, Ag thin films deposited on LCD-grade glass were etched using inductively coupled fluorine-based plasmas and the effect of various $CF_4$-based gas mixtures on the Ag etching characteristics were studied. When $CF_4$-based gas mixtures were used with $N_2$, due to the very low vapor pressure of etch products, etch products remained on the substrate after the etching. However, when $CF_4$ used with Ar, residue-free Ag etching could be obtained due to the removal of etch product by sputtering by $Ar^+$ ions.

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Diagnostics of Inductively Coupled $BCl_3/Ar$ Plasma Characteristics Using Quadrupole Mass Spectrometer (사중극자 질량 분석기를 이용한 $BCl_3/Ar$ 유도결합 플라즈마 특성 진단)

  • Kim, Gwan-Ha;Kim, Chang-Il
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.4
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    • pp.204-208
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    • 2006
  • In this study, we investigated the ion energy distributions in a chlorine based inductively coupled plasma by quadrupole mass spectrometer with an electrostatic ion energy analyzer. Ion energy distributions are presented for various plasma parameters such as $BCl_3/Ar$ gas mixing ratio, RF power, and process pressure. As the $BCl_3/Ar$ gas mixing ratio and process pressure decreases, and RF power increases, the saddle-shaped structures is enhanced. The reason is that there are ionized energy difference between $BCl_3$ and Ar, change of plasma potential, alteration of mean free path. and variety of ion collision in the sheath.